NGB8245N Ignition IGBT 20 A, 450 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. http://onsemi.com 20 A, 450 V VCE(on) 3 1.24 V @ IC = 15 A, VGE . 4.0 V Features • • • • • • • • Ideal for Coil−on−Plug and Driver−on−Coil Applications D2PAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability This is a Pb−Free Device C RG G RGE E Applications • Ignition Systems MARKING DIAGRAM 4 Collector MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 500 V Collector−Gate Voltage VCER 500 V Gate−Emitter Voltage VGE "15 V Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50 ADC AAC Continuous Gate Current IG 1.0 mA Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 20 mA 2.0 kV 8.0 kV ESD (Charged−Device Model) ESD ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V PD 150 1.0 W W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 2 1 NGB 8245NG AYWW 1 D2PAK CASE 418B STYLE 4 1 Gate 3 Emitter 2 Collector NGB8245N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NGB8245NT4G D2PAK (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NGB8245N/D NGB8245N UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 9.5 A, RG = 1 kW, L = 3.5 mH, Starting TC = 150°C EAS Value 158 Unit mJ THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 62.5 °C/W TL 275 °C Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 175°C 430 450 470 V IC = 10 mA TJ = −40°C to 175°C 450 475 500 IC = 12 A, L = 3.5 mH, RG = 1 kW (Note 4) TJ = −40°C to 175°C 420 450 480 VCE = 15 V, VGE = 0 V TJ = 25°C 0.002 1.0 VCE = 250 V, RG = 1 kW TJ = −40°C to 175°C 0.5 2.0 100 TJ = 25°C 30 33 39 IC = −75 mA TJ = 175°C 31 35 40 TJ = −40°C 30 31 37 TJ = 25°C − 0.4 1.0 TJ = 175°C − 20 35 TJ = −40°C − 0.04 0.2 OFF CHARACTERISTICS (Note 3) Collector−Emitter Clamp Voltage Collector−Emitter Leakage Current Reverse Collector−Emitter Clamp Voltage Reverse Collector−Emitter Leakage Current Gate−Emitter Clamp Voltage ICES BVCES(R) ICES(R) VCE = −24 V mA V mA BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V IGES VGE = "5.0 V TJ = −40°C to 175°C 200 316 350 mA Gate−Emitter Leakage Current Gate Resistor RG TJ = −40°C to 175°C 70 Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 16 25 kW VGE(th) TJ = 25°C 1.5 1.8 2.1 V TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3 4.0 4.6 5.2 mV/°C V W ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) Collector−to−Emitter On−Voltage VCE(on) Forward Transconductance gfs IC = 10 A, VGE = 3.7 V TJ = −40°C to 175°C 0.8 1.11 1.97 IC = 10 A, VGE = 4.0 V TJ = −40°C to 175°C 0.8 1.10 1.85 IC = 15 A, VGE = 4.0 V TJ = −40°C to 175°C 0.8 1.24 2.00 IC = 6.0 A, VCE = 5.0 V TJ = 25°C 10 19 25 Mhos 1100 1400 1600 pF 50 65 80 15 20 25 DYNAMIC CHARACTERISTICS (Note 3) Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS f = 10 kHz, VCE = 25 V http://onsemi.com 2 TJ = 25°C NGB8245N ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = −40°C to 175°C 0.1 1.0 2.0 ms TJ = −40°C to 175°C 1.0 3.4 6.0 TJ = −40°C to 175°C 2.0 4.5 8.0 TJ = −40°C to 175°C 3.0 8.0 12 TJ = −40°C to 175°C 6.5 9.7 12.5 TJ = −40°C to 175°C 6.0 8.3 11 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time (Resistive) 10% VGE to 10% IC Rise Time (Resistive) 10% IC to 90% IC Turn−Off Delay Time (Resistive) 90% VGE to 90% IC Fall Time (Resistive) 90% IC to 10% IC Turn−Off Delay Time (Inductive) 90% VGE to 90% IC Fall Time (Inductive) 90% IC to 10% IC td(on)R trR VCC = 14 V, RL = 1.0 W, RG = 1.0 kW, VGE = 5.0 V td(off)R tfR td(off)L tfL VCC = 14 V, RL = 1.0 W, RG = 1.0 kW, VGE = 5.0 V VCE = BVCES, L = 0.5mH, RG = 1.0 kW, IC = 10 A, VGE = 5.0 V ms ms 3. Electrical Characteristics at temperature other than 25°C, Dynamic and Switching characteristics are not subject to production testing. 