NGD8209N D

NGD8209N
Ignition IGBT 12 A, 410 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include motorbike ignition, Direct Fuel Injection, or wherever high
voltage and high current switching is required.
http://onsemi.com
12 AMPS
410 VOLTS
VCE(on) 3 2.0 V @
IC = 6.0 A, VGE . 4.0 V
Features
•
•
•
•
•
•
•
Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Low Saturation Voltage
High Pulsed Current Capability
These are Pb−Free Devices
C
RG
G
RGE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
445
VDC
Collector−Gate Voltage
VCER
445
VDC
Gate−Emitter Voltage
VGE
15
VDC
IC
12
30
ADC
AAC
Rating
Collector Current−Continuous
@ TC = 25°C − Pulsed
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
V
PD
94
0.63
Watts
W/°C
TJ, Tstg
−55 to
+175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
E
4
1 2
3
DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
kV
1
Gate
8.0
YWW
NGD
8209G
2
Collector
4
Collector
3
Emitter
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
= Year
WW = Work Week
G = Pb−Free Device
ORDERING INFORMATION
Device
Package
Shipping†
NGD8209NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 0
1
Publication Order Number:
NGD8209N/D
NGD8209N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 7.4 A, L = 10 mH, Starting TJ = 25°C
Value
EAS
Unit
mJ
274
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.6
°C/W
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
105
TL
275
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = −40°C to
150°C
380
410
435
VDC
IC = 10 mA
TJ = −40°C to
150°C
390
420
445
TJ = 25°C
−
1.0
25
TJ = 150°C
−
9.0
50
TJ = −40°C
−
0.5
15
TJ = 25°C
−
0.5
1.0
TJ = 150°C
−
10
30
TJ = −40°C
−
0.05
0.5
TJ = 25°C
26
33
38
TJ = 150°C
29
36
41
TJ = −40°C
24
32
36
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse Collector−Emitter Leakage Current
Reverse Collector−Emitter Clamp Voltage
Gate−Emitter Clamp Voltage
ICES
VCE = 350 V,
VGE = 0 V
IECS
VCE = −24 V
BVCES(R)
IC = −75 mA
μADC
mA
VDC
BVGES
IG = 5.0 mA
TJ = −40°C to
150°C
10
13
16
VDC
IGES
VGE = 10 V
TJ = −40°C to
150°C
380
635
1000
μADC
Gate Resistor
RG
−
TJ = −40°C to
150°C
−
70
−
Ω
Gate Emitter Resistor
RGE
−
TJ = −40°C to
150°C
10
16
26
kΩ
VDC
Gate−Emitter Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Threshold Temperature Coefficient
(Negative)
VGE(th)
TJ = 25°C
1.0
1.42
2.0
IC = 1.0 mA,
VGE = VCE
TJ = 150°C
0.7
0.95
1.5
TJ = −40°C
1.1
1.62
2.2
−
−
−
3.5
−
−
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
http://onsemi.com
2
mV/°C
NGD8209N
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
0.8
1.45
2.0
VDC
TJ = 150°C
0.85
1.44
1.85
TJ = −40°C
1.0
1.5
1.95
TJ = 25°C
1.1
1.79
2.3
TJ = 150°C
1.2
1.9
2.2
TJ = −40°C
1.3
1.77
2.2
TJ = −40°C to
150°C
5.0
14
30
ON CHARACTERISTICS (continued) (Note 3)
VCE(on)
Collector−to−Emitter On−Voltage
IC = 6.0 A,
VGE = 4.0 V
IC = 10 A,
VGE = 4.5 V
Forward Transconductance
gfs
VCE = 5.0 V, IC = 6.0 A
Mhos
3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
TYPICAL CHARACTERISTICS
70
5.0 V
50
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
60
TJ = 25°C
4.0 V
40
30
3.0 V
20
2.5 V
10
0
0
1
2
3
4
5
6
7
8
9
4.0 V
40
30
3.0 V
20
2.5 V
10
0
1
2
3
4
6
7
8
9
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
30
TJ = 150°C
5.0 V
40
4.0 V
30
3.0 V
20
2.5 V
10
0
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
5.0 V
TJ = −40°C
50
0
10
50
0
60
1
2
3
4
5
6
7
8
9
150°C
VCE = 10 V
25
25°C
20
15
10
5
0
10
−40°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Transfer Characteristics
http://onsemi.com
3
10
4.5 5.0
NGD8209N
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.00
IC = 10 A
1.75
IC = 8 A
1.50
IC = 5 A
1.25
IC = 3 A
1.00
0.75
0.50
0.25
VGE = 5 V
0
−50
−25
25
0
50
75
100
125
150
1.50
IC = 8 A
1.25
IC = 5 A
IC = 3 A
1.00
0.75
0.50
0.25
0
TJ = 25°C
4
5
6
7
8
9
Figure 5. Collector−to−Emitter Saturation
Voltage vs. Junction Temperature
Figure 6. Collector−to−Emitter Voltage vs.
Gate−to−Emitter Voltage
IC = 10 A
1.75
IC = 8 A
1.50
1.25
IC = 5 A
1.00
IC = 3 A
0.75
0.50
0.25
TJ = 150°C
4
IC = 10 A
1.75
VGE, GATE TO EMITTER VOLTAGE (V)
2.00
0
2.00
TJ, JUNCTION TEMPERATURE (°C)
VGE(th), GATE THRESHOLD VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
5
6
7
8
9
10
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50 −30 −10
10
30
50
70
90
110 130 150
VGE, GATE TO EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Collector−to−Emitter Voltage vs.
Gate−to−Emitter Voltage
Figure 8. Gate Threshold Voltage vs. Junction
Temperature
http://onsemi.com
4
NGD8209N
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NGD8209N/D