NGB8245N D

NGB8245N
Ignition IGBT
20 A, 450 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
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20 A, 450 V
VCE(on) 3 1.24 V @
IC = 15 A, VGE . 4.0 V
Features
•
•
•
•
•
•
•
•
Ideal for Coil−on−Plug and Driver−on−Coil Applications
D2PAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
This is a Pb−Free Device
C
RG
G
RGE
E
Applications
• Ignition Systems
MARKING DIAGRAM
4 Collector
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
500
V
Collector−Gate Voltage
VCER
500
V
Gate−Emitter Voltage
VGE
"15
V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
20
50
ADC
AAC
Continuous Gate Current
IG
1.0
mA
Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz)
IG
20
mA
2.0
kV
8.0
kV
ESD (Charged−Device Model)
ESD
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
PD
150
1.0
W
W/°C
TJ, Tstg
−55 to +175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating & Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 2
1
NGB
8245NG
AYWW
1
D2PAK
CASE 418B
STYLE 4
1
Gate
3
Emitter
2
Collector
NGB8245N = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGB8245NT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8245N/D
NGB8245N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 9.5 A, RG = 1 kW, L = 3.5 mH, Starting TC = 150°C
EAS
Value
158
Unit
mJ
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJC
1.0
°C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
62.5
°C/W
TL
275
°C
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = −40°C to 175°C
430
450
470
V
IC = 10 mA
TJ = −40°C to 175°C
450
475
500
IC = 12 A, L = 3.5 mH,
RG = 1 kW (Note 4)
TJ = −40°C to 175°C
420
450
480
VCE = 15 V, VGE = 0 V
TJ = 25°C
0.002
1.0
VCE = 250 V, RG = 1 kW
TJ = −40°C to 175°C
0.5
2.0
100
TJ = 25°C
30
33
39
IC = −75 mA
TJ = 175°C
31
35
40
TJ = −40°C
30
31
37
TJ = 25°C
−
0.4
1.0
TJ = 175°C
−
20
35
TJ = −40°C
−
0.04
0.2
OFF CHARACTERISTICS (Note 3)
Collector−Emitter Clamp Voltage
Collector−Emitter Leakage Current
Reverse Collector−Emitter Clamp
Voltage
Reverse Collector−Emitter Leakage
Current
Gate−Emitter Clamp Voltage
ICES
BVCES(R)
ICES(R)
VCE = −24 V
mA
V
mA
BVGES
IG = "5.0 mA
TJ = −40°C to 175°C
12
12.5
14
V
IGES
VGE = "5.0 V
TJ = −40°C to 175°C
200
316
350
mA
Gate−Emitter Leakage Current
Gate Resistor
RG
TJ = −40°C to 175°C
70
Gate−Emitter Resistor
RGE
TJ = −40°C to 175°C
14.25
16
25
kW
VGE(th)
TJ = 25°C
1.5
1.8
2.1
V
TJ = 175°C
0.7
1.0
1.3
TJ = −40°C
1.7
2.0
2.3
4.0
4.6
5.2
mV/°C
V
W
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IC = 1.0 mA, VGE = VCE
Threshold Temperature Coefficient
(Negative)
Collector−to−Emitter On−Voltage
VCE(on)
Forward Transconductance
gfs
IC = 10 A, VGE = 3.7 V
TJ = −40°C to 175°C
0.8
1.11
1.97
IC = 10 A, VGE = 4.0 V
TJ = −40°C to 175°C
0.8
1.10
1.85
IC = 15 A, VGE = 4.0 V
TJ = −40°C to 175°C
0.8
1.24
2.00
IC = 6.0 A, VCE = 5.0 V
TJ = 25°C
10
19
25
Mhos
1100
1400
1600
pF
50
65
80
15
20
25
DYNAMIC CHARACTERISTICS (Note 3)
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
f = 10 kHz, VCE = 25 V
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2
TJ = 25°C
NGB8245N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = −40°C to 175°C
0.1
1.0
2.0
ms
TJ = −40°C to 175°C
1.0
3.4
6.0
TJ = −40°C to 175°C
2.0
4.5
8.0
TJ = −40°C to 175°C
3.0
8.0
12
TJ = −40°C to 175°C
6.5
9.7
12.5
TJ = −40°C to 175°C
6.0
8.3
11
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time (Resistive)
10% VGE to 10% IC
Rise Time (Resistive)
10% IC to 90% IC
Turn−Off Delay Time (Resistive)
90% VGE to 90% IC
Fall Time (Resistive)
90% IC to 10% IC
Turn−Off Delay Time (Inductive)
90% VGE to 90% IC
Fall Time (Inductive)
90% IC to 10% IC
td(on)R
trR
VCC = 14 V, RL = 1.0 W,
RG = 1.0 kW, VGE = 5.0 V
td(off)R
tfR
td(off)L
tfL
VCC = 14 V, RL = 1.0 W,
RG = 1.0 kW, VGE = 5.0 V
VCE = BVCES, L = 0.5mH,
RG = 1.0 kW, IC = 10 A,
VGE = 5.0 V
ms
ms
3. Electrical Characteristics at temperature other than 25°C, Dynamic and Switching characteristics are not subject to production testing.
