MBR2H200SF D

MBR2H200SFT3G
Surface Mount
Schottky Power Rectifier
Plastic SOD−123FL Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. Because of its small size, it is ideal for use in
portable and battery powered products such as cellular and cordless
phones, chargers, notebook computers, printers, PDAs and PCMCIA
cards. Typical applications are AC−DC and DC−DC converters,
reverse battery protection, and “Oring” of multiple supply voltages
and any other application where performance and size are critical.
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SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
200 VOLTS
Features
•
•
•
•
•
Guardring for Stress Protection
Low Forward Voltage
Epoxy Meets UL 94 V−0
Package Designed for Optimal Automated Board Assembly
These are Pb−Free Devices
SOD−123FL
CASE 498
MARKING DIAGRAM
Mechanical Characteristics
•
•
•
•
•
•
•
•
Reel Options: MBR2H200SFT3G = 10,000 per 13 in reel/8 mm tape
Device Marking: L2J
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
L2JMG
G
L2J
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBR2H200SFT3G
SOD−123
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0
1
Publication Order Number:
MBR2H200SF/D
MBR2H200SFT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
200
V
IO
2.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 105°C)
IFRM
4.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
30
A
Tstg, TJ
−55 to +150
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 108°C)
Storage and Operating Junction Temperature Range (Note 1)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
YJCL
23
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
85
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
RqJA
330
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
V
0.86
0.94
0.71
0.78
200
2
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
MBR2H200SFT3G
TYPICAL CHARACTERISTICS
TL = 150°C
10
TL = 25°C
iF, INSTANTANEOUS FORWARD
CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
10
TL = −55°C
TL = 125°C
1
TL = 25°C
TL = −55°C
TL = 125°C
1
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2.0
0.4
0.6
0.8
1.0
1.2
1.6
1.4
1.8 2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−03
1.E−01
TL = 150°C
1.E−04
1.E−05
TL = 150°C
1.E−02
1.E−03
TL = 125°C
1.E−06
TL = 125°C
1.E−04
1.E−07
1.E−05
1.E−08
1.E−06
1.E−09
TL = 25°C
1.E−07
TL = 25°C
1.E−10
TL = −55°C
1.E−08
TL = −55°C
1.E−11
20
40
60
80
1.E−09
100 120 140 160 180 200
0
20
40
60
80
100 120 140 160 180 200
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
IF(AV), AVERAGE FORWARD CURRENT (A)
0
100
TL = 25°C
10
1
1
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0
C, JUNCTION CAPACITANCE (pF)
TL = 150°C
10
100
4.0
3.5
RqJL = 23°C/W
DC
3.0
2.5
Square Wave
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
VR, REVERSE VOLTAGE (V)
TL, LEAD TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Diode
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3
140
MBR2H200SFT3G
TYPICAL CHARACTERISTICS
5
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
TJ = 150°C
IPK/IAV = 20
4
IPK/IAV = 10
3
IPK/IAV = 5
2
DC
1
Square Wave
0
0
0.5
1.0
1.5
2.0
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
1000
R(t) (C/W)
100
10
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
10
100
1000
PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad)
100
50% (DUTY CYCLE)
25%
R(t) (C/W)
10
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
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4
MBR2H200SFT3G
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT
SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM
FROM THE LEAD TIP.
E
q
D
DIM
A
A1
b
c
D
E
L
HE
q
A1
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
b
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MILLIMETERS
NOM
MAX
0.95
1.00
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
SOLDERING FOOTPRINT*
HE
q
c
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
1.22
0.048
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 81−3−5817−1050
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ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
MBR2H200SF/D