NGD8201B D

NGD8201B
Ignition IGBT, 20 A, 400 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
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Features
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Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Emitter Ballasting for Short−Circuit Capability
These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
430
VDC
Collector−Gate Voltage
VCER
430
VDC
Gate−Emitter Voltage
VGE
18
VDC
IC
15
50
ADC
AAC
Rating
Collector Current−Continuous
@ TC = 25°C − Pulsed
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
V
PD
115
0.77
Watts
W/°C
TJ, Tstg
−55 to
+175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
20 AMPS, 400 VOLTS
VCE(on) 3 1.8 V @
IC = 10 A, VGE . 4.5 V
C
G
RGE
E
4
1 2
3
MARKING DIAGRAM
1
Gate
2
Collector
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AYWW
NGD
8201BG
4
Collector
3
Emitter
kV
8.0
DPAK
CASE 369C
STYLE 7
NGD8201B = Device Code
A
= Assemlby Location
Y
= Year
WW
= Work Week
G
= Pb−Free Device
ORDERING INFORMATION
Device
Package
Shipping†
NGD8201BNT4G
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 4
1
Publication Order Number:
NGD8201B/D
NGD8201B
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 22 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 17 A, RG = 1000 W, L = 3.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 19 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 125°C
EAS
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
Value
Unit
mJ
435
433
325
EAS(R)
mJ
2000
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
RθJC
1.3
°C/W
RθJA
95
°C/W
TL
275
°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
IC = 2.0 mA
TJ = −40°C to
150°C
380
395
420
VDC
IC = 10 mA
TJ = −40°C to
150°C
390
405
430
TJ = 25°C
−
1.5
5
TJ = 150°C
−
10
30*
TJ = −40°C
−
0.5
2.5
TJ = 25°C
−
−
2.0
TJ = 25°C
−
0.7
1.0
TJ = 150°C
−
12
25*
TJ = −40°C
−
0.1
1.0
TJ = 25°C
27
33
37
IC = −75 mA
TJ = 150°C
30
36
40
TJ = −40°C
25
32
35
IG = 5.0 mA
TJ = −40°C to
150°C
11
13
15
VDC
VGE = 10 V
TJ = −40°C to
150°C
384
640
700
mADC
−
TJ = −40°C to
150°C
10
16
26
kW
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
BVCES
ICES
VCE = 350 V,
VGE = 0 V
VCE = 15 V,
VGE = 0 V
Reverse Collector−Emitter Leakage Current
IECS
VCE = −24 V
Reverse Collector−Emitter Clamp Voltage
Gate−Emitter Clamp Voltage
BVCES(R)
BVGES
Gate−Emitter Leakage Current
IGES
Gate Emitter Resistor (Note 3)
RGE
mADC
mA
VDC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Maximum Value of Characteristic across Temperature Range.
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2
NGD8201B
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
1.2
1.5
1.8
VDC
TJ = 150°C
0.8
1.0
1.3
TJ = −40°C
1.4
1.7
2.0*
−
−
3.4
−
mV/°C
TJ = 25°C
1.0
1.2
1.5
VDC
TJ = 150°C
1.0
1.2
1.5
TJ = −40°C
1.0
1.2
1.5*
TJ = 25°C
1.2
1.4
1.6*
TJ = 150°C
1.2
1.4
1.6
TJ = −40°C
1.2
1.4
1.6*
TJ = 25°C
1.3
1.5
1.8
TJ = 150°C
1.3
1.5
1.9
TJ = −40°C
1.3
1.6
1.8*
TJ = 25°C
1.7
1.9
2.3
TJ = 150°C
1.9
2.2
2.5*
TJ = −40°C
1.5
1.9
2.3
TJ = 25°C
1.3
1.5
1.8*
TJ = 150°C
1.3
1.5
1.8*
TJ = −40°C
1.3
1.5
1.8*
IC = 6.5 A,
VGE = 3.7 V
TJ = 25°C
−
−
1.65
VCE = 5.0 V, IC = 6.0 A
TJ = −40°C to
150°C
8.0
14
25
Mhos
400
800
1000
pF
VCC = 25 V, VGE = 0 V
f = 1.0 MHz
TJ = −40°C to
150°C
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient
(Negative)
Collector−to−Emitter On−Voltage
−
−
VCE(on)
IC = 6.0 A,
VGE = 4.0 V
IC = 8.0 A,
VGE = 4.0 V
IC = 10 A,
VGE = 4.0 V
IC = 15 A,
VGE = 4.0 V
IC = 10 A,
VGE = 4.5 V
Forward Transconductance
gfs
DYNAMIC CHARACTERISTICS (Note 3)
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
50
75
100
4.0
7.0
10
SWITCHING CHARACTERISTICS (Note 3)
Turn−Off Delay Time (Resistive)
td(off)
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
TJ = 25°C
−
4.0
10
Fall Time (Resistive)
tf
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
TJ = 25°C
−
9.0
15
Turn−On Delay Time
td(on)
VCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
TJ = 25°C
−
0.7
4.0
tr
VCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
TJ = 25°C
−
4.5
7.0
Rise Time
mSec
mSec
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Maximum Value of Characteristic across Temperature Range.
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
3. Not production tested.
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3
NGD8201B
TYPICAL ELECTRICAL CHARACTERISTICS
ICE, COLLECTOR−EMITTER CURRENT (A)
100
CURRENT (A)
25°C
150°C
10
1
10
1
60
VCE = 10 V
50
−40°C
40
25°C
30
150°C
20
10
0
1
4
2
3
VGE, GATE TO EMITTER VOLTAGE (V)
INDUCTANCE (mH)
Figure 2. Transfer Characteristics
VGE = 10 V
ICE, COLLECTOR−EMITTER CURRENT (A)
60
6V
50
40
5V
4.5 V
30
4V
20
3.5 V
10
3V
2.5 V
0
0
1
2
3
4
5
6
7
8
9
10
60
VGE = 10 V
50
6V
40
5V
30
4.5 V
4V
20
3.5 V
10
3V
2.5 V
0
0
1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2
3
4
VGE = 10 V
6V
5V
50
4.5 V
40
4V
30
3.5 V
20
3V
10
2.5 V
0
1
2
3
6
7
8
Figure 4. On−Region Characteristics,
TJ = 1505C
60
0
5
9
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Output Characteristics, TJ = 255C
ICE, COLLECTOR−EMITTER CURRENT (A)
ICE, COLLECTOR−EMITTER CURRENT (A)
Figure 1. Maximum Single Pulse Switch Off
Current vs. Inductance
5
4
5
6
7
8
9
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. On−Region Characteristics,
TJ = −405C
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4
10
10
NGD8201B
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
1000
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
0.02
0.01
1
0.1
Single Pulse
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
t1
0.01
t2
TJ(pk) − TA = P(pk) RqJA(t)
RqJC X R(t) for t ≤ 0.2 s
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
t,TIME (S)
Figure 6. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area)
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5
NGD8201B
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
A
E
C
A
b3
B
c2
4
L3
D
1
2
Z
Z
H
DETAIL A
3
L4
NOTE 7
b2
e
b
TOP VIEW
c
SIDE VIEW
0.005 (0.13)
M
BOTTOM VIEW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
ALTERNATE
CONSTRUCTION
C
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
SEATING
PLANE
A1
ROTATED 905 CW
STYLE 7:
PIN 1.
2.
3.
4.
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GATE
COLLECTOR
EMITTER
COLLECTOR
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NCV7703B/D