Si4810BDY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFETS D Fast Switching Speed D Low Gate Charge APPLICATIONS D DC-DC Logic Level D Low Voltage and Battery Powered Applications SCHOTTKY PRODUCT SUMMARY VDS (V) Diode Forward Voltage VSD (V) IF (A) 30 0.53 V @ 3.0 A 3.8 D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 Ordering Information: Si4810BDY Si4810BDY-T1 (with Tape and Reel) Schottky Diode G N-Channel MOSFET Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Drain-Source Voltage (MOSFET) Gate-Source Voltage (MOSFET) TA = 70_C Pulsed Drain Current (MOSFET) Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (Schottky)a 30 V 7.5 10 8 IDM Continuous Source Current (MOSFET Diode Conduction)a Maximum Power Dissipation (MOSFET)a ID 6 50 IS 2.3 IF 3.8 IFM A 1.25 2.4 40 TA = 25_C 2.5 1.38 TA = 70_C 1.6 0.88 2.0 1.31 TA = 25_C PD TA = 70_C Operating Junction and Storage Temperature Range Unit "20 VGS TA = 25_C Steady State 30 VDS Reverse Voltage (Schottky) Continuous Drain Current (TJ = 150_C) (MOSFET)a 10 sec 1.3 TJ, Tstg W 0.84 _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambient (t v 10 sec)a Device Typical Maximum MOSFET 36 50 Schottky 44 60 73 90 77 95 17 21 24 30 MOSFET M i Maximum Junction-to-Ambient J ti t A bi t (t = steady t d state) t t )a Symbol RthJA Schottky MOSFET M i Maximum Junction-to-Foot J ti t F t (t = steady t d state) t t )a Schottky RthJF Unit _C/W Notes a. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72229 S-31063—Rev. A, 26-May-03 www.vishay.com 1 Si4810BDY New Product Vishay Siliconix MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1 Typ Max Unit 3 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current (MOSFET + Schottky) IDSS On-State Drain Currenta ID(on) VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V 0.007 0.100 VDS = 24 V, VGS = 0 V, TJ = 100_C 1.5 10 6.5 20 VGS = 10 V, ID = 10 A 0.0105 0.0135 VGS = 4.5 V, ID = 5 A 0.016 0.020 VDS = 24 V, VGS = 0 V, TJ = 125_C Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea rDS(on) gfs VSD VDS w 5 V, VGS = 10 V 20 mA A VDS = 15 V, ID = 10 A 25 IS = 3.0 A, VGS = 0 V 0.485 0.53 IS = 3.0 A, VGS = 0 V, TJ = 125_C 0.420 0.47 14.5 22 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.7 RG 0.55 td(on) 17 30 13 20 45 90 15 25 36 70 Gate Resistnce Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDS = 15 V, VGS = 5 V, ID = 10 A VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W IF = 3.0 A, di/dt = 100 A/ms 6.3 nC W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72229 S-31063—Rev. A, 26-May-03 Si4810BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 4V 20 10 30 20 TC = 125_C 10 25_C - 55_C 3V 0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 5 Capacitance 0.040 2500 0.032 2000 Ciss (MOSFET) C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 4 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.024 VGS = 4.5 V 0.016 VGS = 10 V 0.008 1500 1000 Coss (MOSFET + Schottky) 500 0.000 Crss (MOSFET) 0 0 10 20 30 40 50 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 6 1.6 VDS = 15 V ID = 10 A 5 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 3 4 3 2 VGS = 10 V ID = 10 A 1.4 1.2 1.0 0.8 1 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Document Number: 72229 S-31063—Rev. A, 26-May-03 15 18 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4810BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 50 10 TJ = 150_C TJ = 25_C 1 0.05 0.04 ID = 9.0 A 0.03 0.02 0.01 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Reverse Current (Schottky) Single Pulse Power 30 50 10 30 V Power (W) I R - Reverse Curent (mA) 40 1 0.1 10 V 30 20 0.01 20 V 10 0.001 0.0001 0 25 50 75 100 125 0 150 0.1 0.01 TJ - Temperature (_C) 10 1 100 1000 Time (sec) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 1s TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72229 S-31063—Rev. A, 26-May-03 Si4810BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 72229 S-31063—Rev. A, 26-May-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5