NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co−packaged reverse recovery diode with a low forward voltage. www.onsemi.com 15 A, 600 V VCEsat = 1.7 V Features • • • • • • Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications Soft Fast Reverse Recovery Diode 10 ms Short Circuit Capability Excellent Current versus Package Size Performance Density This is a Pb−Free Device C G Typical Applications E • White Goods Appliance Motor Control • General Purpose Inverter • AC and DC Motor Control C ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C Symbol Value Unit VCES 600 V IC A 30 15 ICM 120 A IF E MARKING DIAGRAM A IFM 120 A Gate−emitter voltage VGE $20 V Power dissipation @ TC = 25°C @ TC = 100°C PD Short circuit withstand time VGE = 15 V, VCE = 400 V, TJ v +150°C tSC 10 ms Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C 15N60G AYWW W 117 47 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. January, 2015 − Rev. 8 C 30 15 Diode pulsed current, Tpulse limited by TJmax © Semiconductor Components Industries, LLC, 2015 G TO−220 CASE 221A STYLE 9 1 Device NGTB15N60EG Package Shipping TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: NGTB15N60E/D NGTB15N60EG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction to case, for IGBT Rating RqJC 1.06 °C/W Thermal resistance junction to case, for Diode RqJC 3.76 °C/W Thermal resistance junction to ambient RqJA 60 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V , IC = 15 A VGE = 15 V , IC = 15 A, TJ = 150°C VCEsat 1.45 1.8 1.7 2.1 1.95 2.4 V VGE = VCE , IC = 250 mA VGE(th) 4.5 5.5 6.5 V VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − 10 − − 200 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Forward Transconductance VCE = 20 V, IC = 15 A gfs − 10.1 − S Cies − 2600 − Coes − 64 − Cres − 42 − Qg − 80 − Qge − 24 − Qgc − 33 − td(on) − 78 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate−emitter short−circuited DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 15 A, VGE = 15 V Gate to collector charge pF nC SWITCHING CHARACTERISTIC , INDUCTIVE LOAD Turn−on delay time Rise time tr − 30 − td(off) − 130 − tf − 120 − Eon − 0.900 − Turn−off switching loss Eoff − 0.300 − Total switching loss Ets − 1.200 − Turn−on delay time td(on) − 76 − tr − 33 − td(off) − 133 − tf − 223 − Eon − 1.10 − Turn−off switching loss Eoff − 0.510 − Total switching loss Ets − 1.610 − VF − − 1.6 1.6 1.85 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 15 A VGE = 0 V, IF = 15 A, TJ = 150°C www.onsemi.com 2 V NGTB15N60EG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit trr − 270 − ns Qrr − 350 − nc Irrm − 5 − A trr − 350 − ns Qrr − 1000 − nc Irrm − 7.5 − A DIODE CHARACTERISTIC Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current TJ = 25°C IF = 15 A, VR = 200 V diF/dt = 200 A/µs TJ = 125°C IF = 15 A, VR = 200 V diF/dt = 200 A/µs Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NGTB15N60EG TYPICAL CHARACTERISTICS 60 TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 60 VGE = 17 V to 13 V 50 40 11 V 30 20 10 9V 0 7V 0 1 2 3 4 5 TJ = 150°C VGE = 17 V to 15 V 50 13 V 40 30 11 V 20 9V 10 7V 0 6 7 8 0 3 4 5 6 7 8 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 2. IGBT Output Characteristics 9 60 50 IC, COLLECTOR CURRENT (A) TJ = −40°C IC, COLLECTOR CURRENT (A) 2 Figure 1. IGBT Output Characteristics 60 VGE = 17 V to 13 V 40 11 V 30 20 10 9V 0 7V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE = 20 V TJ = −40°C 50 40 25°C 30 150°C 20 10 0 0 8 Figure 3. IGBT Output