MMBD2835LT1 D

MMBD2835LT1G,
MMBD2836LT1G,
SMMBD2835LT1G
Monolithic Dual Switching
Diodes
http://onsemi.com
Features
 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−23 (TO −236AB)
CASE 318 −08
STYLE 12
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
MMBD2835LT1G, SMMBD2835LT1G
MMBD2836LT1G
VR
Forward Current
IF
100
mAdc
PD
225
mW
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
−55 to
+150
C
CATHODE
1
ANODE
3
2
CATHODE
Vdc
35
75
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25C
Derate above 25C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25C
Derate above 25C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
xxx MG
G
1
xxx
= Specific Device Code
A3X = MMBD2835LT1G
SMMBD2835LT1G
A2X = MMBD2836LT1G
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBD2835LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMBD2835LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBD2836LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1
Publication Order Number:
MMBD2835LT1/D
MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Symbol
Characteristic
Min
Max
35
75
−
−
Unit
OFF CHARACTERISTICS
V(BR)
Reverse Breakdown Voltage (IR = 100 mAdc)
MMBD2835LT1G, SMMBD2835LT1G
MMBD2836LT1G
Reverse Voltage Leakage Current (Note 3)
(VR = 30 Vdc)
MMBD2835LT1G, SMMBD2835LT1G
(VR = 50 Vdc)
MMBD2836LT1G
IR
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CT
Forward Voltage
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 100 mAdc)
VF
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
Vdc
nAdc
−
100
−
100
−
4.0
pF
Vdc
−
−
−
1.0
1.0
1.2
−
4.0
ns
3. For each individual diode while the second diode is unbiased.
820W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G
CURVES APPLICABLE TO EACH CATHODE
100
10
I R , REVERSE CURRENT (m A)
TA = 85C
TA = -40C
10
TA = 25C
1.0
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
10
0
20
30
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.75
C D , DIODE CAPACITANCE (pF)
I F, FORWARD CURRENT (mA)
TA = 150C
1.50
1.25
1.00
0.75
0
2.0
4.0
6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8.0
40
50
MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Sales Representative
MMBD2835LT1/D