RoHS MMBD2836LT1 MONOL LTHIC DUAL SWITCHING DIODE SOT-23 A 3 L ANODE-CATHODE 3 3 1 2 2 ANODE 1 G Absolute Maximum Ratings Characteristic Reverse Voltage V(BR) Forward Current IF R T Total Device Dissipation FR-5 PD o Board(Note) Derate above 25 C Junction Temperature Storage Temperature Tj C E L Electrical Characteristics Parameter O C D IC N Symbol S C 2 CATHODE V Tstg Rating W o (Ta=25 C) Unit 75 Vdc 100 nAdc 225 PF mW/ C O 1.8 O 150 O -50~150 C C o Symbol E MIN. TYP. MAX. Unit 75 Vdc Reverse Voltage Leakage Current J E H (Ta=25 C) Reverse Breakdown Voltage(IR=100uAdc) (VR=50Vdc) J K B 1 D T ,. L O 100 Diode Capacitance(VR=0 f=1.0MHz) 4.0 Forward Voltage (IF=10mAdc) 1.0 (IF=50mAdc) 1.0 (IF=50mAdc) 0.2 Reverse Recovery Time(IF=IR=10mAdc) 4.0 nAdc PF Vdc nS Note:FR-5=1.0X0.75X0.062in DVICE MARKING: MMBD2836LT1=A2X WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBD2836LT1 MONOL LTHIC DUAL SWITCHING DIODE MMBD2835LT1 MMBD2836LT1 820 +10V tP IF t 10% 2.0K IF 100 H 0.1 F 90% DUT 50 INPUT PULSE GEMERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL D T ,. L O IR;RECI=10nA OUTPUT FULSE (IF=lR=10mA;MEASURED at iR(REC)=10mA) Notes.1.A 2.0K C Variable resistor resistor adjusted for a Forward Current(lF) of 1C nA 2.Input pulse is adjused so IR(peak) is equal to 10 mA. IC 3.tp >> trr Figure 1. Recovery Time Equivalent Test Circuit 100 N 10 IR,REVERSE CURRENT(uA) IF,FORWARD CURRENT (mA) CURVES APPLICABLE TO EACH CAHODE o T A =85 C o T A =85 C R T 10 o T A =25 C 1.0 C E L 0.1 0.2 W o 0.1 o T A =55 C 0.01 o T A =25 C 0.001 10 20 30 40 50 VR,REVERSE VOLTAGE(VOLTS) Figure2 . Forward Voltage J E o T A =125 C T A =85 C 0 0.4 0.6 0.8 1.0 1.2 VF,FCRWARD VOLTAGE(VOLTS) E O 1.0 o T A =150 C Figure3 . Leakage Current 1.75 1.50 1.25 1.00 0.75 0 WEJ ELECTRONIC CO. 2.0 4.0 6.0 Http:// www.wej.cn 8.0 E-mail:[email protected]