UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N60 is universally applied in active power factor correction and high efficient switched mode power supplies. FEATURES * RDS(ON) < 0.65Ω @ VGS=10V, ID=7.5A * High switching speed * Improved dv/dt capability SYMBOL RDERING INFORMATION Ordering Number Lead Free Halogen Free 15N60L-TF1-T 15N60G-TF1-T 15N60L-TF1-T 15N60G-TF1-T 15N60L-TF2-T 15N60G-TF2-T 15N60L-T47-T 15N60G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-247 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-485.G 15N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 15 A Continuous ID 15 A Continuous Drain Current 60 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 420 mJ Avalanche Energy 25.0 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 147 TO-220F1 38.5 Power Dissipation PD W TO-220F2 52 TO-247 312 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=5.23mH, IAS=15A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL RESISTANCES CHARACTERISTICS PARAMETER TO-220/TO-220F1 TO-220F2 Junction to Ambient TO-247 TO-220 TO-220F1 Junction to Case TO-220F2 TO-247 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 40 0.85 3.3 2.4 0.4 UNIT °C/W °C/W 2 of 6 QW-R502-485.G 15N60 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS BVDSS VGS=0V, ID=250µA, TJ=25°C 600 V ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C 0.65 V/°C VDS=600V, VGS=0V 1 µA IDSS 10 µA VDS=520V, TC=125°C VGS=+30V, VDS=0V +100 nA IGSS -100 nA VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=325V, ID=15A, RG=21.7Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge QG VDS=520V, VGS=10V, Gate-Source Charge QGS ID=15A (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =15A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=15A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 3. Drain current limited by maximum junction temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 2.0 4.0 0.45 0.65 V Ω 2400 3095 270 385 25 35.5 pF pF pF 100 200 500 210 270 25 51 140 260 550 250 300 ns ns ns ns nC nC nC 15 60 1.4 A A V ns μC 496 5.69 3 of 6 QW-R502-485.G 15N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-485.G 15N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-485.G 15N60 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Body-Diode Continuous Current, IS (A) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-485.G