MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS SOD−123FL CASE 498 PLASTIC Features • • • • • • • • Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Rating: ♦ Human Body Model = 3B ♦ Machine Model = C NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* • Device Marking: L4F Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 5 L4FMG G L4F M G = Specific Device Code = Date Code = Pb−Free Package) (Note: Microdot may be in either location) ORDERING INFORMATION Mechanical Characteristics • • • • • MARKING DIAGRAM 1 Package Shipping† MBR140SFT1G SOD−123FL (Pb−Free) 3,000 / Tape & Reel ** NRVB140SFT1G SOD−123FL (Pb−Free) 3,000 / Tape & Reel ** MBR140SFT3G SOD−123FL (Pb−Free) 10,000 / Tape & Reel *** NRVB140SFT3G SOD−123FL (Pb−Free) 10,000 / Tape & Reel *** Device ** 8 mm Tape, 7” Reel *** 8 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBR140SFT1/D MBR140SF, NRVB140SF MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 112°C) Symbol Value Unit VRRM VRWM VR 40 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 95°C) IFRM Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM Storage Temperature Tstg −55 to 150 °C Operating Junction Temperature TJ −55 to 125 °C dv/dt 10,000 V/ms Voltage Rate of Change (Rated VR, TJ = 25°C) 2.0 30 A A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) Symbol Value Unit Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Characteristic Symbol VF Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 3), See Figure 4 (VR = 40 V) (VR = 20 V) 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 Value Unit TJ = 25°C TJ = 85°C 0.36 0.55 0.85 0.30 0.515 0.88 TJ = 25°C TJ = 85°C 0.5 0.15 25 18 V mA IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR140SF, NRVB140SF 100 10 TJ = 125°C 1.0 TJ = 85°C TJ = 25°C TJ = −40°C 0.1 0.1 0.3 0.5 0.7 0.9 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 1.0 TJ = 125°C TJ = 85°C 0.1 0.1 IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) TJ = 125°C TJ = 85°C TJ = 25°C 10E−6 0.9 1.0E+0 TJ = 85°C 10E−3 1.0E−3 TJ = 25°C 100E−6 1.0E−6 0 10 20 40 30 10E−6 0 10 VR, REVERSE VOLTAGE (VOLTS) freq = 20 kHz dc 1.6 1.4 SQUARE WAVE 1.2 1 Ipk/Io = p 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 45 55 65 75 85 95 30 40 Figure 4. Maximum Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) 1.8 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS) 0.7 100E−3 100E−6 25 35 0.5 Figure 2. Maximum Forward Voltage 100E−3 1.0E−3 0.3 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10E−3 TJ = 25°C 105 115 125 TL, LEAD TEMPERATURE (°C) 1.0 0.9 0.8 Ipk/Io = 10 0.7 Ipk/Io = p SQUARE Ipk/Io = 5 WAVE Ipk/Io = 20 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Figure 5. Current Derating 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation http://onsemi.com 3 dc 1.6 MBR140SF, NRVB140SF 125 TJ, DERATED OPERATING TEMPERATURE (°C) C, CAPACITANCE (pF) 1000 TJ = 25°C 100 10 0 5 10 15 20 30 25 35 130°C/W 105 324.9°C/W 95 85 235°C/W 75 65 55 40 RqJA = 25.6°C/W 115 0 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* 40 r(t), TRANSIENT THERMAL RESISTANCE * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax − r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1000 D = 0.5 100 0.2 0.1 0.05 10 P(pk) 0.01 t1 t2 1 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.001 0.01 0.1 t1, TIME (sec) Figure 9. Thermal Response http://onsemi.com 4 1 qJA = 321.8 °C/W 10 100 1000 MBR140SF, NRVB140SF PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. E q D DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A L b MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° MILLIMETERS NOM MAX 0.95 1.00 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° SOLDERING FOOTPRINT* ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ HE q c 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.22 0.048 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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