ONSEMI NRVB140SFT3G

MBR140SF, NRVB140SF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
SOD−123FL
CASE 498
PLASTIC
Features
•
•
•
•
•
•
•
•
Guardring for Stress Protection
Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Rating:
♦ Human Body Model = 3B
♦ Machine Model = C
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
•
Device Marking: L4F
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 5
L4FMG
G
L4F
M
G
= Specific Device Code
= Date Code
= Pb−Free Package)
(Note: Microdot may be in either location)
ORDERING INFORMATION
Mechanical Characteristics
•
•
•
•
•
MARKING DIAGRAM
1
Package
Shipping†
MBR140SFT1G
SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel **
NRVB140SFT1G
SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel **
MBR140SFT3G
SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
NRVB140SFT3G
SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
Device
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBR140SFT1/D
MBR140SF, NRVB140SF
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TL = 112°C)
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 95°C)
IFRM
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
Storage Temperature
Tstg
−55 to 150
°C
Operating Junction Temperature
TJ
−55 to 125
°C
dv/dt
10,000
V/ms
Voltage Rate of Change (Rated VR, TJ = 25°C)
2.0
30
A
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
Value
Unit
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
VF
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
IR
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
(VR = 40 V)
(VR = 20 V)
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
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2
Value
Unit
TJ = 25°C
TJ = 85°C
0.36
0.55
0.85
0.30
0.515
0.88
TJ = 25°C
TJ = 85°C
0.5
0.15
25
18
V
mA
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR140SF, NRVB140SF
100
10
TJ = 125°C
1.0
TJ = 85°C
TJ = 25°C
TJ = −40°C
0.1
0.1
0.3
0.5
0.7
0.9
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
TJ = 125°C
TJ = 85°C
0.1
0.1
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
TJ = 125°C
TJ = 85°C
TJ = 25°C
10E−6
0.9
1.0E+0
TJ = 85°C
10E−3
1.0E−3
TJ = 25°C
100E−6
1.0E−6
0
10
20
40
30
10E−6
0
10
VR, REVERSE VOLTAGE (VOLTS)
freq = 20 kHz
dc
1.6
1.4
SQUARE
WAVE
1.2
1
Ipk/Io = p
0.8
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
45
55
65
75
85
95
30
40
Figure 4. Maximum Reverse Current
PFO, AVERAGE POWER DISSIPATION (WATTS)
1.8
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
IO, AVERAGE FORWARD CURRENT (AMPS)
0.7
100E−3
100E−6
25 35
0.5
Figure 2. Maximum Forward Voltage
100E−3
1.0E−3
0.3
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 1. Typical Forward Voltage
10E−3
TJ = 25°C
105 115 125
TL, LEAD TEMPERATURE (°C)
1.0
0.9
0.8
Ipk/Io = 10
0.7
Ipk/Io = p SQUARE
Ipk/Io = 5
WAVE
Ipk/Io = 20
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Figure 5. Current Derating
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
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3
dc
1.6
MBR140SF, NRVB140SF
125
TJ, DERATED OPERATING
TEMPERATURE (°C)
C, CAPACITANCE (pF)
1000
TJ = 25°C
100
10
0
5
10
15
20
30
25
35
130°C/W
105
324.9°C/W
95
85
235°C/W
75
65
55
40
RqJA = 25.6°C/W
115
0
5
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature
Derating*
40
r(t), TRANSIENT THERMAL RESISTANCE
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ = TJmax − r(t)(Pf + Pr) where
TJ may be calculated from the equation:
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1000
D = 0.5
100
0.2
0.1
0.05
10
P(pk)
0.01
t1
t2
1
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.1
0.000001 0.00001
0.0001
Test Type > Min Pad < Die Size 38x38 @ 75% mils
0.001
0.01
0.1
t1, TIME (sec)
Figure 9. Thermal Response
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4
1
qJA = 321.8 °C/W
10
100
1000
MBR140SF, NRVB140SF
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF
THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
E
q
D
DIM
A
A1
b
c
D
E
L
HE
q
A1
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
b
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MILLIMETERS
NOM
MAX
0.95
1.00
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
SOLDERING FOOTPRINT*
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
HE
q
c
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
1.22
0.048
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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5
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
MBR140SFT1/D