NLSX3378 4-Bit 20 Mb/s Dual-Supply Level Translator The NLSX3378 is a 4−bit configurable dual−supply bidirectional auto sensing translator that does not require a directional control pin. The VCC I/O and VL I/O ports are designed to track two different power supply rails, VCC and VL respectively. The VCC supply rail is configurable from 1.65 V to 4.5 V while VL supply rail is configurable to 1.2 V to 4.1 V. This allows lower voltage logic signals on the VL side to be translated into higher voltage logic signals on the VCC side, and vice−versa. The NLSX3378 translator has open−drain outputs with integrated 10 kW pullup resistors on the I/O lines. The integrated pullup resistors are used to pullup the I/O lines to either VL or VCC. The NLSX3378 is an excellent match for open−drain applications such as the I2C communication bus. www.onsemi.com MARKING DIAGRAM for NLSX3378FCT1G S3378F AYWW G mBump12 FC SUFFIX CASE 499AU Features • Wide High−Side VCC Operating Range: 1.65 V to 4.5 V • • • • • • • Wide Low−Side VL Operating Range: 1.2 V to 4.1 V High−Speed with 20 Mb/s Guaranteed Date Rate for VL > 2.5 V Low Bit−to−Bit Skew Enable Input and I/O Lines have Overvoltage Tolerant (OVT) to 4.5 V Nonpreferential Powerup Sequencing Integrated 10 kW Pullup Resistors Small Space Saving Package − 2.02 x 1.54 mm mBump12 This is a Pb−Free Device A Y WW G for NLSX3378BFCT1G S3378B AYWW G = Assembly Location = Year = Work Week = Pb−Free Package LOGIC DIAGRAM EN VL VCC GND I/O VL1 I/O VCC1 I/O VL2 I/O VCC2 I/O VL3 I/O VCC3 I/O VL4 I/O VCC4 Typical Applications • I2C, SMBus, PMBus • Low Voltage ASIC Level Translation • Mobile Phones, PDAs, Cameras Important Information • ESD Protection for Power, Enable and I/O Pins: Human Body Model (HBM): ±2 kV ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 6 1 Publication Order Number: NLSX3378/D NLSX3378 VL VCC One−Shot Block PU1 One−Shot Block PU2 Gate Bias RPullup 10 kW RPullup 10 kW I/O VL I/O VCC N Figure 1. Block Diagram (1 I/O Line) PIN ASSIGNMENT PIN LOCATION Pins Description Pin Pin Name VCC VCC Input Voltage A1 I/O VL1 VL VL Input Voltage A2 I/O VL2 GND Ground A3 I/O VL3 EN Output Enable A4 I/O VL4 I/O VCCn VCC I/O Port, Referenced to VCC B1 VCC I/O VLn VL I/O Port, Referenced to VL B2 VL B3 EN FUNCTION TABLE EN Operating Mode B4 GND L Hi−Z C1 I/O VCC1 I/O Buses Connected C2 I/O VCC2 C3 I/O VCC3 C4 I/O VCC4 H mBump12 (2.02 x 1.54 mm) A B C I/O VL1 VCC I/O VCC1 I/O VL2 VL I/O VCC2 I/O VL3 EN I/O VCC3 I/O VL4 GND I/O VCC4 1 2 3 4 (Bottom View) www.onsemi.com 2 NLSX3378 MAXIMUM RATINGS Symbol Parameter Value Condition Unit VCC High−side DC Supply Voltage −0.3 to +7.0 V VL High−side DC Supply Voltage −0.3 to +7.0 V −0.3 to (VCC + 0.3) V −0.3 to (VL + 0.3) V −0.3 to +7.0 V I/O VCC I/O VL VEN II/O_SC TSTG VCC−Referenced DC Input/Output Voltage VL−Referenced DC Input/Output Voltage Enable Control Pin DC Input Voltage Short−Circuit Duration (I/O VL and I/O VCC to GND) 40 Storage Temperature Continuous mA °C −65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC High−side Positive DC Supply Voltage 1.65 4.5 V VL High−side Positive DC Supply Voltage 1.2 4.1 V VEN Enable Control Pin Voltage GND 4.5 V VIO Enable Control Pin Voltage GND 4.5 V TA Operating Temperature Range −40 +85 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS (VCC = 1.65 V to 4.5 V and VL = 1.2 V to 4.1 V, unless otherwise specified) −405C to +855C Symbol Parameter Test Conditions Min Typ (Notes 1, 2) Max Unit VIHC I/O VCC Input HIGH Voltage VCC − 0.4 − − V VILC I/O VCC Input LOW Voltage − − 0.15 V VIHL I/O VL Input HIGH Voltage VL − 0.2 − − V VILL I/O VL Input LOW Voltage − − 0.15 V VIH Control Pin Input HIGH Voltage VL − 0.2 − − V VIL Control Pin Input LOW Voltage − − 0.15 V VOHC I/O VCC Output HIGH