MBR120LSFT1 D

MBR120LSF, NRVB120LSF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
SOD−123FL
CASE 498
Features
•
•
•
•
•
•
•
•
Guardring for Stress Protection
Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Rating:
♦ Human Body Model = 3B
♦ Machine Model = C
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
•
L2LMG
G
L2L
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Mechanical Characteristics
•
•
•
•
•
MARKING DIAGRAM
Device Marking: L2L
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Package
Shipping†
MBR120LSFT1G
SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel **
NRVB120LSFT1G
SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel **
MBR120LSFT3G
SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
Device
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 4
1
Publication Order Number:
MBR120LSFT1/D
MBR120LSF, NRVB120LSF
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 115°C)
Symbol
Value
Unit
VRRM
VRWM
VR
20
V
IO
A
1.0
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 110°C)
IFRM
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
Storage Temperature
Tstg
−55 to 150
°C
Operating Junction Temperature
TJ
−55 to 125
°C
dv/dt
10,000
V/ms
2.0
A
50
Voltage Rate of Change (Rated VR, TJ = 25°C)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
Symbol
Value
Unit
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
VF
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
IR
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
(VR = 20 V)
(VR = 10 V)
Value
Unit
TJ = 25°C
TJ = 85°C
0.34
0.45
0.65
0.26
0.415
0.67
TJ = 25°C
TJ = 85°C
0.40
0.10
25
18
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
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2
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR120LSF, NRVB120LSF
10
TJ = 125°C
TJ = 85°C
1.0
TJ = 25°C
TJ = −40°C
0.1
0.1
0.3
0.5
0.7
0.9
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
TJ = 125°C
1.0
TJ = 85°C
TJ = 25°C
0.1
100E−6
TJ = 25°C
20
15
1.0E−3
TJ = 25°C
10E−6
0
5.0
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
freq = 20 kHz
dc
1.6
1.4
SQUARE
WAVE
1.2
1.0
Ipk/Io = p
0.8
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
45
TJ = 85°C
10E−3
PFO, AVERAGE POWER DISSIPATION (WATTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
10
1.8
25
1.0E+0
100E−6
1.0E−6
5.0
0.9
100E−3
TJ = 85°C
0
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
TJ = 125°C
10E−6
0.7
Figure 2. Maximum Forward Voltage
100E−3
1.0E−3
0.5
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 1. Typical Forward Voltage
10E−3
0.3
0.1
65
85
105
125
145
TL, LEAD TEMPERATURE (°C)
0.7
0.6
Ipk/Io = p
Ipk/Io = 5
0.5
SQUARE
WAVE
Ipk/Io = 10
0.4
Ipk/Io = 20
0.3
0.2
0.1
0
0
Figure 5. Current Derating
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
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3
dc
1.6
MBR120LSF, NRVB120LSF
1000
125
TJ, DERATED OPERATING
TEMPERATURE (°C)
C, CAPACITANCE (pF)
120
TJ = 25°C
100
10
0
2.0
4.0
6.0
8.0
10
12
14
16
18
115
RqJA = 25.6°C/W
110
105
100
95
90
130°C/W
85
80
235°C/W
324.9°C/W
75
70
65
400°C/W
0
20
2.0
4.0
6.0
8.0
10
12
14
16
18
VR, REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature
Derating*
20
r(t), TRANSIENT THERMAL RESISTANCE
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1000
D = 0.5
100
0.2
0.1
0.05
P(pk)
10
0.01
t1
t2
1
DUTY CYCLE, D = t1/t2
SINGLE PULSE
qJA = 321.8 °C/W
Test Type > Min Pad < Die Size 38x38 @ 75% mils
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
Figure 9. Thermal Response
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4
1
10
100
1000
MBR120LSF, NRVB120LSF
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
q
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
D
1
2
DIM
A
A1
b
c
D
E
L
HE
q
A1
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
END VIEW
TOP VIEW
q
HE
MILLIMETERS
NOM
MAX
0.95
0.98
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
c
RECOMMENDED
SOLDERING FOOTPRINT*
SIDE VIEW
2X
2X
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
L
b
2X
BOTTOM VIEW
1.22
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
4.20
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
2X
1.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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PUBLICATION ORDERING INFORMATION
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MBR120LSFT1/D