TYPICAL PERFORMANCE CURVES APT50GP60LDL(G) APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT® The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Features Typical Applications • Low Conduction Loss • Low Gate Charge • SSOA Rated • Induction Heating • RoHS Compliant • Welding G • Medical • Low forward Diode Voltage (VF) • High Power Telecom • Ultrasoft Recovery Diode • Resonant Mode Phase Shifted Bridge Symbol E C • Ultrafast Tail Current shutoff MAXIMUM RATINGS C G E All Ratings: TC = 25°C unless otherwise specified. Parameter VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM SSOA PD Pulsed Collector Current 7 @ TC = 25°C TL Volts 150 72 1 Amps 190 Switching Safe Operating Area @ TJ = 150°C 190A @ 600V Total Power Dissipation TJ,TSTG UNIT Ratings Watts 625 Operating and Storage Junction Temperature Range -55 to 150 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 600 VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) VCE(ON) I CES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) 2.1 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) I GES 525 2 Gate-Emitter Leakage Current (VGE = ±20V) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Units Volts μA 2750 ±100 nA 052-6354 Rev C 3-2012 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GP60LDL(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Total Gate Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr td(off ) tf Eon1 30 Gate Charge 7.5 VGE = 15V 165 VCE = 300V 40 I C = 50A 50 TJ = 150°C, R G = 4.3Ω, VGE = 15V, L = 100μH,VCE = 600V 36 Turn-off Delay Time 85 Current Fall Time I C = 50A 60 Turn-on Switching Energy RG = 4.3Ω 19 Current Rise Time VCC = 400V 36 Turn-off Delay Time VGE = 15V 115 Turn-on Delay Time I C = 50A Current Fall Time Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy ns μJ 55 ns 85 465 RG = 4.3Ω 44 Turn-on Switching Energy nC 635 Inductive Switching (125°C) Eon2 V 835 6 Eon1 pF 465 TJ = +25°C 5 UNIT A VGE = 15V 4 MAX 190 Current Rise Time Turn-off Switching Energy tf f = 1 MHz 19 Eoff td(off ) 465 VCC = 400V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V Inductive Switching (25°C) Eon2 td(on) 5700 Gate-Emitter Charge Gate-Collector ("Miller ") Charge TYP Capacitance 3 Qgc MIN TJ = +125°C μJ 1260 6 1060 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .20 RθJC Junction to Case (DIODE) .63 WT Package Weight 6.10 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 052-6354 Rev C 3-2012 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. UNIT °C/W gm APT50GP60LDL(G) 70 70 60 60 IC, COLLECTOR CURRENT (A) 50 40 TJ = -55°C 30 TJ = 25°C 20 TJ = 125°C 40 TJ = -55°C 30 TJ = 25°C 20 TJ = 125°C 10 10 0 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 FIGURE 1, Output Characteristics(VGE = 15V) 100 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) FIGURE 2, Output Characteristics (VGE = 10V) 16 250μs PULSE TEST<0.5 % DUTY CYCLE 90 80 70 60 50 TJ = -55°C 40 TJ = 25°C 30 TJ = 125°C 20 10 0 0 1 2 3 4 5 6 7 8 9 VGE, GATE-TO-EMITTER VOLTAGE (V) VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 20 40 60 80 100 120 140 160 180 GATE CHARGE (nC) FIGURE 4, Gate Charge 3 IC = 100A 3.0 TJ = 25°C. 250μs PULSE TEST <0.5 % DUTY CYCLE 2.5 IC = 50A 2.0 IC = 25A 1.5 1.0 0.5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) J 33.5 FIGURE 3, Transfer Characteristics 6 IC = 100A IC = 50A 2 IC = 25A 1.5 1 0.5 VGE = 15V. 250μs PULSE TEST <0.5 % DUTY CYCLE 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 1.20 -25 200 180 IC, DC COLLECTOR CURRENT(A) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 2.5 0 -50 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) I = 50A C T = 25°C 14 0 10 3.5 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 160 140 120 100 80 60 Lead Temperature Limited 40 20 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 052-6354 Rev C 3-2012 IC, COLLECTOR CURRENT (A) TYPICAL PERFORMANCE CURVES APT50GP60LDL(G) 140 VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25 20 15 10 5 VCE = 400V TJ = 25°C or 125°C 0 RG = 4.3Ω L = 100μH 100 VGE =15V,TJ=125°C 80 60 VGE =15V,TJ=25°C 40 20 VCE = 400V RG = 4.3Ω L = 100μH 0 20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 90 120 20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 RG = 4.3Ω, L = 100μH, VCE = 400V RG = 4.3Ω, L = 100μH, VCE = 400V 80 TJ = 125°C, VGE = 15V 100 60 tf, FALL TIME (ns) tr, RISE TIME (ns) 70 50 40 30 80 60 TJ = 25°C, VGE = 15V 40 TJ = 25 or 125°C,VGE = 15V 20 20 10 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 V = 400V CE V = +15V GE R = 4.3Ω EON2, TURN ON ENERGY LOSS (μJ) 3500 2500 2000 1500 1000 G 2500 TJ = 125°C 2000 1500 1000 TJ = 25°C 500 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current Eon2,100A 4000 Eoff,100A 3000 2000 Eon2,50A Eoff,50A 1000 Eon2,25A Eoff,25A 0 V = 400V CE V = +15V GE R = 4.3Ω 3500 J 5000 20 4000 V = 400V CE V = +15V GE T = 125°C 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (μJ) SWITCHING ENERGY