NSVR201MX Advance Information Schottky Barrier Diode for Mixer and Detector Automotive Schottky Barrier Diode designed for compact and efficient designs. AEC-Q101 qualified Schottky Barrier Diode and PPAP capable suitable for automotive applications. Features • Small Interterminal Capacitance • Less Parasitic Components • Small Forward Voltage • Small-sized Package • Pb-Free, Halogen Free and RoHS compliance • AEC-Q101 qualified and PPAP capable 2V, 50mA C=0.25pF typ. Shottky Barrier Diode X2DFN2 1.0x0.6, 0.65P Typical Applications • Microwave and Milliwave Mixer • Microwave and Milliwave Detector ELECTRICAL CONNECTION Symbol 2 Anode 1 Cathode SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1) Parameter www.onsemi.com Value Unit Reverse Voltage VR 2 V Forward Current IF 50 mA Operating Junction and Storage Temperature TJ, Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM FM F M ■ = Specific Device Code = Date Code = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2016 June 2016 - Rev. P1 1 Publication Order Number : NSVR201MX/D NSVR201MX ELECTRICAL CHARACTERISTICS at Ta = 25°C (Notes 2, 3) Parameter Symbol Conditions Reverse Voltage VR IR = 10μA Forward Voltage VF Series Resistance RS IF = 1mA IF = 10mA Interterminal Capacitance C VR = 0V, f = 1MHz Value min typ Unit max 2 V 320 mA 14 18 Ω 0.15 0.20 pF Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 3 : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. www.onsemi.com 2 NSVR201MX www.onsemi.com 3 NSVR201MX S Parameter (Zo=50Ω) Freq[GHz] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 I = 0mA MAG ANG 0.964 -4.4 0.967 -9.7 0.957 -15.2 0.956 -20.5 0.961 -26.0 0.954 -32.3 0.943 -39.2 0.943 -45.7 0.947 -52.8 0.940 -60.6 0.921 -69.7 0.895 -80.4 0.882 -88.8 0.872 261.9 0.870 252.7 0.874 242.8 0.874 231.6 0.877 220.8 0.860 210.3 0.847 198.7 0.841 185.5 0.847 171.1 0.845 157.2 0.822 142.0 0.823 130.3 0.833 118.3 I = 0.02mA MAG ANG 0.988 -4.3 0.990 -9.6 0.981 -15.1 0.980 -20.3 0.986 -25.7 0.981 -31.9 0.969 -38.7 0.967 -45.2 0.975 -52.2 0.968 -59.9 0.950 -68.9 0.928 -79.4 0.912 -87.7 0.906 263.1 0.900 253.9 0.903 244.1 0.907 233.1 0.911 222.5 0.895 212.1 0.880 200.7 0.875 187.4 0.883 173.3 0.877 159.6 0.854 144.5 0.852 132.6 0.863 120.7 I = 0.05mA MAG ANG 0.978 -4.3 0.981 -9.6 0.971 -15.2 0.970 -20.5 0.977 -25.9 0.970 -32.1 0.959 -39.0 0.958 -45.4 0.963 -52.5 0.957 -60.2 0.939 -69.3 0.914 -79.9 0.900 -88.2 0.893 262.4 0.887 253.2 0.891 243.4 0.894 232.3 0.898 221.6 0.881 211.1 0.866 199.6 0.860 186.4 0.868 172.2 0.864 158.3 0.840 143.2 0.840 131.4 0.850 119.5 I = 0.1mA MAG ANG 0.963 -4.3 0.966 -9.7 0.956 -15.2 0.956 -20.5 0.960 -26.0 0.953 -32.3 0.942 -39.2 0.942 -45.7 0.946 -52.8 0.938 -60.6 0.919 -69.7 0.893 -80.4 0.881 -88.8 0.871 261.9 0.868 252.6 0.873 242.7 0.873 231.6 0.875 220.7 0.859 210.2 0.845 198.7 0.840 185.4 0.846 171.1 0.843 157.1 0.821 142.1 0.822 130.3 0.832 118.2 www.onsemi.com 4 I = 0.2mA MAG ANG 0.933 -4.4 0.937 -9.7 0.925 -15.4 0.925 -20.6 0.929 -26.2 0.919 -32.5 0.909 -39.6 0.911 -46.2 0.910 -53.3 0.902 -61.2 0.883 -70.4 0.852 -81.2 0.843 -89.6 0.831 261.0 0.830 251.6 0.838 241.6 0.833 230.4 0.833 219.3 0.817 208.7 0.806 197.2 0.800 184.0 0.803 169.3 0.804 155.1 0.782 140.1 0.788 128.6 0.797 116.5 I = 0.5mA MAG ANG 0.845 -4.3 0.852 -9.5 0.838 -15.7 0.840 -20.4 0.838 -26.3 0.822 -32.5 0.814 -40.4 0.823 -47.4 0.809 -54.2 0.799 -62.6 0.777 -72.0 0.738 -83.5 0.735 267.9 0.715 258.8 0.723 249.0 0.733 238.1 0.720 227.0 0.715 215.4 0.700 204.2 0.692 192.7 0.687 179.7 0.683 164.0 0.696 149.5 0.680 134.7 0.695 123.3 0.703 111.1 NSVR201MX PACKAGE DIMENSIONS unit : mm X2DFN2 1.0x0.6, 0.65P CASE 714AB ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. 0.10 C A B D PIN 1 INDICATOR E DIM A A1 b D E e L 0.05 C TOP VIEW NOTE 3 0.10 C A 0.10 C A1 C SIDE VIEW MILLIMETERS MIN MAX 0.34 0.40 0.05 0.45 0.55 1.00 BSC 0.60 BSC 0.65 BSC 0.20 0.30 GENERIC MARKING DIAGRAM* SEATING PLANE XX M e b e/2 0.05 M C A B XX = Specific Device Code M = Date Code = Pb-Free Package L 0.05 M C A B *This information is generic. Please refer to device data sheet for actual part 1 2X BOTTOM VIEW RECOMMENDED SOLDER FOOTPRINT* 1.20 2X 2X 0.47 0.60 PIN 1 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION Device NSVR201MXT5G Marking Package Shipping F X2DFN2 1.0×0.6, 0.65P ( Pb-Free / Halogen Free) 8,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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