ONSEMI NGB8207N

NGB8207N
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
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20 AMPS
365 VOLTS
VCE(on) = 1.5 V Typ @
IC = 10 A, VGE . 4.5 V
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
•
•
•
•
•
•
•
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Minimum Avalanche Energy − 500 mJ
Gate Resistor (RG) = 70 W
This is a Pb−Free Device
C
RG
G
RGE
E
Applications
D2PAK
CASE 418B
STYLE 4
• Ignition Systems
1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
MARKING DIAGRAM
Collector−Emitter Voltage
VCES
365
V
Gate−Emitter Voltage
4
Collector
Rating
VGE
$15
V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
20
50
ADC
AAC
Continuous Gate Current
IG
1.0
mA
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
IG
20
mA
ESD (Charged−Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
PD
165
1.1
W
W/°C
TJ, Tstg
−55 to
+175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C (Note 1)
Operating & Storage Temperature Range
NGB
8207NG
AYWW
1
Gate
kV
8.0
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink Case−to−Ambient
3
Emitter
2
Collector
NGB8207N = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGB8207NT4G
D2PAK
800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 0
1
Publication Order Number:
NGB8207N/D
NGB8207N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 10 V, Pk IL = 16.5 A, L = 3.7 mH, Rg = 1 kW Starting TJ = 25°C
VCC = 50 V, VGE = 10 V, Pk IL = 10 A, L = 6.1 mH, Rg = 1 kW Starting TJ = 125°C
Value
Unit
EAS
mJ
500
306
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS(R)
mJ
2000
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJC
0.9
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
50
°C/W
TL
275
°C
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3)
2. When surface mounted to an FR4 board using the minimum recommended pad size.
3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = −40°C to 175°C
325
350
375
V
IC = 10 mA
TJ = −40°C to 175°C
340
365
390
VCE = 24 V
VGE = 0 V
TJ = 25°C
0.1
2.0
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
ICES
VCE = 250 V
VGE = 0 V
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
IC = −75 mA
Reverse Collector−Emitter Leakage Current
ICES(R)
VCE = −24 V
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
TJ = 25°C
−
1.0
5
TJ = 175°C
70
85
150
TJ = −40°C
−
0.25
2.5
TJ = 25°C
30
33
39
TJ = 175°C
30
36
42
TJ = −40°C
29
32
35
TJ = 25°C
0.10
0.25
0.85
TJ = 175°C
20
25
40
TJ = −40°C
−
0.03
0.3
mA
V
mA
BVGES
IG = $5.0 mA
TJ = −40°C to 175°C
12
13
14.5
V
IGES
VGE = $10 V
TJ = −40°C to 175°C
500
700
1000
mA
W
Gate Resistor
RG
TJ = −40°C to 175°C
Gate−Emitter Resistor
RGE
TJ = −40°C to 175°C
14.25
70
16
25
kW
TJ = 25°C
1.2
1.5
2.0
V
TJ = 175°C
0.6
0.8
1.2
TJ = −40°C
1.4
1.7
2.0
12
12
12
mV/°C
TJ = 25°C
1.0
1.3
1.6
V
TJ = 175°C
0.8
1.1
1.4
TJ = −40°C
1.15
1.4
1.75
TJ = 25°C
−