Characteristics 4 8 12 VGE, GATE−EMITTER VOLTAGE (V) 16 Figure 4. Typical Transfer Characteristics 10000 3.5 VGE = 0 V, f = 1 MHz 3 IC = 30 A CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 1 2.5 IC = 15 A 2 1.5 IC = 5 A 1 Cies 1000 100 Coes IC = 10 A 0.5 Cres 0 −60 −40 −20 10 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 4 100 NGTB15N60EG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 35 −40°C 30 25 25°C 20 15 150°C 10 5 0 IC = 15 A 15 VCES = 120 V VCES = 480 V 10 5 0 0 0.5 1 1.5 2 2.5 20 0 VF, FORWARD VOLTAGE (V) 1.2 100 1000 1 Eoff tf SWITCHING TIME (ns) SWITCHING LOSS (mJ) 80 Figure 8. Typical Gate Charge Figure 7. Diode Forward Characteristics 0.8 0.6 Eon 0.4 VCE = 400 V VGE = 15 V IC = 15 A Rg = 22 W 0.2 0 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) td(off) 100 tr 10 1 160 td(on) VCE = 400 V VGE = 15 V IC = 15 A Rg = 22 W 0 40 60 80 100 120 140 160 180 200 Figure 10. Switching Time vs. Temperature 1000 3 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 22 W tf SWITCHING TIME (ns) 2 Eon Eoff 1 0 20 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature SWITCHING LOSS (mJ) 40 60 QG, GATE CHARGE (nC) 8 12 16 20 24 28 td(off) 100 tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 22 W 1 32 td(on) 8 12 16 20 24 28 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 5 32 NGTB15N60EG TYPICAL CHARACTERISTICS 1000 VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C 1.6 tf Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) 2 1.2 0.8 Eoff 0.4 5 15 25 35 45 55 65 75 tr 10 VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C 5 85 15 25 35 45 55 65 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 2 75 85 525 575 1000 VGE = 15 V IC = 15 A Rg = 22 W TJ = 150°C 1.6 SWITCHING TIME (ns) SWITCHING ENERGY (mJ) 100 1 0 Eon 1.2 0.8 Eoff tf td(off) 100 tr 225 275 325 375 425 475 525 VGE = 15 V IC = 15 A Rg = 22 W TJ = 150°C 1 175 575 td(on) 10 0.4 0 175 225 275 325 375 425 475 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. Collector−Emitter Voltage 1000 1000 1 ms 100 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) td(on) td(off) 100 50 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 1 10 100 10 1 0.1 VGE = 15 V, TC = 125°C 0.01 100 1 1000 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 6 NGTB15N60EG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 10 1 0.1 RqJC = 1.06 50% Duty Cycle Ri (°C/W) 20% 10% 5% Junction R1 Rn C2 Cn C1 1% Single Pulse 0.001 0.000001 Case Ci = ti/Ri 2% 0.01 R2 ti (sec) 0.1 0.05010 0.15051 0.33992 0.10550 7.1E−5 1.0E−4 0.002 0.003 0.00999 0.20020 0.03 0.11423 0.1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance THERMAL RESPONSE (ZqJC) 10 50% Duty Cycle 1 RqJC = 3.76 20% 10% 5% 2% Ri (°C/W) 0.1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 1% Single Pulse Junction R1 Rn Case Ci = ti/Ri 0.01 C1 0.001 0.000001 R2 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) C2 Cn 1 Figure 20. Diode Transient Thermal Impedance Figure 21. Test Circuit for Switching Characteristics www.onsemi.com 7 10 ti (sec) 0.01895 0.04097 0.12956 0.1 0.20199 1.0E−7 1.0E−6 1.0E−5 7.1E−5 1.0E−4 1.62730 0.002 0.57301 0.003 0.45453 0.00498 0.40199 0.03 0.21558 0.1 100 1000 NGTB15N60EG Figure 22. Definition of Turn On Waveform www.onsemi.com 8 NGTB15N60EG Figure 23. Definition of Turn Off Waveform www.onsemi.com 9 NGTB15N60EG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 9: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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