LOSSES (μJ) 3000 0 20 6000 052-6354 Rev C 3-2012 V = 400V CE V = +15V GE R = 4.3Ω TJ = 25°C 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 0 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3500 G 500 20 TJ = 125°C 3000 0 0 20 EOFF, TURN OFF ENERGY LOSS (μJ) 0 G Eon2,100A 3000 Eoff,100A 2500 2000 1500 1000 Eon2,50A 500 Eon2,25A Eoff,50A 0 Eoff,25A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES APT50GP60LDL(G) 10,000 200 Cies IC, COLLECTOR CURRENT (A) 180 P C, CAPACITANCE ( F) 1,000 500 Coes 100 50 160 140 120 100 80 60 Cres 40 20 10 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.20 0.16 0.7 0.12 0.5 Note: 0.08 0.3 P DM ZθJC, THERMAL IMPEDANCE (°C/W) D = 0.9 t1 SINGLE PULSE 0.04 t2 t 0.1 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.05 0 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 220 RC MODEL 100 0.00463 0.0193 0.00218 0.0658 0.0142 0.0658 .1055 0.0142 .346 Powe r (watts ) Case temperature. ( °C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf 50 T = 125°C J T = 75°C C D = 50 % V = 667V CE R = 5Ω 10 G f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 052-6354 Rev C 3-2012 0.00908 FMAX, OPERATING FREQUENCY (kHz) Junctio n temp. ( °C) APT50GP60LDL(G) APT50DL60 10% Gate Voltage T J = 125 °C td(on) V CE IC V CC Collector Current tr 90% A 5% D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions t 90% Gate Voltage tf Collector Voltage 90% 0 Switching Energy 10% Collector Current Figure 23, Turn-off Switching Waveforms and Definitions 052-6354 Rev C 3-2012 5 % Collector Voltage Switching Energy Figure 21, Inductive Switching Test Circui td(off) 10% T J = 125 °C TYPICAL PERFORMANCE CURVES APT50GP60LDL(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT50GP60LDL(G) Maximum Average Forward Current (TC = 124°C, Duty Cycle = 0.5) 50 RMS Forward Current (Square wave, 50% duty) 150 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 320 UNIT Amps STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions MIN Forward Voltage TYP MAX IF = 50A 1.25 1.6 IF = 100A 2.0 IF = 50A, TJ = 125°C 1.25 UNIT Volts DYNAMIC CHARACTERISTICS Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current IF = 50A, diF/dt = -200A/μs Reverse Recovery Time IF = 50A, diF/dt = -200A/μs Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current trr VR = 400V, TC = 25°C VR = 400V, TC = 125°C Reverse Recovery Time IF = 50A, diF/dt = -1000A/μs Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current VR = 400V, TC = 125°C MIN TYP MAX UNIT - 52 - 399 - 1498 - 9 - 649 ns - 3734 nC - 13 - 284 ns - 5134 nC - 34 Amps ns nC - - Amps Amps 0.6 0.5 0.4 0.3 Note: 0.2 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.7 t1 t2 t 0.1 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION T J (°C) T C (°C) 0.316 Dissipated Powe r (Watts ) 0.00467 0.312 0.1483 Z EXT are the external therma l impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction . FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 052-6354 Rev C 3-2012 trr IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Z EXT Symbol TYPICAL PERFORMANCE CURVES APT50GP60LDL(G) 700 120 TJ= 125°C R trr, COLLECTOR CURRENT (A) IF, FORWARD CURRENT (A) 100 TJ= 55°C 80 TJ= 25°C 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 100A R 6000 50A 5000 25A 4000 3000 2000 1000 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 50A 400 25A 300 200 100 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 0 40 T = 125°C J V = 400V R 50A 100A 35 30 25A 25 20 15 10 5 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change tRR 1.0 IRRM 0.8 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 500 45 T = 125°C J V = 400V 7000 600 0 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 0 8000 T = 125°C J V = 400V 100A TJ= 150°C QRR 0.6 0.4 0.2 Duty cycle = 0.5 TJ = 126°C 0 0 25 50 75 100 125 150 CJ, JUNCTION CAPACITANCE (pF) 052-6354 Rev C 3-2012 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 500 450 400 350 300 250 200 150 100 50 0 0 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature TYPICAL PERFORMANCE CURVES APT50GP60LDL(G) Vr diF /dt Adjus t +18V 0V D.U.T. trr/Q rr Wavefor m CURRENT TRANSFORMER Figure 9. Diode Test Circui 1 I F - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. t 1 4 6 Zer o 3 I RRM - Maximum Reverse Recovery Current 4 e diode trr - Revers e R ecovery Time, measured from zero crossing wher current goes from positive to negative, to the point at which the straight line through I RRM and 0.25 I RRM passes through zero . . 5 5 Q rr - Area Under the Curve Defined by I 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of t RRM 3 2 0.25 I RRM Slope = di M/dt and trr. rr. Figure 10, Diode Reverse Recovery Waveform and Definition s TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 2.29 (.090) 2.69 (.106) Gate Collector (Cathode) Emitter (Anode) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 052-6354 Rev C 3-2012 Collector (Cathode) 5.79 (.228) 6.20 (.244)