NGTD30T120F2WP D

NGTD30T120F2
IGBT Die
Trench Field Stop II IGBT Die for motor drive and inverter
applications.
Features
• Extremely Efficient Trench with Field Stop Technology
• Low VCE(sat) Loss Reduces System Power Dissipation
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Typical Applications
•
•
•
•
Industrial Motor Drives
Solar Inverters
UPS Systems
Welding
VRCE = 1200 V
IC = Limited by TJ(max)
MAXIMUM RATINGS
IGBT DIE
Parameter
Symbol
Value
Unit
Collector−Emitter Voltage, TJ = 25°C
VCE
1200
V
IC
(Note 1)
A
IC, pulse
200
A
VGE
±20
V
TJ
−55 to +175
°C
TSC
10
ms
DC Collector Current, limited by
TJ(max)
Pulsed Collector Current (Note 2)
Gate−Emitter Voltage
Maximum Junction Temperature
Short Circuit Withstand Time,
VGE = 15 V, VCE = 500V, TJ ≤ 150°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Depending on thermal properties of assembly.
2. Tpulse limited by Tjmax, 10 ms pulse, VGE = 15 V.
C
G
E
DIE OUTLINE
MECHANICAL DATA
Parameter
Value
Unit
6241 x 4741
mm2
See die layout
mm2
Gate Pad Size
410 x 680
mm2
Die Thickness
5
mils
Die Size
Emitter Pad Size
Wafer Size
150
mm
5 mm AlSi
Top Metal
2 mm TiNiAg
Back Metal
Max possible chips per wafer
415
Passivation frontside
Oxide−Nitride
Reject ink dot size
25 mils
Recommended storage environment:
In original container, in dry nitrogen,
or temperature of 18−28°C,
30−65%RH
Type: Bare
Wafer in Jar
Storage time:
< 36 months
Type: Die on
tape in
ring−pack
Storage time:
< 3 months
ORDERING INFORMATION
Device
Inking?
Shipping
NGTD30T120F2WP
Yes
Bare Wafer in Jar
NGTD30T120F2SWK
Yes
Sawn Wafer on Tape
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 0
1
Publication Order Number:
NGTD30T120F2WP/D
NGTD30T120F2
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Collector−Emitter Breakdown Voltage
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
Collector−Emitter Saturation Voltage
VGE = 15 V, IC = 40 A
VCE(sat)
Gate−Emitter Threshold Voltage
VGE = VCE, IC = 400 mA
VGE(TH)
Collector−Emitter Cutoff Current
VGE = 0 V, VCE = 1200 V
VGE = 20 V, VCE = 0 V
Typ
Max
Units
STATIC CHARACTERISTICS
Gate Leakage Current
V
2.0
2.4
V
5.5
6.5
V
ICES
0.4
mA
IGES
200
nA
4.5
DYNAMIC CHARACTERISTICS
Input Capacitance
VCE = 20 V, VGE = 0 V, f = 1
MHz
Output Capacitance
Reverse Transfer Capacitance
Cies
7385
pF
Coes
230
pF
Cres
140
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DIE LAYOUT
E
G
E
E = Emitter pad
G = Gate pad
All dimensions in mm
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2
NGTD30T120F2
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can
therefore not be specified for a bare die.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
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NGTD30T120F2WP/D