MCR264−4, MCR264−6, MCR264−8 Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters • 400 Amperes Surge Capability • Blocking Voltage to 600 Volts • Device Marking: Logo, Device Type, e.g., MCR264−4, Date Code http://onsemi.com SCRs 40 AMPERES RMS 200 thru 600 VOLTS G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) A Rating Symbol Peak Repetitive Off−State Voltage(1) (TJ = *40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open) MCR264−4 MCR264−6 MCR264−8 VDRM, VRRM On-State RMS Current (TC = 80°C; 180° Conduction Angles) IT(RMS) 40 A Average On-State Current (TC = 80°C; 180° Conduction Angles) IT(AV) 25 A Peak Non-repetitive Surge Current (TC = 80°C) (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM Forward Peak Gate Power (Pulse Width ≤ 1.0 μs, TC = 80°C) PGM 20 Watts PG(AV) 0.5 Watt Forward Peak Gate Current (Pulse Width ≤ 1.0 μs, TC = 80°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Value Volts 4 200 400 600 August, 2006 − Rev. 3 1 A 450 3 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Device 1 2 TO−220AB CASE 221A STYLE 3 400 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. © Semiconductor Components Industries, LLC, 2006 K Unit Package Shipping MCR264−4 TO220AB 500/Box MCR264−6 TO220AB 500/Box MCR264−8 TO220AB 500/Box Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR264−4/D MCR264−4, MCR264−6, MCR264−8 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.0 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit — — — — 10 2.0 μA mA OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current TJ = 25°C (VAK = Rated VDRM or VRRM, Gate Open) TJ = 125°C IDRM , IRRM ON CHARACTERISTICS Peak Forward On−State Voltage(1) (ITM = 80 A) VTM — 1.4 2.0 Volts Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms, TC = − 40°C) IGT — — 15 30 50 90 mA Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) VGT — 1.0 1.5 Volts Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C) VGD 0.2 — — Volts Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) IH — 30 60 mA Turn-On Time (ITM = 40 A, IGT = 60 mAdc) tgt — 1.5 — μs dv/dt — 50 — V/μs DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. http://onsemi.com 2 MCR264−4, MCR264−6, MCR264−8 Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) 50 125 P(AV) , AVERAGE POWER (WATTS) TC, MAXIMUM CASE TEMPERATURE ( ° C) Anode − α α = CONDUCTION ANGLE 115 105 dc 95 α = 30° 85 75 60° 90° 0 5.0 10 15 40 35 60° dc 25 20 15 α α = CONDUCTIVE ANGLE 10 0 25 90° α = 30° 30 5.0 180° 20 180° 45 5.0 0 10 15 20 IT(AV), ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. Maximum On−State Power Dissipation http://onsemi.com 3 25 MCR264−4, MCR264−6, MCR264−8 1.1 VGT , GATE TRIGGER VOLTAGE (VOLTS) I GT , GATE TRIGGER CURRENT (mA) 40 OFF-STATE VOLTAGE = 12 V 20 10 7.0 5.0 −40 −20 0 20 40 60 80 100 120 IH , HOLDING CURRENT (mA) 0.8 0.7 0.6 0.5 −20 −40 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage 50 OFF-STATE VOLTAGE = 12 V 30 20 10 −40 −20 0 20 40 60 80 100 120 140 140 100 TJ = 25°C 10 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Forward Voltage Figure 5. Typical Holding Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 TJ, JUNCTION TEMPERATURE (°C) 70 7.0 −60 0.9 0.4 −60 140 IF , INSTANTANEOUS FORWARD CURRENT (AMPS) 4.0 −60 OFF-STATE VOLTAGE = 12 V 1.0 1.0 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 t, TIME (ms) Figure 7. Thermal Response http://onsemi.com 4 200 300 500 1k 2k 3k 5k 10 k MCR264−4, MCR264−6, MCR264−8 PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE Z −T− B F 4 Q T SEATING PLANE C S A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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