LA8630MC Monolithic Linear IC Low Voltage and Current Dissipation Compandor IC www.onsemi.com Applications Cordless telephone FM transceiver Functions Compressor (VCA circuit, full-wave rectifying circuit, adder amplifier) Expandor (VCA circuit, full-wave rectifying circuit, adder amplifier) Operational amplifier (in the compressor) Operational amplifier with muting function (in the expandor) Analog switch for data signal input (in the compressor) Regulator SOIC-16 Specifications Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Maximum supply voltage VCC max 8 Allowable power dissipation Pd max Operating temperature Topr 20 to +75 ºC Storage temperature Tstg 40 to +125 ºC Ta 75ºC 100 V mW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Operating Conditions at Ta = 25C Parameter Symbol Recommended supply voltage VCC Operating voltage range VCC op Conditions Ratings Unit 3 V 2.2 to 6.0 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2016 January 2016 - Rev. 0 1 Publication Order Number : LA8630MC/D LA8630MC Electrical Characteristics at Ta 25C, VCC = 3.0V, f = 1kHz, VIN = 100mVrms (0dB) Parameter Symbol Current drain ICC Input reference voltage VINref Conditions Ratings min typ With no signal input Unit max 2.5 3.7 100 mA mVrms [Expandor] (Operational amplifier gain: 0dB) Output level Vorefe VIN = 0dB (Operational amplifier gain: -6dB) 26.5 24.5 22.5 dBV Gain error Vgee1 VIN = +5dB 0.5 0 +0.5 dB Vgee2 VIN = 20dB 1.0 0 +1.0 dB 1.5 dB Vgee3 VIN = 30dB Distortion factor THDe VIN = 0dB Output noise voltage VNOe Frequency characteristic Maximum output voltage 0 +2.0 0.35 1.0 VIN = , Rg = 620Ω, f = 20 to 20000Hz 12 80 f VIN = 0dB, f = 200 to 3500Hz 0.0 dB VO max RL = 10kΩ, THD = 10% 0.6 1.0 Vrms VIN = 0dB 23 21 19 dBV % µVrms [Compressor] (Operational amplifier gain: 0dB) Output level Gain error Vorefc Vgec1 VIN = +20dB 0.5 0 +0.5 dB Vgec2 VIN = 20dB 0.5 0 +0.5 dB Vgec3 VIN = 40dB 1.0 0 +1.0 dB Distortion factor THDc VIN = 0dB 0.35 1.0 Output noise voltage VNOc VIN = , Rg = 620Ω, f = 20 to 20000Hz 0.3 0.7 Frequency characteristic f VIN = 0dB, f = 200 to 3500Hz 0.0 % mVrms dB [Muting circuit] (Operational amplifier gain: 0dB) Muting attenuation CT1 Threshold voltage Vthm VIN = 0dB, f = 1kHz 60 90 1.25 1.35 dB 1.45 V [Analog switch circuit] (operational amplifier gain: 0dB) Crosstalk Ct2 Threshold voltage Vtha VIN = 0dB, f = 1kHz 40 47 1.25 1.35 dB 1.45 V *: Be careful that the threshold voltage is determined by VCC (VTH = 0.45VCC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 LA8630MC Package Dimensions unit : mm SOIC-16 CASE 751B-05 ISSUE K 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 P 1 8 PL 0.25 (0.010) 8 M B S G R K F X 45 C SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0 7 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0 7 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N-CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P-CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P-CH SOURCE P-CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N-CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N-CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS www.onsemi.com 3 LA8630MC Equivalent circuit Block Diagram/Sample Application Circuit + + 15 + 16 0.1μF C6 4.7μF C8 14 13 SW2 SW3 C5 + 2.2μF C9 11 12 10 + 0.22μF C10 9 A-SW 10kΩ 30kΩ OP AMP 30kΩ - - VCA + 30kΩ RECTIFIER SUM AMP 34kΩ 50kΩ + 7.2kΩ REGULATOR + SUM AMP VCA 50kΩ 34kΩ RECTIFIER 50kΩ 50kΩ 50kΩ 30kΩ + 50kΩ 2 3 + + C1 1μF C2 3kΩ 2.2μF 4 R1 6 5 R2 C4 Pin Name 1 EXP. VIN 2 EXP. VREC 3 EXP. VOUT 4 OP. AMP NF (EXP.) 5 OP. AMP NF (COMP.) 6 VREF 7 GND 8 1/2VCC 9 VCC 10 MUTE CONT. 11 DATA CONT. 12 DATA IN 13 COMP. VOUT 