NGTD13R120F2 Fast Switching Rectifier Die Fast switching low Vf rectifier die for free−wheeling applications. Features • Fast Switching • Low Vf www.onsemi.com Typical Applications • Industrial Motor Control • Solar PV Inverters VRRM = 1200 V IF = Limited by TJ(max) MAXIMUM RATINGS Symbol Value Unit VRRM 1200 V Max Forward Conduction Current IF (Note 1) A Maximum Junction Temperature TJ 175 °C Parameter Peak Reverse Voltage DIODE DIE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Depending on thermal properties of assembly. MECHANICAL DATA Parameter Die Size Value Unit 4009 x 3009 mm2 5.5 mils 150 mm 3316 x 2321 mm2 Die Thickness Wafer Size Top Pad Size (Anode) DIE OUTLINE 4 mm AlSi Top Metal (Anode) 2 mm TiNiAg Back Metal (Cathode) Max possible chips per wafer 1000 Passivation frontside Oxide−Nitride Reject ink dot size 25 mils Recommended storage environment: In original container, in dry nitrogen, or temperature of 18−28°C, 30−65%RH Type: Bare Wafer in Jar Storage time: < 36 months Type: Die on tape in ring−pack Storage time: < 3 months ORDERING INFORMATION Inking? Shipping NGTD13R120F2WP Device Yes Bare Wafer in Jar NGTD13R120F2SWK Yes Sawn Wafer on Tape © Semiconductor Components Industries, LLC, 2016 March, 2016 − Rev. 0 1 Publication Order Number: NGTD13R120F2WP/D NGTD13R120F2 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Test Conditions Symbol Min Forward Voltage IF = 25 A, TJ = 25°C VF Reverse Voltage IR = 300 mA, TJ = 25°C VR 1200 Reverse Current VR = 1200 V, TJ = 25°C IR −1.0 Typ Max Units 2.1 2.6 V STATIC CHARACTERISTICS V 1.0 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DIE LAYOUT A A = Anode pad All dimensions in mm www.onsemi.com 2 NGTD13R120F2 Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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