Voltage I/O VCC Source Current = 20 mA 2/3 * VCC − − V VOLC I/O VCC Output LOW Voltage I/O VCC Sink Current = 20 mA − − 1/3 * VCC V VOHL I/O VL Output HIGH Voltage I/O VL Source Current = 20 mA 2/3 * VL − − V VOLL I/O VL Output LOW Voltage I/O VL Sink Current = 20 mA − − 1/3 * VL V IQVCC VCC Supply Current I/O VCC and I/O VL Unconnected, VEN = VL − 50 105 mA VL Supply Current I/O VCC and I/O VL Unconnected, VEN = VL − 0.1 1.0 mA VCC Tristate Output Mode Supply Current I/O VCC and I/O VL Unconnected, VEN = GND − 0.1 2.5 mA VL Tristate Output Mode Supply Current I/O VCC and I/O VL Unconnected, VEN = GND − 0.1 2.5 mA IQVL ITS−VCC ITS−VL IOZ I/O Tristate Output Mode Leakage Current TA = +25°C − − 1.0 mA RPU Pullup Resistor I/O VL and VCC TA = +25°C − 10 − kW 1. Typical values are for VCC = +2.8 V, VL = +1.8 V and TA = +25°C. 2. All units are production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NLSX3378 TIMING CHARACTERISTICS − RAIL−TO−RAIL DRIVING CONFIGURATIONS (I/O test circuit of Figures 2 and 3, CLOAD = 15 pF, driver output impedance v 50 W, RLOAD = 1 MW) −405C to +855C (Note 3) Symbol Parameter Test Conditions Min Typ Max Unit +1.2 v VL v VCC v +4.5 V tRVCC I/O VCC Risetime 25 ns tFVCC I/O VCC Falltime 37 ns tRVL I/O VL Risetime 30 ns tFVL I/O VL Falltime 30 ns tPDVL−VCC Propagation Delay (Driving I/O VL) 30 ns tPDVCC−VL Propagation Delay (Driving I/O VCC) 30 ns Part−to−Part Skew 20 nS tPPSKEW MDR Maximum Data Rate 8 Mb/s +1.2 v VL v VCC v +3.3 V tRVCC I/O VCC Risetime 25 ns tFVCC I/O VCC Falltime 30 ns tRVL I/O VL Risetime 30 ns tFVL I/O VL Falltime 30 ns tPDVL−VCC Propagation Delay (Driving I/O VL) 20 ns tPDVCC−VL Propagation Delay (Driving I/O VCC) 20 ns Part−to−Part Skew 10 nS tPPSKEW MDR Maximum Data Rate 10 Mb/s +1.8 v VL v VCC v +2.5 V tRVCC I/O VCC Risetime 15 ns tFVCC I/O VCC Falltime 15 ns tRVL I/O VL Risetime 15 ns tFVL I/O VL Falltime 15 ns tPDVL−VCC Propagation Delay (Driving I/O VL) 15 ns tPDVCC−VL Propagation Delay (Driving I/O VCC) 15 ns Part−to−Part Skew 10 nS tPPSKEW MDR Maximum Data Rate 16 Mb/s +2.5 v VL v VCC v +3.3 V tRVCC I/O VCC Risetime 15 ns tFVCC I/O VCC Falltime 15 ns tRVL I/O VL Risetime 15 ns tFVL I/O VL Falltime 15 ns tPDVL−VCC Propagation Delay (Driving I/O VL) 15 ns tPDVCC−VL Propagation Delay (Driving I/O VCC) 15 ns Part−to−Part Skew 10 nS tPPSKEW MDR Maximum Data Rate 20 3. All units are production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design. www.onsemi.com 4 Mb/s NLSX3378 TIMING CHARACTERISTICS − OPEN DRAIN DRIVING CONFIGURATIONS (I/O test circuit of Figures 4 and 5, CLOAD = 15 pF, driver output impedance v 50 W, RLOAD = 1 MW) −405C to +855C (Note 4) Symbol Parameter Test Conditions Min Typ Max Unit +1.2 v VL v VCC v +4.5 V tRVCC I/O VCC Risetime 400 ns tFVCC I/O VCC Falltime 50 ns tRVL I/O VL Risetime 400 ns tFVL I/O VL Falltime 60 ns tPDVL−VCC Propagation Delay (Driving I/O VL) 1000 ns tPDVCC−VL Propagation Delay (Driving I/O VCC) 1000 ns 50 nS tPPSKEW MDR Part−to−Part Skew Maximum Data Rate 2 Mb/s 4. All units are production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design. Limits over the operating temperature range are guaranteed by design. www.onsemi.com 5 NLSX3378 TEST SETUPS NLSX3378 VL VCC NLSX3378 VL EN I/O VL I/O VCC Source I/O VL I/O VCC CLOAD CLOAD RLOAD NLSX3378 Figure 3. Rail−to−Rail Driving I/O VCC NLSX3378 VL VCC EN I/O VCC I/O VCC VCC CLOAD CLOAD RLOAD RLOAD Figure 4. Open−Drain Driving I/O VL Figure 5. Open−Drain Driving I/O VCC tRISE/FALL v 3 ns I/O VL tPD_VL−VCC I/O VCC VCC EN I/O VL 90% 50% 10% Source RLOAD Figure 2. Rail−to−Rail Driving I/O VL VL VCC EN tRISE/FALL v 3 ns I/O VCC 90% 50% 10% tPD_VCC−VL I/O VL tPD_VL−VCC 90% 50% 10% tPD_VCC−VL 90% 50% 10% tF−VCC tR−VCC tF−VL Figure 6. Definition of Timing Specification