NGTD13R120F2WP D

NGTD13R120F2
Fast Switching Rectifier Die
Fast switching low Vf rectifier die for free−wheeling applications.
Features
• Fast Switching
• Low Vf
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Typical Applications
• Industrial Motor Control
• Solar PV Inverters
VRRM = 1200 V
IF = Limited by TJ(max)
MAXIMUM RATINGS
Symbol
Value
Unit
VRRM
1200
V
Max Forward Conduction Current
IF
(Note 1)
A
Maximum Junction Temperature
TJ
175
°C
Parameter
Peak Reverse Voltage
DIODE DIE
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Depending on thermal properties of assembly.
MECHANICAL DATA
Parameter
Die Size
Value
Unit
4009 x 3009
mm2
5.5
mils
150
mm
3316 x 2321
mm2
Die Thickness
Wafer Size
Top Pad Size (Anode)
DIE OUTLINE
4 mm AlSi
Top Metal (Anode)
2 mm TiNiAg
Back Metal (Cathode)
Max possible chips per wafer
1000
Passivation frontside
Oxide−Nitride
Reject ink dot size
25 mils
Recommended storage environment:
In original container, in dry nitrogen,
or temperature of 18−28°C,
30−65%RH
Type: Bare
Wafer in Jar
Storage time:
< 36 months
Type: Die on
tape in
ring−pack
Storage time:
< 3 months
ORDERING INFORMATION
Inking?
Shipping
NGTD13R120F2WP
Device
Yes
Bare Wafer in Jar
NGTD13R120F2SWK
Yes
Sawn Wafer on Tape
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 0
1
Publication Order Number:
NGTD13R120F2WP/D
NGTD13R120F2
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Forward Voltage
IF = 25 A, TJ = 25°C
VF
Reverse Voltage
IR = 300 mA, TJ = 25°C
VR
1200
Reverse Current
VR = 1200 V, TJ = 25°C
IR
−1.0
Typ
Max
Units
2.1
2.6
V
STATIC CHARACTERISTICS
V
1.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DIE LAYOUT
A
A = Anode pad
All dimensions in mm
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NGTD13R120F2
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can
therefore not be specified for a bare die.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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For additional information, please contact your local
Sales Representative
NGTD13R120F2WP/D