MC100EPT25 -3.3V / -5V Differential ECL to +3.3V LVTTL Translator Description The MC100EPT25 is a Differential ECL to LVTTL translator. This device requires +3.3 V, −3.3 V to −5.2 V, and ground. The small outline 8−lead package and the single gate of the EPT25 make it ideal for applications which require the translation of a clock or data signal. The VBB output allows the EPT25 to also be used in a single−ended input mode. In this mode the VBB output is tied to the D input for a inverting buffer or the D input for a non−inverting buffer. If used, the VBB pin should be bypassed to ground with at least a 0.01 mF capacitor. Features • 1.1 ns Typical Propagation Delay • Maximum Frequency > 275 MHz Typical • Operating Range: VCC = 3.0 V to 3.6 V; MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VEE = −5.5 V to −3.0 V; GND = 0 V 24 mA TTL Outputs Q Output Will Default LOW with Inputs Open or at VEE VBB Output Open Input Default State Safety Clamp on Inputs Pb−Free Packages are Available KPT25 ALYW G TSSOP−8 DT SUFFIX CASE 948R 1 KA25 ALYWG G 3V MG G • • • • • • http://onsemi.com DFN8 MN SUFFIX CASE 506AA A L Y W M G 1 4 = Assembly Location = Wafer Lot = Year = Work Week = Date Code = Pb−Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 16 1 Publication Order Number: MC100EPT25/D MC100EPT25 Table 1. PIN DESCRIPTION VEE D D 1 8 LVTTL 2 3 7 6 VCC PIN Q NC LVECL/ECL VBB 4 5 GND Figure 1. 8−Lead Pinout (Top View) and Logic Diagram FUNCTION Q LVTTL Output D*, D* Differential ECL Input Pair VCC Positive Supply VBB Output Reference Voltage GND Ground VEE Negative Supply NC No Connect EP (DFN8 only) Thermal exposed pad must be connected to a sufficient thermal conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open. * Pins will default LOW when left open. Table 2. ATTRIBUTES Characteristics Value Internal Input Pulldown Resistor 75 kW Internal Input Pullup Resistor ESD Protection N/A Human Body Model Machine Model Charged Device Model Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) SOIC−8 TSSOP−8 DFN8 Flammability Rating Oxygen Index: 28 to 34 Transistor Count > 4 kV > 200 V > 2 kV Pb Pkg Pb−Free Pkg Level 1 Level 1 Level 1 Level 1 Level 3 Level 1 UL−94 V−0 @ 0.125 in 111 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. http://onsemi.com 2 MC100EPT25 Table 3. MAXIMUM RATINGS Rating Unit VCC Symbol Positive Power Supply Parameter GND = 0 V Condition 1 VEE = −5.0 V 3.8 V VEE Negative Power Supply GND = 0 V VCC = +3.3 V −6 V VIN Input Voltage GND = 0 V 0 to VEE V IBB VBB Sink/Source ± 0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 8 SOIC 8 SOIC 190 130 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 8 SOIC 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 8 TSSOP 8 TSSOP 185 140 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 8 TSSOP 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm DFN8 DFN8 129 84 °C/W °C/W Tsol Wave Solder <2 to 3 sec @ 248°C <2 to 3 sec @ 260°C 265 265 °C qJC Thermal Resistance (Junction−to−Case) 35 to 40 °C/W Pb Pb−Free Condition 2 (Note 2) DFN8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) Table 4. NECL DC CHARACTERISTICS VCC = 3.3 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V (Note 3) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 8.0 16 25 8.0 16 25 8.0 16 25 mA −880 −1225 −880 −1225 −880 mV −1625 −1945 −1625 −1945 −1625 mV −1325 −1525 −1325 −1525 −1325 mV 0.0 V 150 mA IEE Power Supply Current VIH Input HIGH Voltage Single−Ended −1225 VIL Input LOW Voltage Single−Ended −1945 VBB Output Voltage Reference −1525 VIHCMR Input HIGH Voltage Common Mode Range (Note 4) IIH Input HIGH Current IIL Input LOW Current −1425 VEE + 2.0 0.0 VEE + 2.0 150 0.5 −1425 0.0 VEE + 2.0 150 0.5 −1425 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Input parameters vary 1:1 with GND. 4. