MC100EPT24 3.3V LVTTL/LVCMOS to Differential LVECL Translator Description The MC100EPT24 is a LVTTL/LVCMOS to differential LVECL translator. Because LVECL levels and LVTTL/LVCMOS levels are used, a −3.3 V, +3.3 V and ground are required. The small outline 8−lead package and the single gate of the EPT24 makes it ideal for those applications where space, performance, and low power are at a premium. 8 350 ps Typical Propagation Delay Maximum Input Clock Frequency > 1.0 GHz Typical The 100 Series Contains Temperature Compensation Operating Range: VCC = 3.0 V to 3.6 V; VEE = −3.6 V to −3.0 V; GND = 0 V PNP LVTTL Input for Minimal Loading Q Output will Default HIGH with Input Open Pb−Free Packages are Available 1 SOIC−8 D SUFFIX CASE 751 KPT24 ALYW G 1 8 8 1 TSSOP−8 DT SUFFIX CASE 948R 1 KA24 ALYWG G DFN8 MN SUFFIX CASE 506AA 3U MG G • • • MARKING DIAGRAMS* 8 Features • • • • http://onsemi.com 1 A L Y W M G 4 = Assembly Location = Wafer Lot = Year = Work Week = Date Code = Pb−Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 9 1 Publication Order Number: MC100EPT24/D MC100EPT24 Table 1. PIN DESCRIPTION VEE D 1 2 8 LVTTL VCC 7 PIN Q LVECL NC NC 3 Q 6 4 5 FUNCTION Q, Q Differential LVECL Outputs D LVTTL Input VCC Positive Supply GND Ground VEE Negative Supply NC No Connect EP (DFN8 only) Thermal exposed pad must be connected to a sufficient thermal conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open. GND Figure 1. 8−Lead Pinout (Top View) and Logic Diagram Table 2. ATTRIBUTES Characteristics Value Internal Input Pulldown Resistor N/A Internal Input Pullup Resistor ESD Protection N/A Human Body Model Machine Model Charged Device Model Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) SOIC−8 TSSOP−8 DFN8 Flammability Rating Oxygen Index: 28 to 34 Transistor Count > 4 kV > 200 V > 2 kV Pb Pkg Pb−Free Pkg Level 1 Level 1 Level 1 Level 1 Level 3 Level 1 UL 94 V−0 @ 0.125 in 181 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. http://onsemi.com 2 MC100EPT24 Table 3. MAXIMUM RATINGS Symbol Rating Unit VCC Positive Power Supply Parameter GND = 0 V Condition 1 VEE = −3.3V Condition 2 3.8 V VEE Negative Power Supply GND = 0 V VCC = 3.3V −3.8 V VIN Input Voltage GND = 0 V VI v VCC 0 to VCC V Iout Output Current Continuous Surge 50 100 mA mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm SOIC−8 SOIC−8 190 130 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board SOIC−8 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm TSSOP−8 TSSOP−8 185 140 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board TSSOP−8 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm DFN8 DFN8 129 84 °C/W °C/W Tsol Wave Solder 265 265 °C qJC Thermal Resistance (Junction−to−Case) 35 to 40 °C/W Pb Pb−Free (Note 2) DFN8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) Table 4. LVTTL INPUT DC CHARACTERISTICS VCC = 3.3 V, VEE = −3.6 V to −3.0 V, GND = 0.0 V; TA = −40°C to 85°C Symbol Characteristic Condition Min Typ Max Unit 20 mA IIH Input HIGH Current VIN = 2.7 V IIHH Input HIGH Current HIGH Voltage VCC = VIN = 3.8 V 100 mA IIL Input LOW Current VIN = 0.5 V −0.6 mA VIK Input Clamp Voltage IIN = −18 mA −1.0 V VIH Input HIGH Voltage VIL Input LOW Voltage 2.0 V 0.8 V NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. Table 5. NECL OUTPUT DC CHARACTERISTICS VCC = 3.3 V, VEE = −3.3 V, GND = 0.0 V (Note 3) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit VOH Output HIGH Voltage (Note 4) -1145 −1020 -895 -1145 −1020 -895 -1145 −1030 -895 mV VOL Output LOW Voltage (Note 4) -1945 −1820 -1695 -1945 −1820 -1695 -1945 −1820 -1695 mV ICC Positive Power Supply Current 2.0 4.0 2.0 4.0 2.0 4.0 mA IEE Negative Power Supply Current 30 38 30 38 30 38 mA 20 20 20 NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Output levels will vary 1:1 with GND. VEE can vary ± 0.3 V. 4. Outputs are terminated through a 50 W resistor to GND − 2 V. http://onsemi.com 3 MC100EPT24 Table 6. AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 5) −40°C Min Characteristic Symbol fmax Maximum Input Clock Frequency (Figure 2) tPLH, tPHL Propagation Delay to Output Differential (Note 6) tJITTER RMS Random Clock Jitter (Figure 2) tr tf Output Rise/Fall Times (20% − 80%) @ 50 MHz Typ 25°C Max Min >1 300 Q, Q 70 Typ 85°C Max Min Typ >1 500 800 0.2 <1 125 170 300 80 Max >1 530 800 0.2 <1 130 180 300 100 Unit GHz 560 800 ps 0.2 <1 ps 150 200 ps 900 9 800 8 700 7 600 6 500 5 400 4 300 3 RMS RANDOM CLOCK JITTER (ps) OUTPUT VOLTAGE AMPLITUDE (mV) NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 5. Measured using a LVTTL source, 50% duty cycle clock source. All loading with 50 W to GND − 2.0 V. 6. Specifications for standard TTL input signal. ÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ 2 200 (JITTER) 100 1 0 100 300 500 700 900 1100 1300 INPUT CLOCK FREQUENCY (MHz) Figure 2. Output Voltage Amplitude (VOUTpp)/RMS Jitter vs. Input Clock Frequency at Ambient Temperature Q Zo = 50 W D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VCC − 2.0 V Figure 3. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices.) http://onsemi.com 4 MC100EPT24 ORDERING INFORMATION Package Shipping† SOIC−8 98 Units / Rail MC100EPT24DG SOIC−8 (Pb−Free) 98 Units / Rail MC100EPT24DR2 SOIC−8 2500 / Tape & Reel MC100EPT24DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel MC100EPT24DT TSSOP−8 100 Units / Rail MC100EPT24DTG TSSOP−8 (Pb−Free) 100 Units / Rail MC100EPT24DTR2 TSSOP−8 2500 / Tape & Reel MC100EPT24DTR2G TSSOP−8 (Pb−Free) 2500 / Tape & Reel MC100EPT24MNR4 DFN8 1000 / Tape & Reel DFN8 (Pb−Free) 1000 / Tape & Reel Device MC100EPT24D MC100EPT24MNR4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPSt I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1672/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices http://onsemi.com 5 MC100EPT24 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AH −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 MC100EPT24 PACKAGE DIMENSIONS TSSOP−8 DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948R−02 ISSUE A 8x 0.15 (0.006) T U 0.10 (0.004) S 2X L/2 L 8 5 1 PIN 1 IDENT 0.15 (0.006) T U K REF M T U V S 0.25 (0.010) B −U− 4 M A −V− S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D −W− G DETAIL E http://onsemi.com 7 DIM A B C D F G K L M MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 0.80 1.10 0.05 0.15 0.40 0.70 0.65 BSC 0.25 0.40 4.90 BSC 0_ 6_ INCHES MIN MAX 0.114 0.122 0.114 0.122 0.031 0.043 0.002 0.006 0.016 0.028 0.026 BSC 0.010 0.016 0.193 BSC 0_ 6_ MC100EPT24 PACKAGE DIMENSIONS DFN8 CASE 506AA−01 ISSUE D D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ TOP VIEW 0.08 C SEATING PLANE MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.20 0.30 2.00 BSC 1.10 1.30 2.00 BSC 0.70 0.90 0.50 BSC 0.20 −−− 0.25 0.35 A 0.10 C 8X DIM A A1 A3 b D D2 E E2 e K L E (A3) SIDE VIEW A1 C D2 e e/2 4 1 8X L E2 K 8 5 8X b 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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