MBR1060 SWITCHMODEt Power Rectifiers Features • • • • • • • • Guard−Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 VOLTS 3 1, 4 Mechanical Characteristics MARKING DIAGRAM • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal 4 Leads are Readily Solderable • Lead Temperature for Soldering Purposes: • TO−220AC CASE 221B PLASTIC 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C AY WWG B1060 KA 1 3 A Y WW G B1060 KA = Assembly Location = Year = Work Week = Pb−Free Package = Device Code = Diode Polarity ORDERING INFORMATION Device MBR1060 MBR1060G Package Shipping TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2009 December, 2009 − Rev. 11 1 Publication Order Number: MBR1060/D MBR1060 MAXIMUM RATINGS Symbol MBR1060 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature (Note 1) TJ *65 to +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TC = 125°C) (iF = 10 Amps, TC = 25°C) (iF = 20 Amps, TC = 125°C) (iF = 20 Amps, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 V 0.7 0.8 0.85 0.95 mA 22 0.10 10 50 TJ = 150°C 20 IR , REVERSE CURRENT (mA) 150°C 10 100°C 125°C 5.0 3.0 TJ = 25°C 1.0 1.0 125°C 0.1 100°C 0.01 0.001 25°C 0.5 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 0.7 1.0 0.9 20 40 60 Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current I F(AV) , AVERAGE FORWARD CURRENT (AMPS) RATED VOLTAGE APPLIED RqJC = 2°C/W dc 15 SQUARE WAVE 10 5.0 0 100 120 140 TC, CASE TEMPERATURE (°C) 160 20 (HEATSINK) RqJA = 16°C/W (NO HEATSINK) RqJA = 60°C/W 15 dc 5.0 180 SQUARE WAVE 0 0 20 40 60 8.0 IPK/IAV = p 7.0 6.0 IPK/IAV = 5.0 5.0 IPK/IAV = 10 dc IPK/IAV = 20 3.0 SQUARE WAVE 2.0 1.0 0 1.0 100 120 140 160 Figure 4. Typical Current Derating, Ambient TA = 25°C 0 80 TA, AMBIENT TEMPERATURE (°C) 10 4.0 RATED VOLTAGE APPLIED dc 10 Figure 3. Typical Current Derating, Case 9.0 100 80 VR, REVERSE VOLTAGE (VOLTS) 20 80 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR1060 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 IF(AV), AVERAGE CURRENT (AMPS) Figure 5. Forward Power Dissipation http://onsemi.com 3 10 180 MBR1060 PACKAGE DIMENSIONS TO−220 CASE 221B−04 ISSUE E C B Q F T S DIM A B C D F G H J K L Q R S T U 4 A 1 3 U H K L R D G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. J INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 0.89 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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