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. http://onsemi.com 3 MC100EPT25 Table 5. TTL OUTPUT DC CHARACTERISTICS VCC = 3.3 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V; TA = −40°C to 85°C Symbol Characteristic Condition Min VOH Output HIGH Voltage IOH = −3.0 mA VOL Output LOW Voltage IOL = 24 mA ICCH Power Supply Current 6 ICCL Power Supply Current 7 Typ Max 2.2 Unit V 0.5 V 10 14 mA 12 17 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. Table 6. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V (Note 5) −40°C Min Characteristic Symbol fmax Maximum Frequency (See Figure 2 Fmax/JITTER) 275 tPLH, tPHL Propagation Delay to Output Differential (Cross−Point to 1.5 V) 500 tSKPP Device−to−Device Skew (Note 6) tJITTER Random Clock Jitter (RMS) (See Figure 2 Fmax/JITTER) VPP Input Voltage Swing (Differential) tr tf Output Rise/Fall Times (0.8 V − 2.0 V) Typ 25°C Max Min Typ Max 275 950 1300 800 0.2 <1 150 800 1200 300 900 474 1160 600 1400 Min Typ Max 275 950 500 Q, Q 85°C 1600 Unit MHz 800 960 1600 ps 500 ps 0.2 <1 ps 500 0.2 <1 150 800 1200 150 800 1200 mV 300 900 459 1100 600 1400 300 900 457 1100 600 1400 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 5. Measured with a 750 mV 50% duty−cycle clock source. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 3. 6. Skews are measured between outputs under identical conditions. 7 2800 VOH 6 2000 5 1600 4 1200 3 VOL 0.5 V 2 800 400 0 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ (JITTER) 25 100 175 250 325 400 FREQUENCY (MHz) Figure 2. Fmax/Jitter http://onsemi.com 4 475 550 1 625 JITTEROUT ps (RMS) VOUTpp (mV) 2400 É É É MC100EPT25 APPLICATION TTL RECEIVER CHARACTERISTIC TEST *CL includes fixture capacitance CL * RL AC TEST LOAD GND Figure 3. TTL Output Loading Used for Device Evaluation ORDERING INFORMATION Device MC100EPT25D Package Shipping† SOIC−8 98 Units / Rail MC100EPT25DG SOIC−8 (Pb−Free) 98 Units / Rail MC100EPT25DR2 SOIC−8 2500 / Tape & Reel MC100EPT25DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel MC100EPT25DT TSSOP−8 100 Units / Rail MC100EPT25DTG TSSOP−8 (Pb−Free) 100 Units / Rail MC100EPT25DTR2 TSSOP−8 2500 / Tape & Reel MC100EPT25DTR2G TSSOP−8 (Pb−Free) 2500 / Tape & Reel MC100EPT25MNR4 DFN8 1000 / Tape & Reel DFN8 (Pb−Free) 1000 / Tape & Reel MC100EPT25MNR4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPSt I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1672/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices http://onsemi.com 5 MC100EPT25 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AJ −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 MC100EPT25 PACKAGE DIMENSIONS TSSOP−8 DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948R−02 ISSUE A 8x 0.15 (0.006) T U 0.10 (0.004) S 2X L/2 L 8 5 1 PIN 1 IDENT 0.15 (0.006) T U K REF M T U V S 0.25 (0.010) B −U− 4 M A −V− S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D −W− G DETAIL E http://onsemi.com 7 DIM A B C D F G K L M MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 0.80 1.10 0.05 0.15 0.40 0.70 0.65 BSC 0.25 0.40 4.90 BSC 0_ 6_ INCHES MIN MAX 0.114 0.122 0.114 0.122 0.031 0.043 0.002 0.006 0.016 0.028 0.026 BSC 0.010 0.016 0.193 BSC 0_ 6_ MC100EPT25 PACKAGE DIMENSIONS DFN8 CASE 506AA−01 ISSUE D D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ TOP VIEW 0.08 C SEATING PLANE MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.20 0.30 2.00 BSC 1.10 1.30 2.00 BSC 0.70 0.90 0.50 BSC 0.20 −−− 0.25 0.35 A 0.10 C 8X DIM A A1 A3 b D D2 E E2 e K L E (A3) SIDE VIEW A1 C D2 e e/2 4 1 8X L E2 K 8 5 8X b 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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