C122F1G Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. http://onsemi.com Features SCRs 8 AMPERES RMS 50 VOLTS • Glass Passivated Junctions and Center Gate Fire for Greater • • • Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 50 Volts This is a Pb−Free Device* G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = 25 to 100°C, Sine Wave, 50 to 60 Hz; Gate Open) VDRM, VRRM 50 V On-State RMS Current (180° Conduction Angles; TC = 75°C) IT(RMS) 8.0 Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TC = 75°C) ITSM 4 A 90 1 34 A2s PGM 5.0 W PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width = 10 ms, TC = 70°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Forward Peak Gate Power (Pulse Width = 10 ms, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. A YW C122F1G AKA TO−220AB CASE 221A STYLE 3 A I2t Circuit Fusing Considerations (t = 8.3 ms) MARKING DIAGRAM 2 3 A Y W C122F1 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Device C122F1G Package TO220AB (Pb−Free) Shipping 500 Units / Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 May, 2011 − Rev. 4 1 Publication Order Number: C122F1/D C122F1G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 1.8 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W TL 260 °C Min Typ Max Unit − − − − 10 0.5 mA mA − − 1.83 V − − − − 25 40 − − − − 1.5 2.0 0.2 − − − − − − 30 60 Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TC = 25°C TC = 125°C IDRM, IRRM ON CHARACTERISTICS Peak On−State Voltage (Note 2) (ITM = 16 A Peak, TC = 25°C) Gate Trigger Current (Continuous dc) (VAK = 12 V, RL = 100 W) Gate Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 W) VTM TC = 25°C TC = −40°C TC = 25°C TC = −40°C Gate Non−Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 W, TC = 125°C) IGT VGT VGD mA V V Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25°C TC = −40°C IH mA Turn-Of f Time (VD = Rated VDRM) (ITM = 8 A, IR = 8 A) tq − 50 − ms dv/dt − 50 − V/ms DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of Off−State Voltage (VAK = Rated VDRM, Exponential Waveform, Gate Open, TC = 100°C) 2. Pulse Test: Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 C122F1G Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) Anode − 100 100 90 80 DC CONDUCTION ANGLE = 30° 70 60° 90° 120° 180° 0 360 CONDUCTION ANGLE 60 0 1 2 3 4 5 6 7 8 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPERES) CONDUCTION CONDUCTION ANGLE ANGLE 95 0 90 85 80 CONDUCTION ANGLE = 60° 75 70 TC , AVERAGE ON-STATE POWER DISSIPATION (WATTS) P(AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS) RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz DC 10 180° CONDUCTION ANGLE 30° 6 60° 90° 120° 4 2 0 0 1 2 3 4 5 6 7 180° 240° 360° 60 0 1 2 3 4 5 6 7 8 IT(AV), AVERAGE ON-STATE CURRENT (AMPERES) Figure 2. Current Derating (Full−Wave) 14 8 120° RESISTIVE OR INDUCTIVE LOAD. 50 TO 400 Hz 65 Figure 1. Current Derating (Half−Wave) 12 360 ONE CYCLE OF SUPPLY FREQUENCY 8 10 360° 240° 180° 8 120° CONDUCTION ANGLE = 60° 6 CONDUCTION CONDUCTION ANGLE ANGLE 4 0 360 ONE CYCLE OF SUPPLY FREQUENCY 2 RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz 0 0 1 2 3 4 5 6 7 IT(AV), AVERAGE ON-STATE CURRENT (AMPERES) IT(AV), AVERAGE ON-STATE CURRENT (AMPERES) Figure 3. Maximum Power Dissipation (Half−Wave) Figure 4. Maximum Power Dissipation (Full−Wave) http://onsemi.com 3 8 C122F1G PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA −T− B F 4 Q SEATING PLANE C T S A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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