MBRM2H100 D

MBRM2H100T3G,
NRVBM2H100T3G
Surface Mount
Schottky Power Rectifier
POWERMITE®
Power Surface Mount Package
http://onsemi.com
The Schottky Powermite® employs the Schottky Barrier principle
with a barrier metal and epitaxial construction that produces optimal
forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the Powermite® has the same thermal performance as the SMA while
being 50% smaller in footprint area. Because of its small size, it is
ideal for use in portable and battery powered products such as cellular
and cordless phones, chargers, notebook computers, printers, PDAs
and PCMCIA cards. Typical applications are AC−DC and DC−DC
converters, reverse battery protection, and “ORing” of multiple supply
voltages and any other application where performance and size are
critical.
Features
•
•
•
•
•
•
•
January, 2014 − Rev. 2
ANODE
POWERMITE
CASE 457
1
M
B2H
G
1
M
B2HG
2
= Date Code
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRM2H100T3G
Powermite
(Pb−Free)
12000/Tape &
Reel
NRVBM2H100T3G
Powermite
(Pb−Free)
12000/Tape &
Reel
Device
Powermite® is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
© Semiconductor Components Industries, LLC, 2014
CATHODE
MARKING DIAGRAM
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
This is a Pb−Free Device
Mechanical Characteristics:
•
•
•
•
•
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 100 VOLTS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBRM2H100/D
MBRM2H100T3G, NRVBM2H100T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 160°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IO
2.0
A
IFSM
50
A
Tstg, TJ
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
YJCL
12
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
75
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
RqJA
260
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
0.76
0.84
0.61
0.68
20
1.0
V
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com
2
MBRM2H100T3G, NRVBM2H100T3G
TYPICAL CHARACTERISTICS
100
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
25°C
150°C 125°C
10
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
1.4
10
1
0.1
1.6
0.6
0.8
1.0
1.2
1.4
1.6
Figure 2. Maximum Forward Voltage
1.8
10
IR, REVERSE CURRENT (mA)
150°C
125°C
0.01
0.001
25°C
0.0001
0
10
20
30
40
50
60
70
80
90
0.01
25°C
0.001
0.00001
0
100
10
20
30
40
50
60
70
80
90 100
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
RqJL = 12°C/W
dc
3.0
Square Wave
2.0
1.5
1.0
0.5
140
125°C
0.1
0.0001
4.0
0
135
150°C
1
145
150
155
160
165
170
175
PFO, AVERAGE POWER DISSIPATION (W)
IR, REVERSE CURRENT (mA)
IF(AV), AVERAGE FORWARD CURRENT (A)
0.4
Figure 1. Typical Forward Voltage
0.1
2.5
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1
3.5
0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
10
0.00001
25°C
150°C 125°C
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
TJ = 175°C
Square Wave
dc
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
http://onsemi.com
3
MBRM2H100T3G, NRVBM2H100T3G
TYPICAL CHARACTERISTICS
140
TJ = 25°C
C, CAPACITANCE (pF)
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance
1000
R(t) (C/W)
100
10
1.0
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
10
100
1000
PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad)
100
50% (DUTY CYCLE)
25%
R(t) (C/W)
10
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
http://onsemi.com
4
MBRM2H100T3G, NRVBM2H100T3G
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE F
F
0.08 (0.003)
C
−A−
J
M
T B
S
C
S
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.15 (0.006) PER SIDE.
DIM
A
B
C
D
F
H
J
K
L
R
S
PIN 1
−B−
K
PIN 2
R
L
J
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.75
2.05 0.069
0.081
1.75
2.18 0.069
0.086
0.85
1.15 0.033
0.045
0.40
0.69 0.016
0.027
0.70
1.00 0.028
0.039
-0.05
+0.10 -0.002 +0.004
0.10
0.25 0.004
0.010
3.60
3.90 0.142
0.154
0.50
0.80 0.020
0.031
1.20
1.50 0.047
0.059
0.50 REF
0.019 REF
D
H
−T−
0.08 (0.003)
M
T B
S
C
S
SOLDERING FOOTPRINT*
0.635
0.025
2.67
0.105
0.762
0.030
2.54
0.100
1.27
0.050
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBRM2H100/D