NTS260ESF, NRVTS260ESF Very Low Forward Voltage Trench-based Schottky Rectifier Features www.onsemi.com • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices TRENCH SCHOTTKY RECTIFIER 2.0 AMPERES 60 VOLTS SOD−123FL CASE 498 PLASTIC Mechanical Characteristics: • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 11.7 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds MSL 1 MARKING DIAGRAM AACMG G Typical Applications • Switching Power Supplies including Compact Adapters and Flat • • • • Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation AAC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† NTS260ESFT3G SOD−123FL (Pb−Free) 10,000/ Tape & Reel NRVTS260ESFT3G SOD−123FL (Pb−Free) 10,000/ Tape & Reel NTS260ESFT1G SOD−123FL (Pb−Free) 3,000/ Tape & Reel NRVTS260ESFT1G SOD−123FL (Pb−Free) 3,000/ Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 1 1 Publication Order Number: NTS260ESF/D NTS260ESF, NRVTS260ESF MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 60 V IO 2.0 A Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = TBD°C) IFRM 4.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 25 A Tstg, TJ −65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = TBD°C) Storage and Operating Junction Temperature Range (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 24.4 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 85 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 330 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR V 0.55 0.65 0.47 0.58 12 3 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NTS260ESF, NRVTS260ESF TYPICAL CHARACTERISTICS iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C TA = 150°C 10 TA = 125°C 1 TA = 85°C TA = 25°C TA = −55°C 0.1 0.3 0.5 0.7 0.9 1.3 1.1 1 TA = 85°C TA = 25°C TA = −55°C 0.2 1.5 0.6 0.4 0.8 1.4 1.2 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.6 1.E−01 1.E−01 1.E−02 TA = 150°C 1.E−04 TA = 125°C 1.E−05 TA = 85°C 1.E−06 TA = 175°C 1.E−02 TA = 175°C 1.E−03 TA = 150°C 1.E−03 TA = 125°C 1.E−04 TA = 85°C 1.E−05 TA = 25°C 1.E−06 TA = 25°C 1.E−07 1.E−07 10 20 30 50 40 60 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 C, JUNCTION CAPACITANCE (pF) TA = 150°C TA = 125°C IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 TA = 175°C 10 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TJ = 25°C 100 10 0.1 1 10 4 DC RqJL = 24.4°C/W 3 SQUARE WAVE 2 1 0 0 10 20 30 40 50 60 70 80 90100110120130140150160170 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 60 NTS260ESF, NRVTS260ESF PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. D 1 2 DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − SIDE VIEW 2X L b INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° RECOMMENDED SOLDERING FOOTPRINT* c 2X MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° 2X 1.22 BOTTOM VIEW ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 2X 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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