STMICROELECTRONICS STF10N65K3

STF10N65K3, STFI10N65K3,
STP10N65K3
N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3™
Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
Datasheet − production data
Features
Order codes
VDS
RDS(on)
max
PTOT
ID
3
STF10N65K3
STFI10N65K3
650 V
1Ω
35 W
10 A
STP10N65K3
1
2
TO-220FP
I2PAKFP
150 W
TAB
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Improved diode reverse recovery
characteristics
■
Zener-protected
3
1
2
TO-220
Figure 1.
Internal schematic diagram
'7$%
Applications
■
Switching applications
Description
*
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low onresistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1.
6
AM01476v1
Device summary
Order codes
Marking
Package
STF10N65K3
STFI10N65K3
TO-220FP
10N65K3
I2PAKFP
STP10N65K3
November 2012
This is information on a product in full production.
Packaging
Tube
TO-220
Doc ID 15732 Rev 3
1/17
www.st.com
17
Contents
STF10N65K3, STFI10N65K3, STP10N65K3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
.............................................. 9
Doc ID 15732 Rev 3
STF10N65K3, STFI10N65K3, STP10N65K3
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220FP
TO-220
I2PAKFP
VDS
Drain source voltage
650
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
10
A
ID
Drain current (continuous) at TC = 100 °C
6.3
A
IDM (1)
Drain current (pulsed)
40
A
PTOT
Total dissipation at TC = 25 °C
35
150
W
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
7.2
A
EAS
Single pulse avalanche energy (2)
212
mJ
Derating factor
dv/dt (3)
0.28
1.2
W/°C
Peak diode recovery voltage slope
12
V/ns
ESD
Gate-source human body model (R = 1.5 kΩ, C =
100 pF)
2.8
kV
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;TC=25 °C)
Tj
Tstg
Operating junction temperature
Storage temperature
2500
V
-55 to 150
°C
1. Pulse width limited by safe operating area.
2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V
3. ISD ≤ 10 A, di/dt = 100 A/µs, VPeak < V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220FP
TO-220
I2PAKFP
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Doc ID 15732 Rev 3
3.57
0.83
62.5
°C/W
°C/W
3/17
Electrical characteristics
2
STF10N65K3, STFI10N65K3, STP10N65K3
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
650
Unit
V
IDSS
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
±10
µA
4.5
V
0.75
1
Ω
Min.
Typ.
Max.
Unit
VGS = ± 20 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 100 µA
RDS(on)
Static drain-source onVGS = 10 V, ID = 3.6 A
resistance
Table 5.
Symbol
Ciss
Coss
Crss
Coss eq.
4/17
On /off states
3
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
1180
125
14
-
pF
pF
pF
Equivalent output
capacitance
VDS = 0 to 520 V, VGS = 0
-
77
-
pF
RG
Intrinsic gate resistnce f=1 MHz open drain
-
3
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
-
42
7.4
23
-
nC
nC
nC
VDD = 520 V, ID = 7.2 A,
VGS = 10 V
(see Figure 18)
Doc ID 15732 Rev 3
STF10N65K3, STFI10N65K3, STP10N65K3
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 7.
Electrical characteristics
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 310 V, ID = 3.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Typ.
-
14.5
14
44
35
Min.
Typ.
Max Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Min.
Test conditions
Max. Unit
-
7.2
28.8
A
A
ISD = 7 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100A/µs
VDD = 60 V (see Figure 22)
-
320
2
13
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
-
410
2.9
14
ns
µC
A
Min.
Typ.
30
-
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
V(BR)GSO
Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown
voltage
Igs=± 1 mA, ID=0
Max. Unit
-
V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Doc ID 15732 Rev 3
5/17
Electrical characteristics
STF10N65K3, STFI10N65K3, STP10N65K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
and I2PAKFP
Figure 3.
Thermal impedance for TO-220FP
and I2PAKFP
Figure 5.
Thermal impedance for TO-220
Figure 7.
Transfer characteristics
AM03922v1
ID
(A)
10
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10µs
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
0.01
0.1
Figure 4.
Sinlge
pulse
10
1
100
VDS(V)
Safe operating area for TO-220
AM15460v1
ID
(A)
1µs
10
ai
DS
(o
Op
Lim era
ite tion
d b in
y m this
ax ar
R e
n)
s
10µs
10µs
1
1ms
Tj=150°C
Tc=25°C
10ms
Sinlge
pulse
0.1
0.1
Figure 6.
