NYC0102BLT1G Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for highly−sensitive triggering in low-power switching applications. http://onsemi.com Features • • • • • High dv/dt Gating Current < 200 mA Miniature SOT−23 Package for High Density PCB SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 0.25 AMP, 200 VOLT SCRs G A K MARKING DIAGRAM 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (RGK = IK, TJ = *40 to +110°C, Sine Wave, 50 to 60 Hz VDRM, VRRM On-State Current RMS (180° Conduction Angle, TC = 80°C) IT(RMS) 0.25 A Peak Non-repetitive Surge Current, TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) ITSM 7.0 A Circuit Fusing Considerations (t = 8.3 ms) I2t 0.2 A2s PGM 0.1 W PG(AV) 0.02 W Forward Peak Gate Current (Pulse Width ≤ 20 ms, TA = 25°C) IFGM 0.5 A Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TA = 25°C) VRGM 8.0 V Operating Junction Temperature Range @ Rated VRRM and VDRM TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Max Unit 225 mW 380 °C/W Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TA = 25°C) Forward Average Gate Power (t = 8.3 msec, TA = 25°C) Value Unit Total Device Dissipation FR− 5 Board TA = 25°C Thermal Resistance, Junction−to−Ambient July, 2014 − Rev. 2 SOT−23 CASE 318 STYLE 8 200 Symbol PD RqJA 1 C2B MG G 1 C2B = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. PIN ASSIGNMENT 1 Cathode 2 Gate 3 Anode ORDERING INFORMATION Package Shipping† NYC0102BLT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SZNYC0102BLT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2014 2 V THERMAL CHARACTERISTICS Characteristic 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NYC0102BL/D NYC0102BLT1G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 1.0 100 mA mA − − − − 1.0 100 mA mA OFF CHARACTERISTICS IDRM Peak Repetitive Forward Blocking Current (VDRM = 200 V, RGK = 1 kW) TC = 25°C TC = 125°C Peak Repetitive Reverse Blocking Current (VDRM = 200 V, RGK = 1 kW) IRRM TC = 25°C TC = 125°C ON CHARACTERISTICS Peak Forward On−State Voltage (ITM = 0.4 A, tp < 1 ms, TC = 25°C) VTM − − 1.7 V Gate Trigger Current (VD = 12 V, RL = 100 W, TC = 25°C) IGT − − 200 mA Gate Trigger Voltage (VD = 12 V, RL = 100 W, TC = 25°C) VGT − − 0.8 V Holding Current (IT = 50 mA, RGK = 1 kW, TC = 25°C) IH − − 6.0 mA Gate Non−Trigger Voltage (VD = VDRM , RL = 3.3 kW, TC = 125°C) VGD 0.1 − − V Latching Current (IG = 1.0 mA, RGK = 1 kW, TC = 25°C) IL − − 7.0 mA VRG 8.0 − − V Critical Rate of Rise of Off−State Voltage (RGK = 1 kW, TC = 125°C) dv/dt 200 − − V/ms Critical Rate of Rise of On−State Current (IG = 2xIGT 60 Hz, tr < 100 ns, TJ = 125°C) di/dt − − 50 A/ms Gate Reverse Voltage (IRG = 10 mA) DYNAMIC CHARACTERISTICS Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Anode + VTM on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − http://onsemi.com 2 IH + Voltage IDRM at VDRM Forward Blocking Region (off state) NYC0102BLT1G 0.3 IT, AVERAGE CURRENT (A) P, AVERAGE POWER (W) 0.25 0.2 0.15 0.1 0.05 0 DC 0.2 0.15 180° 0.1 0.05 0 0 0.05 0.1 0.15 0.2 0 50 150 IT, AVERAGE CURRENT (A) T, TEMPERATURE (°C) Figure 2. Current Derating 1 TRANSIENT RESISTANCE (NORMALIZED) 6 5 4 3 2 1 0 1 10 100 0.8 0.6 0.4 0.2 0 1.E−04 1.E−03 1.E−02 1.E−01 1.E+00 1.E+01 1.E+02 1.E+03 1000 NUMBER OF CYCLES PULSE DURATION (s) Figure 3. Surge Current ITSM vs. Number of Cycles Figure 4. Thermal Response 10 2 Gate Open 1.5 ITM, (A) 100 Figure 1. Maximum Average Power vs. Average Current 7 ITSM (A) 0.25 RGK = 1k 1 1 125°C 25°C 0.1 0 0.5 1 0.5 1.5 2 0 2.5 200 VTM, (V) 250 300 350 TJ, (K) Figure 5. ON−State Characteristics Figure 6. Gate Trigger Current vs. TJ (Normalized to 255C) http://onsemi.com 3 400 NYC0102BLT1G 0.07 2 0.06 Gate Open 0.05 IGT (mA) 1.5 RGK = 1k 1 0.04 0.03 0.02 0.5 0.01 0 200 250 300 350 0 400 0 2 4 6 8 10 TJ, (K) RGK, (kW) Figure 7. Gate Trigger Current vs. TJ (Normalized to 255C) Figure 8. Gate Trigger Current vs. RGK 25 12 2000 20 dV/dt (V/ms) 1500 10 0 1000 500 5.0 0 1 2 3 4 6 5 RGK, (kW) 7 8 9 0 0 10 2 Figure 9. Holding and Latching Current vs. RGK 4 0.80 0.60 0.40 0.20 0 200 250 6 RGK, (kW) 8 Figure 10. dV/dt vs. RGK 1.0 VGT (V) IH,IL (mA) 15 300 350 TJ, (K) Figure 11. Gate Triggering Voltage vs. TJ http://onsemi.com 4 400 10 12 NYC0102BLT1G PACKAGE DIMENSIONS SOT−23 (TO−236)] CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 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