4. Not subject to production testing. http://onsemi.com 3 NGB8245N TYPICAL ELECTRICAL CHARACTERISTICS 400 30 TJ = 25°C IA, AVALANCHE CURRENT (A) SCIS ENERGY (mJ) 350 300 250 TJ = 175°C 200 150 100 VCC = 14 V VGE = 5.0 V RG = 1000 W 50 0 2 0 6 4 L = 1.8 mH 20 L = 3.0 mH 15 10 L = 10 mH 5 0 −50 10 8 VCC = 14 V VGE = 5.0 V RG = 1000 W 25 −25 INDUCTOR (mH) 60 2.0 IC = 25 A IC = 20 A 1.5 IC = 15 A 1.25 IC = 10 A 1.0 IC = 7.5 A 0.75 0.5 0.25 VGE = 4.5 V 0.0 −50 −25 0 25 50 75 100 125 150 50 75 100 125 150 175 4V TJ = 175°C 40 3.5 V 30 3V 20 2.5 V 10 0 175 4.5 V 5V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector−to−Emitter Voltage 60 60 VGE = 10 V 50 4.5 V 4V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 50 VGE = 10 V TJ, JUNCTION TEMPERATURE (°C) 5V 40 TJ = 25°C 3.5 V 30 20 3V 10 0 25 Figure 2. Open Secondary Avalanche Current vs. Temperature IC, COLLECTOR CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching 1.75 0 TJ, JUNCTION TEMPERATURE (°C) 2.5 V 0 1 2 3 4 5 6 7 VGE = 10 V 4V 5V 40 TJ = −40°C 3.5 V 30 20 3V 10 0 8 4.5 V 50 2.5 V 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1 2 3 4 5 6 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage http://onsemi.com 4 8 NGB8245N TYPICAL ELECTRICAL CHARACTERISTICS 10000 COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) IC, COLLECTOR CURRENT (A) 45 VCE = 5 V 40 1000 35 30 25 20 TJ = 25°C 15 10 TJ = 175°C 5 0 0 1 0.5 1.5 TJ = −40°C 2 2.5 3 3.5 4 10 VCE = 200 V 1.0 0.1 −50 −25 0 25 75 50 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 10000 2.25 Mean Mean + 4 s 2.00 1.75 C, CAPACITANCE (pF) GATE THRESHOLD VOLTAGE (V) 100 VGE, GATE TO EMITTER VOLTAGE (V) 2.50 Mean − 4 s 1.50 1.25 1.00 0.75 0.50 Ciss 1000 Coss 100 Crss 10 1.0 0.25 0 −50 −25 0 25 50 75 100 125 150 0.1 175 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage 25 12 10 10 SWITCHING TIME (ms) tfall 8 tdelay 6 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 4 2 0 25 0 TJ, JUNCTION TEMPERATURE (°C) 12 SWITCHING TIME (ms) VCE = −24 V 50 75 100 125 150 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH tdelay 6 tfall 4 2 0 25 175 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature http://onsemi.com 5 175 R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) NGB8245N 100 Duty Cycle = 0.5 0.2 10 0.1 1 0.02 0.05 0.01 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) t1 t2 Single Pulse 0.01 0.000001 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.1 0.01 TJ(pk) − TA = P(pk) RqJA(t) For D=1: RqJC X R(t) for t ≤ 0.1 s 1 10 100 1000 t,TIME (S) RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient) 1 Duty Cycle = 0.5 0.2 0.1 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) 0.05 t1 0.02 t2 0.01 0.01 0.000001 TJ(pk) − TA = P(pk) RqJC(t) DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 0.0001 0.001 0.01 t,TIME (S) Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) http://onsemi.com 6 0.1 1 NGB8245N PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K J G D W H 3 PL 0.13 (0.005) DIM A B C D E F G H J K L M N P R S V M T B M P U SOLDERING FOOTPRINT* L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 8.38 0.33 F VIEW W−W 1.016 0.04 10.66 0.42 17.02 0.67 5.08 0.20 3.05 0.12 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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