BAT54SL Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • S Prefix for Automotive and Other Applications Requiring Unique • www.onsemi.com 30 VOLT DUAL HOT−CARRIER DETECTOR AND SWITCHING DIODES Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SOT−23 CASE 318 STYLE 11 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C Forward Current (DC) IF 200 Max mA 600 1.0 mA A Rating Non−Repetitive Peak Forward Current tp < 10 msec Square pulse = 1 sec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 1 ANODE 2 CATHODE 3 CATHODE/ANODE MARKING DIAGRAM LD3M G G mA 300 1 Junction Temperature TJ −55 to 150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. LD3 M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAT54SLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SBAT54SLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 16 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAT54SLT1/D BAT54SL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 − − − 7.6 10 − 0.5 2.0 − − − − − 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 − − 5.0 Unit V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr V pF Adc V ns 820 +10 V 2k 100 H 0.1 F IF tr 0.1 F tp T IF trr 10% T DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAT54SL 100 IF, FORWARD CURRENT (mA) 1 25°C 85°C 10 1 50°C 1.0 25°C 0.1 0.0 −40°C −55°C 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0.6 Figure 2. Forward Voltage 1000 IR, REVERSE CURRENT (A) TA = 150°C 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 0.001 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 3. Leakage Current CT, TOTAL CAPACITANCE (pF) 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance www.onsemi.com 3 25 30 BAT54SL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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