MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS Features • • • • • • • Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C Human Body Model, 3B Pb−Free Packages are Available SOD−123FL CASE 498 PLASTIC MARKING DIAGRAM L2LMG G Mechanical Characteristics • Reel Options: MBR120LSFT1 = 3,000 per 7″ reel/8 mm tape • • • • • • MBR120LSFT3 = 10,000 per 13″ reel/8 mm tape Device Marking: L2L Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds L2L = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBR120LSFT1 Package Shipping † SOD−123FL 3000/Tape & Reel MBR120LSFT1G SOD−123FL 3000/Tape & Reel (Pb−Free) MBR120LSFT3 SOD−123FL 10000/Tape & Reel MBR120LSFT3G SOD−123FL 10000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. 2 1 Publication Order Number: MBR120LSFT1/D MBR120LSFT1 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 20 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 110°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg −55 to 150 °C Operating Junction Temperature TJ −55 to 125 °C dv/dt 10,000 V/ms Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 115°C) Voltage Rate of Change (Rated VR, TJ = 25°C) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) Symbol Value Unit Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 3), See Figure 4 (VR = 20 V) (VR = 10 V) 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 TJ = 25°C TJ = 85°C 0.34 0.45 0.65 0.26 0.415 0.67 TJ = 25°C TJ = 85°C 0.40 0.10 25 18 V mA IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR120LSFT1 10 TJ = 125°C TJ = 85°C 1.0 TJ = 25°C TJ = −40°C 0.1 0.3 0.1 0.5 0.7 0.9 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 125°C 1.0 TJ = 85°C TJ = 25°C 0.1 0.1 100E−6 TJ = 25°C TJ = 85°C 10E−3 1.0E−3 15 20 TJ = 25°C 10E−6 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current freq = 20 kHz dc 1.6 1.4 PFO, AVERAGE POWER DISSIPATION (WATTS) IO, AVERAGE FORWARD CURRENT (AMPS) 10 1.8 SQUARE WAVE 1.2 1.0 Ipk/Io = p 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 25 1.0E+0 100E−6 1.0E−6 5.0 0.9 100E−3 TJ = 85°C 0 IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) TJ = 125°C 10E−6 0.7 Figure 2. Maximum Forward Voltage 100E−3 1.0E−3 0.5 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10E−3 0.3 45 65 85 105 125 145 TL, LEAD TEMPERATURE (°C) 0.7 0.6 Ipk/Io = p Ipk/Io = 5 0.5 SQUARE WAVE Ipk/Io = 10 0.4 Ipk/Io = 20 0.3 0.2 0.1 0 0 Figure 5. Current Derating 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation http://onsemi.com 3 dc 1.6 MBR120LSFT1 125 TJ, DERATED OPERATING TEMPERATURE (°C) C, CAPACITANCE (pF) 1000 TJ = 25°C 100 10 0 2.0 4.0 6.0 8.0 10 12 14 16 18 120 115 RqJA = 25.6°C/W 110 105 100 95 90 130°C/W 85 80 235°C/W 324.9°C/W 75 70 65 20 400°C/W 0 2.0 4.0 6.0 8.0 10 12 14 16 18 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* 20 r(t), TRANSIENT THERMAL RESISTANCE * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 10 0.01 t1 t2 DUTY CYCLE, D = t1/t2 1 SINGLE PULSE qJA = 321.8 °C/W Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) Figure 9. Thermal Response http://onsemi.com 4 1 10 100 1000 MBR120LSFT1 PACKAGE DIMENSIONS SOD−123LF CASE 498−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. E q D DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A L b MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° MILLIMETERS NOM MAX 0.95 1.00 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − HE q c SOLDERING FOOTPRINT* ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.22 0.048 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° MBR120LSFT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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