0.62
1.0
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA
VGE = VCE
Threshold Temperature Coefficient (Negative)
Collector−to−Emitter On−Voltage
VCE(on)
IC = 6.0 A
VGE = 4.0 V
IC = 10 mA
VGE = 4.5 V
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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2
NGB8207N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
1.1
1.5
1.7
V
TJ = 175°C
1.0
1.3
1.6
TJ = −40°C
1.2
1.5
1.85
TJ = 25°C
1.2
1.6
1.9
TJ = 175°C
1.1
1.45
1.8
TJ = −40°C
1.3
1.7
2.0
TJ = 25°C
1.1
1.5
1.85
TJ = 175°C
1.1
1.4
1.75
TJ = −40°C
1.35
1.7
2.1
TJ = 25°C
1.2
1.5
1.8
TJ = 175°C
1.1
1.4
1.7
TJ = −40°C
1.2
1.6
2.0
TJ = 25°C
1.45
1.85
2.15
TJ = 175°C
1.6
1.9
2.4
TJ = −40°C
1.5
1.9
2.25
TJ = 25°C
1.6
2.1
2.6
TJ = 175°C
2.0
2.4
3.1
TJ = −40°C
1.6
2.1
2.5
TJ = 25°C
−
15.8
−
Mhos
750
810
900
pF
75
90
105
4
7
12
TJ = 25°C
0.5
0.55
0.7
TJ = 25°C
2.0
2.32
2.7
TJ = 25°C
2.0
2.5
3.0
TJ = 25°C
8.0
10
13
TJ = 25°C
0.5
0.65
0.75
TJ = 25°C
0.7
1.8
2.0
TJ = 25°C
4.0
4.7
6.0
TJ = 25°C
6.0
10
15
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage
VCE(on)
IC = 8.0 A
VGE = 4.0 V
IC = 10 A
VGE = 3.7 V
IC = 10 A
VGE = 4.0 V
IC = 10 A
VGE = 4.5 V
IC = 15 A
VGE = 4.0 V
IC = 20 A
VGE = 4.0 V
Forward Transconductance
gfs
IC = 6.0 A
VCE = 5.0 V
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
f = 10 kHz
VCE = 25 V
TJ = 25°C
SWITCHING CHARACTERISTICS
Turn−On Delay Time (Resistive)
Low Voltage
Rise Time (Resistive)
Low Voltage
Turn−Off Delay Time (Resistive)
Low Voltage
Fall Time (Resistive)
Low Voltage
Turn−On Delay Time (Resistive)
High Voltage
Rise Time (Resistive)
High Voltage
Turn−Off Delay Time (Resistive)
High Voltage
Fall Time (Resistive)
High Voltage
td(on)
VCE = 14 V
RL = 1.0 W
VGE = 5.0 V
RG = 1000 W
tr
td(off)
VCE = 14 V
RL = 1.0 W
VGE = 5.0 V
RG = 1000 W
tf
td(on)
VCE = 300 V
RL = 46 W
VGE = 5.0 V
RG = 1000 W
tr
VCE = 300 V
RL = 46 W
VGE = 5.0 V
RG = 1000 W
td(off)
tf
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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3
mSec
NGB8207N
TYPICAL ELECTRICAL CHARACTERISTICS
50
40
70 mS 40 A
510 mJ
40
35
140 mS 25.6 A
660 mJ
30
35 mS 39.8 A
250 mJ
35
PEAK CURRENT (A)
PEAK CURRENT (A)
45
25
175 mS 21 A
675 mJ
20
15
10
30
25
140 mS 16 A
400 mJ
20
230 mS 9 A
375 mJ
15
10
5
5
0
0
0
100
50
150
250
200
0
300
50
CLAMPING TIME (mS)
2.5
2.0
VGE = 4.0 V @ TJ = −40°C
1.5
VGE = 4.0 V @ TJ = 25°C
1.0
VGE = 4.0 V @ TJ = 175°C
0
2
4
6
8
10
12
14
16
18
20
22
2.5
2.0
IC = 15 A
IC = 10 A
1.5
IC = 6.0 A
1.0
IC = 8.0 A
0.5
0
−50 −25
20
75
50
100
125
150 175
60
4.8 V
VGE = 4.5 V
10
0
VGE = 10 V
4.8 V to 6.5 V
50
4.5 V
4.2 V
VGE = 2.0 V to 4.0 V
30
25
Figure 4. Collector−to−Emitter Voltage vs.
Junction Temperature
IC, COLLECTOR CURRENT (A)
40
0
TJ, JUNCTION TEMPERATURE (°C)
VGE = 2.0 V to 4.2 V
IC, COLLECTOR CURRENT (A)
50
250
IC = 20 A
Figure 3. Collector−to−Emitter Voltage vs.