14 COMP. NF 15 COMP. VREC 16 COMP. VIN Mode Pin 10 Pin 11 Audio signal Data Open Output - [Low] Mute - Open Output Mute [Low] Mute Output www.onsemi.com 4 8 C11 10μF Control Mode Name Pin No. 7 + 1 GND + 10kΩ OP AMP (WITH MUTE) 1μF VCC LA8630MC Test Circuit TP12 TP10 TP11 SW15 SW13 TP13 TP16 SW12 620Ω 200kΩ 2.2μF + + + 15 14 100μF 0.1μF + 16 2.2μF 4.7μF SW10 + 0.22μF SW11 620Ω 13 11 12 VCC + SW14 10 9 A-SW 10kΩ 30kΩ OP AMP 30kΩ - - VCA + 30kΩ RECTIFIER SUM AMP 34kΩ 50kΩ + 7.2kΩ REGULATOR + SUM AMP - VCA 50kΩ 34kΩ RECTIFIER 50kΩ 50kΩ 50kΩ 30kΩ + OP AMP (WITH MUTE) 50kΩ 2 3 6 5 + + + 1μF 4 2.2μF 2.2μF 7 8 + 1 3kΩ + 10kΩ GND 47kΩ 1μF 10μF 1kΩ SW1 620Ω 10kΩ 200kΩ SW3 SW3 SW3 TP1 SW2 SW7 SW3 SW8 TP3 Summary of Compandor (1) Operation VINC Expandor Compressor VINC K VOUTC VOUTE VINE < for example > VREF = 100mV K = IO 2 KVINE VINC = 1mV (-40dB) VINE = 10mV VOUTC = VINC / K VINE = VOUTC VOUTE = KVINE2 = K VOUTC = 1 1103 ≈ 10mV = -20dB 10 VOUTE = (1010-3)2 10 = 1mV = -40dB 1mV 10mV VINC = VINC K (-40dB) At reference level (VREF) VINC = VOUTC, VINE = VOUTE VINC < VREF Compressor → Amplifier VINE < VREF Expandor → Attenuator VINC > VREF Compressor →Attenuator VINE > VREF Expandor → Amplifier www.onsemi.com 5 1mV 10mV Expandor Compressor (-20dB) (-20dB) (-40dB) LA8630MC (2) Level Diagram COMPRESSOR IN EXPANDOR OUT +10dB +10dB +5dB 0dB 100mV 0dB 100mV 0dB -5dB -10dB -10dB -10dB -15dB -20dB -20dB -20dB -25dB -30dB -30dB -40dB -40dB -50dB -50dB COMPRESSIN EXPANSION (3) Block Diagram < Compressor > < Expandor > R1R2I1 VINC 2R3 VOUTC = VOUTE = = 10VINE2 1 V 10 IN = 2R3 V E2 R1R2I1 IN R2 VCA R1 CR R3 Vine RDC RDC R3 VCA Voute R1 CDC Vinc R2 + Voutc + VB(1/2VCC) www.onsemi.com 6 VB(1/2VCC) LA8630MC ICCO - VCC 3.2 ICCO -- Ta 2.8 No Signal Current, ICCO - mA No Signal Current, ICCO - mA VCC = 3V with no signal input 2.8 2.4 2.0 1.6 1.2 1 2 3 4 5 6 8 7 2.7 2.6 2.5 2.4 -40 9 -20 0 Compressor, Input/Output -20 Output level, - dBV 40 -30 -40 -50 -70 -60 -50 -40 -30 -23 VCC = 3V Operation Amp. Gain: 0dB VIN = -20dBV(1kHz) -20 0 -10 -24 -40 10 -20 0 Compressor, THD - Output level VCC = 3V Operation Amp. Gain: -6dB W/Filter (100kHz LPF) Output level, - dBV z 200H 1k -20 -30 -40 -50 -60 -70 VCC = 3V Operation Amp. NF Resistnce 47kΩ fIN = 1kHz Hz Hz 5k Total harmonic distortion, THD -- % 1.0 3 -80 2 -90 0.1 2 3 5 7 2 10 3 5 7 100 2 3 -100 -60 5 -50 -40 Output level - mVrms Total harmonic distortion, THD -- % Standard output, VEREF - dBV -26 VCC = 3V Operation Amp. Gain: -6dB VIN = -20dB (1kHz) -20 0 20 40 -10 0 Expandor, THD - Output level -25 -28 -40 -20 2 -24 -27 -30 Input level, - dBV Expandor, VEREF - Ta -23 80 0 2 5 60 -10 3 7 40 Expandor, Input/Output 10 10 5 20 Ambient temperature, Ta -- °C Input level, - dBV 7 100 -22 VCC = 3V f = 1kHz -90 -80 80 -21 -60 -70 -110 -100 60 VCREF -- Ta -20 Standard output, VCREF - dBV -10 20 Ambient temperature, Ta -- °C Supply Voltage, VCC - V 60 10 VCC = 3V RL = 10kΩ W/Filter (100kHz LPF) 7 5 3 2 1.0 200Hz 7 5 3 1kHz 2 5kH 80 0.1 2 3 Ambient temperature, Ta -- °C 5 7 10 2 3 5 7 100 z 2 Output level - mVrms www.onsemi.com 7 3 5 7 1000 2 LA8630MC Analog switch, CT - f Expandor Mute Circuit, CT - f 40 80 44 Crosstalk, CT - dB Crosstalk, CT - dB 84 VCC = 3V Operation Amp. NF Resistnce 47kΩ VIN = -15dBV 88 VCC = 3V VIN = -10dBV RG = 620Ω (Note) Little dependant on voltage 48 52 92 56 96 7 100 2 3 5 7 1k 3 2 5 7 10k 2 60 5 Frequency, f - Hz 7 100 2 3 5 7 1k 2 3 5 7 10k 2 3 Frequency, f - Hz ORDERING INFORMATION Device LA8630MC-AH Package Shipping (Qty / Packing) SOIC-16 (Pb-Free / Halogen Free) 2500 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . 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