NGTD13T120F2 IGBT Die Trench Field Stop II IGBT Die for motor drive and inverter applications. Features • Extremely Efficient Trench with Field Stop Technology • Low VCE(sat) Loss Reduces System Power Dissipation www.onsemi.com Typical Applications • • • • Industrial Motor Drives Solar Inverters UPS Systems Welding VRCE = 1200 V IC = Limited by TJ(max) MAXIMUM RATINGS IGBT DIE Parameter Symbol Value Unit Collector−Emitter Voltage, TJ = 25°C VCE 1200 V IC (Note 1) A IC, pulse 60 A VGE ±20 V TJ −55 to +175 °C TSC 10 ms DC Collector Current, limited by TJ(max) Pulsed Collector Current (Note 2) Gate−Emitter Voltage Maximum Junction Temperature Short Circuit Withstand Time, VGE = 15 V, VCE = 500V, TJ ≤ 150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Depending on thermal properties of assembly. 2. Tpulse limited by Tjmax, 10 ms pulse, VGE = 15 V. C G E DIE OUTLINE MECHANICAL DATA Parameter Value Unit 3476 x 3580 mm2 See die layout mm2 Gate Pad Size 405 x 670 mm2 Die Thickness 5 mils Die Size Emitter Pad Size Wafer Size 150 mm 5 mm AlSi Top Metal 2 mm TiNiAg Back Metal Max possible chips per wafer 766 Passivation frontside Oxide−Nitride Reject ink dot size 25 mils Recommended storage environment: In original container, in dry nitrogen, or temperature of 18−28°C, 30−65%RH Type: Bare Wafer in Jar Storage time: < 36 months Type: Die on tape in ring−pack Storage time: < 3 months ORDERING INFORMATION Device Inking? Shipping NGTD13T120F2WP Yes Bare Wafer in Jar NGTD13T120F2SWK Yes Sawn Wafer on Tape © Semiconductor Components Industries, LLC, 2016 March, 2016 − Rev. 0 1 Publication Order Number: NGTD13T120F2WP/D NGTD13T120F2 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Test Conditions Symbol Min Collector−Emitter Breakdown Voltage VGE = 0 V, IC = 500 mA V(BR)CES 1200 Collector−Emitter Saturation Voltage VGE = 15 V, IC = 15 A VCE(sat) Gate−Emitter Threshold Voltage VGE = VCE, IC = 400 mA VGE(TH) Collector−Emitter Cutoff Current VGE = 0 V, VCE = 1200 V VGE = 20 V, VCE = 0 V Typ Max Units STATIC CHARACTERISTICS Gate Leakage Current V 2.0 2.4 V 5.5 6.5 V ICES 1.0 mA IGES 200 mA 4.5 DYNAMIC CHARACTERISTICS Input Capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Output Capacitance Reverse Transfer Capacitance Cies 2640 pF Coes 88 pF Cres 50 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DIE LAYOUT E G E E = Emitter pad G = Gate pad All dimensions in mm www.onsemi.com 2 NGTD13T120F2 Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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