Collector Current
VGE = 10 V
5.0 V to 6.5 V
200
3.0
IC, COLLECTOR (A)
60
150
Figure 2. Typical Self Clamped Inductive
Switching Performance (SCIS) @ 1505C
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
VCE(on), COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 1. Typical Self Clamped Inductive
Switching Performance (SCIS) @ 255C
0.5
100
CLAMPING TIME (mS)
40
30
20
10
0
0
1
2
3
4
5
6
7
8
9
10
0
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
1
2
3
4
5
6
7
8
9
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 5. On−Region Characteristics
@ TJ = 255C
Figure 6. On−Region Characteristics
@ TJ = −405C
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4
10
NGB8207N
TYPICAL ELECTRICAL CHARACTERISTICS
60
60
5.5 V
IC, COLLECTOR CURRENT (A)
50
VCE ≥ 5.0 V
5.0 V
6.5 V
6.0 V
VGE = 2.2 V to 4.8 V
40
30
20
10
VGE = 2.0 V
0
0
1
3
2
4
5
6
7
8
9
LEAKAGE CURRENT (mA)
TJ = 25°C
TJ = 175°C
40
30
20
10
0
1.0
2.0
3.0
4.0
5.0
6.0
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
VGE, GATE−TO−EMITTER VOLTAGE (V)
Figure 7. On−Region Characteristics
@ TJ = 1755C
Figure 8. Transfer Characteristics
100,000
10,000
VCE = −24 V
1000
100
VCE = 320 V
10
1
−50 −25
0
25
50
75
100
150
125
175
2.0
MEAN + 4s
1.75
MEAN
1.5
MEAN − 4s
1.25
1.0
0.75
0.5
−50 −25
TJ, JUNCTION TEMPERATURE (°C)
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Collector−to−Emitter Leakage
Current vs. Temperature
Figure 10. Gate Threshold Voltage vs.
Temperature
10,000
100
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 10 A
TJ = 25°C
VGE = 0 V
1000
Ciss
t, TIME (ms)
C, CAPACITANCE (pF)
TJ = −40°C
50
10
VGE(th), GATE THRESHOLD VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
10 V
100
Coss
tf
10
td(off)
tr
1
td(on)
10
Crss
1
0.1
0
20
40
60
80
100 120 140 160 180 200
25
50
75
100
125
150
175
COLLECTOR−TO−EMITTER VOLTAGE (V)
TEMPERATURE (°C)
Figure 11. Capacitance Variation
Figure 12. Resistive Switching Time Variation
vs. Temperature
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5
NGB8207N
TYPICAL ELECTRICAL CHARACTERISTICS
VCC = 300 V IC = 10 A
VGE = 5.0 V L = 300 mH
RG = 1000 W
100
IC, COLLECTOR CURRENT (A)
t, TIME (mS)
1000
tr
100
td(on)
tf
10
td(off)
VGE = 4.0 V
Single Pulse
TC = 25°C
100 ms
25
50
75
100
125
150
dc
Mounted on 2″ sq. FR4 board (1″ sq.
2 oz. Cu 0.06″ thick single sided)
1
175
1 ms
10 ms
VCE(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
10 ms
10
10
100
1000
TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Inductive Switching Time Variation
vs. Temperature
Figure 14. Forward Biased Safe Operating
Area
1
RqJC(t), TRANSIENT THERMAL
RESISTANCE (°C/W)
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
t1
t2
0.01
0.01
0.000001
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
TJ(pk) − TA = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
0.0001
0.001
0.01
t,TIME (S)
Figure 15. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
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6
0.1
1
NGB8207N
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D
H
3 PL
0.13 (0.005)
M
T B
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
P
U
SOLDERING FOOTPRINT*
L
M
8.38
0.33
F
1.016
0.04
10.66
0.42
VIEW W−W
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NGB8207N/D