WINNERJOIN MMBD2836LT1

RoHS
MMBD2836LT1
MONOL LTHIC DUAL SWITCHING DIODE
SOT-23
A
3
L
ANODE-CATHODE
3
3
1
2
2
ANODE
1
G
Absolute Maximum Ratings
Characteristic
Reverse Voltage
V(BR)
Forward Current
IF
R
T
Total Device Dissipation FR-5
PD
o
Board(Note) Derate above 25 C
Junction Temperature
Storage Temperature
Tj
C
E
L
Electrical Characteristics
Parameter
O
C
D
IC
N
Symbol
S
C
2
CATHODE
V
Tstg
Rating
W
o
(Ta=25 C)
Unit
75
Vdc
100
nAdc
225
PF
mW/ C
O
1.8
O
150
O
-50~150
C
C
o
Symbol
E
MIN.
TYP. MAX. Unit
75
Vdc
Reverse Voltage Leakage Current
J
E
H
(Ta=25 C)
Reverse Breakdown Voltage(IR=100uAdc)
(VR=50Vdc)
J
K
B
1
D
T
,. L
O
100
Diode Capacitance(VR=0 f=1.0MHz)
4.0
Forward Voltage (IF=10mAdc)
1.0
(IF=50mAdc)
1.0
(IF=50mAdc)
0.2
Reverse Recovery Time(IF=IR=10mAdc)
4.0
nAdc
PF
Vdc
nS
Note:FR-5=1.0X0.75X0.062in
DVICE MARKING:
MMBD2836LT1=A2X
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
MMBD2836LT1
MONOL LTHIC DUAL SWITCHING DIODE
MMBD2835LT1 MMBD2836LT1
820
+10V
tP
IF
t
10%
2.0K
IF
100 H
0.1 F
90%
DUT
50 INPUT
PULSE
GEMERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
VR
IR
INPUT SIGNAL
D
T
,. L
O
IR;RECI=10nA
OUTPUT FULSE
(IF=lR=10mA;MEASURED
at iR(REC)=10mA)
Notes.1.A 2.0K
C
Variable resistor resistor adjusted for a Forward
Current(lF) of 1C nA
2.Input pulse is adjused so IR(peak) is equal to 10 mA.
IC
3.tp >> trr
Figure 1. Recovery Time Equivalent Test Circuit
100
N
10
IR,REVERSE CURRENT(uA)
IF,FORWARD CURRENT (mA)
CURVES APPLICABLE TO EACH CAHODE
o
T A =85 C
o
T A =85 C
R
T
10
o
T A =25 C
1.0
C
E
L
0.1
0.2
W
o
0.1
o
T A =55 C
0.01
o
T A =25 C
0.001
10
20
30
40
50
VR,REVERSE VOLTAGE(VOLTS)
Figure2 . Forward Voltage
J
E
o
T A =125 C
T A =85 C
0
0.4
0.6
0.8
1.0
1.2
VF,FCRWARD VOLTAGE(VOLTS)
E
O
1.0
o
T A =150 C
Figure3 . Leakage Current
1.75
1.50
1.25
1.00
0.75
0
WEJ ELECTRONIC CO.
2.0
4.0
6.0
Http:// www.wej.cn
8.0
E-mail:[email protected]