10
1
100
VDS(V)
Output characteristics
AM03923v1
ID
(A)
18
16
14
7V
VGS=10V
12
10
8
6V
6
4
2
0
0
6/17
5V
10
20
VDS(V)
AM03924v1
ID
(A)
12
11
10
9
8
7
6
5
4
3
2
1
0
1
Doc ID 15732 Rev 3
VDS = 15 V
2
3
4
5
6
7
8
9
VGS(V)
STF10N65K3, STFI10N65K3, STP10N65K3
Figure 8.
Electrical characteristics
Normalized BVDSS vs temperature
AM03925v1
BVDSS
(norm)
Figure 9.
Static drain-source on resistance
AM03926v1
RDS(on)
(Ω)
0.95
VGS= 10 V
1.10
0.90
ID= 1 mA
0.85
1.05
0.80
1.00
0.75
0.70
0.95
0.65
0.90
-75 -50 -25 0
25 50 75 100 125 150 TJ(°C)
Figure 10. Output capacitance stored energy
AM03929v1
Eoss
(µJ)
8
0.60
0
1
2
3
4
5
6
7
ID(A)
Figure 11. Capacitance variations
AM03928v1
C
(pF)
1000
Ciss
7
6
100
5
Coss
4
3
Crss
10
2
1
0
0
Figure 12.
100
200
300
400
500
1
0.1
600 VDS(V)
1
10
100
VDS(V)
Gate charge vs gate-source voltage Figure 13. Normalized on-resistance vs
temperature
AM03927v1
VGS
(V)
12
AM03931v1
RDS(on)
(norm)
VDD=520V
VDS
(V)
ID=7A
500
2.5
400
2.0
300
1.5
200
1.0
100
0.5
ID= 1.2 A
10
8
6
4
2
0
0
10
20
30
40
0
50 Qg(nC)
Doc ID 15732 Rev 3
0.0
-50 -25 0 25 50 75 100 125 150 TJ(°C)
7/17
Electrical characteristics
STF10N65K3, STFI10N65K3, STP10N65K3
Figure 14. Normalized gate threshold voltage
vs temperature
AM03930v1
VGS(th)
(norm)
1.10
Figure 15. Maximum avalanche energy vs
temperature
200
180
1.00
160
140
0.90
120
100
80
0.80
60
40
0.70
-50 -25
0 25 50 75 100 125 150 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
AM03932v1
VSD
(V)
TJ=-50°C
0.9
0.8
TJ=25°C
0.7
TJ=150°C
0.6
0.5
0.4
8/17
ID=7.2 A
VDD=50 V
220
ID= 100 µA
0.3
0
AM03933v1
EAS
(mJ)
1
2
3
4
5
6
7
8
ISD(A)
Doc ID 15732 Rev 3
20
0
0
20
40
60
80
100 120 140 TJ(°C)
STF10N65K3, STFI10N65K3, STP10N65K3
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 21. Unclamped inductive waveform
AM01471v1
Figure 22. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 15732 Rev 3
10%
AM01473v1
9/17
Package mechanical data
4
STF10N65K3, STFI10N65K3, STP10N65K3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/17
Doc ID 15732 Rev 3
STF10N65K3, STFI10N65K3, STP10N65K3
Table 9.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Doc ID 15732 Rev 3
11/17
Package mechanical data
STF10N65K3, STFI10N65K3, STP10N65K3
Figure 23. TO-220FP drawing
7012510_Rev_K_B
12/17
Doc ID 15732 Rev 3
STF10N65K3, STFI10N65K3, STP10N65K3
Table 10.
Package mechanical data
I2PAKFP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
1.20
G
4.95
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.30
7.50
-
5.20
Figure 24. I2PAKFP drawing
REV!
Doc ID 15732 Rev 3
13/17
Package mechanical data
Table 11.
STF10N65K3, STFI10N65K3, STP10N65K3
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/17
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 15732 Rev 3
STF10N65K3, STFI10N65K3, STP10N65K3
Package mechanical data
Figure 25. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 15732 Rev 3
15/17
Revision history
5
STF10N65K3, STFI10N65K3, STP10N65K3
Revision history
Table 12.
Document revision history
Date
Revision
30-Jun-2009
1
First release
14-Nov-2011
2
Updated mechanical data and Section 2.1: Electrical characteristics
(curves).
Minor text changes.
3
–
–
–
–
–
14-Nov-2012
16/17
Changes
Added: I2PAKFP and TO-220
Deleted: TI row
Added: RDS(on) typical value, Figure 4 and 5
Modified: Figure 2
Updated: Section 4: Package mechanical data
Doc ID 15732 Rev 3
STF10N65K3, STFI10N65K3, STP10N65K3
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Doc ID 15732 Rev 3
17/17