4. Not subject to production testing.
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3
NGB8245N
TYPICAL ELECTRICAL CHARACTERISTICS
400
30
TJ = 25°C
IA, AVALANCHE CURRENT (A)
SCIS ENERGY (mJ)
350
300
250
TJ = 175°C
200
150
100
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
50
0
2
0
6
4
L = 1.8 mH
20
L = 3.0 mH
15
10
L = 10 mH
5
0
−50
10
8
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
25
−25
INDUCTOR (mH)
60
2.0
IC = 25 A
IC = 20 A
1.5
IC = 15 A
1.25
IC = 10 A
1.0
IC = 7.5 A
0.75
0.5
0.25
VGE = 4.5 V
0.0
−50
−25
0
25
50
75
100
125
150
50
75
100
125
150 175
4V
TJ = 175°C
40
3.5 V
30
3V
20
2.5 V
10
0
175
4.5 V
5V
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
60
60
VGE = 10 V
50
4.5 V
4V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
50
VGE = 10 V
TJ, JUNCTION TEMPERATURE (°C)
5V
40
TJ = 25°C
3.5 V
30
20
3V
10
0
25
Figure 2. Open Secondary Avalanche Current
vs. Temperature
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. Self Clamped Inductive Switching
1.75
0
TJ, JUNCTION TEMPERATURE (°C)
2.5 V
0
1
2
3
4
5
6
7
VGE = 10 V
4V
5V
40
TJ = −40°C
3.5 V
30
20
3V
10
0
8
4.5 V
50
2.5 V
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1
2
3
4
5
6
7
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
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4
8
NGB8245N
TYPICAL ELECTRICAL CHARACTERISTICS
10000
COLLECTOR TO EMITTER LEAKAGE
CURRENT (mA)
IC, COLLECTOR CURRENT (A)
45
VCE = 5 V
40
1000
35
30
25
20
TJ = 25°C
15
10
TJ = 175°C
5
0
0
1
0.5
1.5
TJ = −40°C
2
2.5
3
3.5
4
10
VCE = 200 V
1.0
0.1
−50
−25
0
25
75
50
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
2.25
Mean
Mean + 4 s
2.00
1.75
C, CAPACITANCE (pF)
GATE THRESHOLD VOLTAGE (V)
100
VGE, GATE TO EMITTER VOLTAGE (V)
2.50
Mean − 4 s
1.50
1.25
1.00
0.75
0.50
Ciss
1000
Coss
100
Crss
10
1.0
0.25
0
−50
−25
0
25
50
75
100
125
150
0.1
175
5
10
15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
25
12
10
10
SWITCHING TIME (ms)
tfall
8
tdelay
6
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
RL = 33 W
4
2
0
25
0
TJ, JUNCTION TEMPERATURE (°C)
12
SWITCHING TIME (ms)
VCE = −24 V
50
75
100
125
150
8
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
L = 300 mH
tdelay
6
tfall
4
2
0
25
175
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
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5
175
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
NGB8245N
100
Duty Cycle = 0.5
0.2
10
0.1
1
0.02
0.05
0.01
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
t1
t2
Single Pulse
0.01
0.000001
DUTY CYCLE, D = t1/t2
0.00001
0.0001
0.001
0.1
0.01
TJ(pk) − TA = P(pk) RqJA(t)
For D=1: RqJC X R(t) for t ≤ 0.1 s
1
10
100
1000
t,TIME (S)
RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
Figure 13. Minimum Pad Transient Thermal Resistance
(Non−normalized Junction−to−Ambient)
1
Duty Cycle = 0.5
0.2
0.1
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
0.05
t1
0.02
t2
0.01
0.01
0.000001
TJ(pk) − TA = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
0.0001
0.001
0.01
t,TIME (S)
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
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6
0.1
1
NGB8245N
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
J
G
D
W
H
3 PL
0.13 (0.005)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
M
T B
M
P
U
SOLDERING FOOTPRINT*
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
8.38
0.33
F
VIEW W−W
1.016
0.04
10.66
0.42
17.02
0.67
5.08
0.20
3.05
0.12
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NGB8245N/D