M1MA141WAT1 D

M1MA141WAT1G,
M1MA142WAT1G,
SM1MA142WAT1G
Common Anode Silicon
Dual Switching Diode
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This Common Anode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC−70 package which is designed for low
power surface mount applications.
Features





Fast trr, < 10 ns
Low CD, < 15 pF
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SC−70 (SOT−323)
CASE 419
STYLE 4
ANODE
3
MAXIMUM RATINGS (TA = 25C)
Rating
Symbol
Reverse Voltage
M1MA141WAT1G
M1MA142WAT1G, SM1MA142WAT1G
VR
Peak Reverse Voltage
M1MA141WAT1G
M1MA142WAT1G, SM1MA142WAT1G
VRM
Forward Current
Single
Dual
IF
Peak Forward Current
Single
Dual
Peak Forward Surge Current
M1MA141WAT1G
M1MA142WAT1G, SM1MA142WAT1G
IFM
IFSM
(Note 1)
Value
Unit
40
80
MARKING DIAGRAM
Vdc
40
80
mAdc
500
750
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
Max
Unit
Power Dissipation
PD
150
mW
Junction Temperature
TJ
150
C
Storage Temperature
Tstg
−55 ~ + 150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 sec
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
November, 2011 − Rev. 10
Mx = Device Code
x
= N for 141
O for 142
M = Date Code*
G
= Pb−Free Package
mAdc
225
340
Symbol
 Semiconductor Components Industries, LLC, 2011
Mx M G
G
mAdc
100
150
THERMAL CHARACTERISTICS
Rating
1 CATHODE 2
Vdc
1
ORDERING INFORMATION
Package
Shipping†
M1MA141WAT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
M1MA142WAT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
SM1MA142WAT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
M1MA141WAT1/D
M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristic
Reverse Voltage Leakage Current
M1MA141WAT1G
M1MA142WAT1G, SM1MA142WAT1G
Condition
VR = 35 V
VR = 75 V
Symbol
IR
Min
Max
−
−
0.1
0.1
−
1.2
40
80
−
−
Unit
mAdc
Forward Voltage
IF = 100 mA
VF
Reverse Breakdown Voltage
M1MA141WAT1G,
M1MA142WAT1G, SM1MA142WAT1G
IR = 100 mA
VR
VR = 0, f = 1.0 MHz
CD
−
15
pF
IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
trr
(Note 2)
−
10
ns
Diode Capacitance
Reverse Recovery Time (Figure 1)
2. trr Test Circuit
http://onsemi.com
2
Vdc
Vdc
M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
t
t
10%
RL
A
Irr = 0.1 IR
90%
VR
IF = 10 mA
VR = 6 V
RL = 100 W
tp = 2 ms
tr = 0.35 ns
Figure 1. Recovery Time Equivalent Test Circuit
10
100
IR , REVERSE CURRENT (A)
TA = 85C
10
TA = -40C
1.0
TA = 25C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
0
1.2
10
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current
0.68
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150C
0.64
0.6
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance
http://onsemi.com
3
8
50
M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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M1MA141WAT1/D