NGD8201B Ignition IGBT, 20 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. www.onsemi.com Features • • • • • • • • • • • Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short−Circuit Capability These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCES 430 VDC Collector−Gate Voltage VCER 430 VDC Gate−Emitter Voltage VGE 18 VDC IC 15 50 ADC AAC Rating Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V PD 115 0.77 Watts W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range 20 AMPS, 400 VOLTS VCE(on) 3 1.8 V @ IC = 10 A, VGE . 4.5 V C G RGE E 4 1 2 3 MARKING DIAGRAM 1 Gate 2 Collector Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. AYWW NGD 8201BG 4 Collector 3 Emitter kV 8.0 DPAK CASE 369C STYLE 7 NGD8201B = Device Code A = Assemlby Location Y = Year WW = Work Week G = Pb−Free Device ORDERING INFORMATION Device Package Shipping† NGD8201BNT4G DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 4 1 Publication Order Number: NGD8201B/D NGD8201B UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 22 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 17 A, RG = 1000 W, L = 3.0 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 19 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 125°C EAS Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C Value Unit mJ 435 433 325 EAS(R) mJ 2000 THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient DPAK (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds RθJC 1.3 °C/W RθJA 95 °C/W TL 275 °C 1. When surface mounted to an FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit IC = 2.0 mA TJ = −40°C to 150°C 380 395 420 VDC IC = 10 mA TJ = −40°C to 150°C 390 405 430 TJ = 25°C − 1.5 5 TJ = 150°C − 10 30* TJ = −40°C − 0.5 2.5 TJ = 25°C − − 2.0 TJ = 25°C − 0.7 1.0 TJ = 150°C − 12 25* TJ = −40°C − 0.1 1.0 TJ = 25°C 27 33 37 IC = −75 mA TJ = 150°C 30 36 40 TJ = −40°C 25 32 35 IG = 5.0 mA TJ = −40°C to 150°C 11 13 15 VDC VGE = 10 V TJ = −40°C to 150°C 384 640 700 mADC − TJ = −40°C to 150°C 10 16 26 kW OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current BVCES ICES VCE = 350 V, VGE = 0 V VCE = 15 V, VGE = 0 V Reverse Collector−Emitter Leakage Current IECS VCE = −24 V Reverse Collector−Emitter Clamp Voltage Gate−Emitter Clamp Voltage BVCES(R) BVGES Gate−Emitter Leakage Current IGES Gate Emitter Resistor (Note 3) RGE mADC mA VDC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Maximum Value of Characteristic across Temperature Range. www.onsemi.com 2 NGD8201B ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 1.2 1.5 1.8 VDC TJ = 150°C 0.8 1.0 1.3 TJ = −40°C 1.4 1.7 2.0* − − 3.4 − mV/°C TJ = 25°C 1.0 1.2 1.5 VDC TJ = 150°C 1.0 1.2 1.5 TJ = −40°C 1.0 1.2 1.5* TJ = 25°C 1.2 1.4 1.6* TJ = 150°C 1.2 1.4 1.6 TJ = −40°C 1.2 1.4 1.6* TJ = 25°C 1.3 1.5 1.8 TJ = 150°C 1.3 1.5 1.9 TJ = −40°C 1.3 1.6 1.8* TJ = 25°C 1.7 1.9 2.3 TJ = 150°C 1.9 2.2 2.5* TJ = −40°C 1.5 1.9 2.3 TJ = 25°C 1.3 1.5 1.8* TJ = 150°C 1.3 1.5 1.8* TJ = −40°C 1.3 1.5 1.8* IC = 6.5 A, VGE = 3.7 V TJ = 25°C − − 1.65 VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 8.0 14 25 Mhos 400 800 1000 pF VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = −40°C to 150°C ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) Collector−to−Emitter On−Voltage − − VCE(on) IC = 6.0 A, VGE = 4.0 V IC = 8.0 A, VGE = 4.0 V IC = 10 A, VGE = 4.0 V IC = 15 A, VGE = 4.0 V IC = 10 A, VGE = 4.5 V Forward Transconductance gfs DYNAMIC CHARACTERISTICS (Note 3) Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS 50 75 100 4.0 7.0 10 SWITCHING CHARACTERISTICS (Note 3) Turn−Off Delay Time (Resistive) td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C − 4.0 10 Fall Time (Resistive) tf VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C − 9.0 15 Turn−On Delay Time td(on) VCC = 10 V, IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω TJ = 25°C − 0.7 4.0 tr VCC = 10 V, IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω TJ = 25°C − 4.5 7.0 Rise Time mSec mSec Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Maximum Value of Characteristic across Temperature Range. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. 3. Not production tested. www.onsemi.com 3 NGD8201B TYPICAL ELECTRICAL CHARACTERISTICS ICE, COLLECTOR−EMITTER CURRENT (A) 100 CURRENT (A) 25°C 150°C 10 1 10 1 60 VCE = 10 V 50 −40°C 40 25°C 30 150°C 20 10 0 1 4 2 3 VGE, GATE TO EMITTER VOLTAGE (V) INDUCTANCE (mH) Figure 2. Transfer Characteristics VGE = 10 V ICE, COLLECTOR−EMITTER CURRENT (A) 60 6V 50 40 5V 4.5 V 30 4V 20 3.5 V 10 3V 2.5 V 0 0 1 2 3 4 5 6 7 8 9 10 60 VGE = 10 V 50 6V 40 5V 30 4.5 V 4V 20 3.5 V 10 3V 2.5 V 0 0 1 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2 3 4 VGE = 10 V 6V 5V 50 4.5 V 40 4V 30 3.5 V 20 3V 10 2.5 V 0 1 2 3 6 7 8 Figure 4. On−Region Characteristics, TJ = 1505C 60 0 5 9 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Output Characteristics, TJ = 255C ICE, COLLECTOR−EMITTER CURRENT (A) ICE, COLLECTOR−EMITTER CURRENT (A) Figure 1. Maximum Single Pulse Switch Off Current vs. Inductance 5 4 5 6 7 8 9 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. On−Region Characteristics, TJ = −405C www.onsemi.com 4 10 10 NGD8201B R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) 1000 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 0.01 1 0.1 Single Pulse D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) t1 0.01 t2 TJ(pk) − TA = P(pk) RqJA(t) RqJC X R(t) for t ≤ 0.2 s DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 t,TIME (S) Figure 6. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) www.onsemi.com 5 NGD8201B PACKAGE DIMENSIONS DPAK CASE 369C ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 D 1 2 Z Z H DETAIL A 3 L4 NOTE 7 b2 e b TOP VIEW c SIDE VIEW 0.005 (0.13) M BOTTOM VIEW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW ALTERNATE CONSTRUCTION C H L2 GAUGE PLANE C L L1 DETAIL A SEATING PLANE A1 ROTATED 905 CW STYLE 7: PIN 1. 2. 3. 4. SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GATE COLLECTOR EMITTER COLLECTOR 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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