Product Overview NGD8209: Ignition IGBT, 12A, 410V For complete documentation, see the data sheet Product Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • • • • Ideal for CoilonPlug Applications DPAK Package Offers Smaller Footprint and Increased Board Space GateEmitter ESD Protection Temperature Compensated GateCollector Voltage Clamp Limits Stress Applied to Load • Low Saturation Voltage • High Pulsed Current Capability • These are PbFree Devices Applications End Products • Motorbike Ignition • Coil-on-Plug • Automotive Part Electrical Specifications Product Compliance Status V(BR)C IC ES Max Typ (A) (V) VCE(sa VF Typ t) Typ (V) (V) NGD8209NT4G AEC Qualified Active 410 2 12 Eoff Typ (mJ) Eon Typ (mJ) Trr Typ (ns) PPAP Capable Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Irr Typ (A) Gate Char ge Typ (nC) Short EAS Circui Typ t (mJ) Withs tand (µs) 274 PD Max (W) CoPack Pack age aged Type Diode 94 No DPA K-3