MCR68−2 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features http://onsemi.com • Glass-Passivated Junctions for Greater Parameter Stability and Reliability SCRs 12 AMPERES RMS 50 VOLTS • Center-Gate Geometry for Uniform Current Spreading Enabling • • • High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 300 Amps Pb−Free Package is Available* G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to +125°C, Gate Open) MCR68−2 VDRM, VRRM 50 ITM 300 A On-State RMS Current (180° Conduction Angles; TC = 85°C) IT(RMS) 12 A Average On-State Current (180° Conduction Angles; TC = 85°C) IT(AV) 8.0 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) ITSM 100 A Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s Forward Peak Gate Current (t ≤ 1.0 ms, TC = 85°C) IGM 2.0 A Forward Peak Gate Power (t ≤ 1.0 ms, TC = 85°C) PGM 20 W PG(AV) 0.5 W Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C − 8.0 in. lb. Peak Discharge Current (Note 2) Forward Average Gate Power (t = 8.3 ms, TC = 85°C) Mounting Torque Value Unit *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. December, 2005 − Rev. 2 AY WW MCR68−2G AKA 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. © Semiconductor Components Industries, LLC, 2005 MARKING DIAGRAM V 1 2 TO−220AB CASE 221A−07 STYLE 3 3 A Y WW G AKA = Assembly Location = Year = Work Week = Pb−Free Package = Diode Polarity PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Device Package Shipping MCR68−2 TO−220AB 500 Units / Box MCR68−2G TO−220AB (Pb−Free) 500 Units / Box Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR68/D MCR68−2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 2.0 mA mA − − − 6.0 2.2 − OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM, IRRM TJ = 25°C TJ = 125°C ON CHARACTERISTICS Peak Forward On-State Voltage (ITM = 24 A) (Note 3) (ITM = 300 A, tw = 1 ms) (Note 4) VTM V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) IGT 2.0 7.0 30 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) VGT − 0.65 1.5 V Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 W, TJ = 125°C) VGD 0.2 0.40 − V Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) IH 3.0 15 50 mA Latching Current (VD = 12 Vdc, IG = 150 mA) IL − − 60 mA Gate Controlled Turn-On Time (Note 5) (VD = Rated VDRM, IG = 150 mA) (ITM = 24 A Peak) tgt − 1.0 − ms Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125°C) dv/dt 10 − − V/ms Critical Rate-of-Rise of On-State Current IG = 150 mA di/dt − − 75 A/ms DYNAMIC CHARACTERISTICS TJ = 125°C 3. Pulse duration p 300 ms, duty cycle p 2%. 4. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. 5. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. http://onsemi.com 2 MCR68−2 Voltage Current Characteristic of SCR + Current Anode + VTM Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) I TM , PEAK DISCHARGE CURRENT (AMPS) Anode − NORMALIZED PEAK CURRENT 1000 300 200 ITM 50 tw tw = 5 time constants 20 0.5 1.0 2.0 0.6 0.4 0 5.0 10 20 25 50 50 75 100 tw, PULSE CURRENT DURATION (ms) TC, CASE TEMPERATURE (°C) Figure 1. Peak Capacitor Discharge Current Figure 2. Peak Capacitor Discharge Current Derating 125 TC , MAXIMUM CASE TEMPERATURE (° C) 0.8 0.2 P(AV) , AVERAGE POWER DISSIPATION (WATTS) 100 1.0 120 115 dc 110 105 100 Half Wave 95 90 85 80 75 1.0 2.0 5.0 8.0 20 18 Half Wave 14 dc 10 8.0 TJ = 125°C 4.0 2.0 1.0 10 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 3. Current Derating 2.0 4.0 5.0 8.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 4. Maximum Power Dissipation http://onsemi.com 3 125 10 r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED) MCR68−2 1 0.7 0.5 0.3 0.2 ZqJC(t) = RqJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10 k t, TIME (ms) 5.0 NORMALIZED GATE TRIGGER VOLTAGE 10 VD = 12 Volts RL = 100 W 3.0 2.0 1.0 0.5 0.3 0.2 −60 −40 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 1.4 1.0 0.8 0.5 −60 140 VD = 12 Volts RL = 100 W 1.2 −40 −20 0 20 2.0 VD = 12 Volts ITM = 100 mA 1.0 0.8 0.5 −40 −20 60 80 100 Figure 7. Gate Trigger Voltage 3.0 0.3 −60 40 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Gate Trigger Current NORMALIZED HOLD CURRENT NORMALIZED GATE TRIGGER CURRENT Figure 5. Thermal Response 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) Figure 8. Holding Current http://onsemi.com 4 100 120 140 120 140 MCR68−2 PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA −T− B F T SEATING PLANE C S 4 Q A 1 2 3 U H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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