Parameters www.onsemi.com 6 tR−VL NLSX3378 VCC 2xVCC OPEN R1 PULSE GENERATOR DUT RT CL Test RL Switch tPZH, tPHZ Open tPZL, tPLZ 2 x VCC CL = 15 pF or equivalent (Includes jig and probe capacitance) RL = R1 = 50 kW or equivalent RT = ZOUT of pulse generator (typically 50 W) Figure 7. Test Circuit for Enable/Disable Time Measurement tR tF Input tPLH Output EN VCC 90% 50% 10% GND GND tPZL tPHL 90% 50% 10% tR VL 50% Output Output HIGH IMPEDANCE 50% tPZH tF tPLZ tPHZ 10% VOL 90% VOH 50% Figure 8. Timing Definitions for Propagation Delays and Enable/Disable Measurement www.onsemi.com 7 HIGH IMPEDANCE NLSX3378 APPLICATIONS INFORMATION Level Translator Architecture Enable Input (EN) The NLSX3378 auto sense translator provides bi−directional voltage level shifting to transfer data in multiple supply voltage systems. This device has two supply voltages, VL and VCC, which set the logic levels on the input and output sides of the translator. When used to transfer data from the VL to the VCC ports, input signals referenced to the VL supply are translated to output signals with a logic level matched to VCC. In a similar manner, the VCC to VL translation shifts input signals with a logic level compatible to VCC to an output signal matched to VL. The NLSX3378 consists of two bi−directional channels that independently determine the direction of the data flow without requiring a directional pin. The one−shot circuits are used to detect the rising or falling input signals. In addition, the one shots decrease the rise and fall time of the output signal for high−to−low and low−to−high transitions. Each input/output channel has an internal 10 kW pull. The magnitude of the pullup resistors can be reduced by connecting external resistors in parallel to the internal 10 kW resistors. The NLSX3378 has an Enable pin (EN) that provides tri−state operation at the I/O pins. Driving the Enable pin to a low logic level minimizes the power consumption of the device and drives the I/O VCC and I/O VL pins to a high impedance state. Normal translation operation occurs when the EN pin is equal to a logic high signal. The EN pin is referenced to the VL supply and has Overvoltage Tolerant (OVT) protection. Power Supply Guidelines During normal operation, supply voltage VL should be less than or equal to VCC. The sequencing of the power supplies will not damage the device during the power up operation. The enable pin should be used to enter the low current tri−state mode, rather than setting either the VL or VCC supplies to 0 V. The NLSX3378 will not be damaged if either VL or VCC is equal to 0 V while the other supply voltage is at a nominal operating value; however, the operation of the translator cannot be guaranteed during single supply operation. For optimal performance, 0.01 mF to 0.1 mF decoupling capacitors should be used on the VL and VCC power supply pins. Ceramic capacitors are a good design choice to filter and bypass any noise signals on the voltage lines to the ground plane of the PCB. The noise immunity will be maximized by placing the capacitors as close as possible to the supply and ground pins, along with minimizing the PCB connection traces. Input Driver Requirements The rise (tR) and fall (tF) timing parameters of the open drain outputs depend on the magnitude of the pull−up resistors. In addition, the propagation times (tPD), skew (tPSKEW) and maximum data rate depend on the impedance of the device that is connected to the translator. The timing parameters listed in the data sheet assume that the output impedance of the drivers connected to the translator is less than 50 kW. ORDERING INFORMATION Device NLSX3378FCT1G NLSX3378BFCT1G Package Shipping† mBump12 (Pb−Free) 3000 / Tape & Reel mBump12 (Backside Laminate Coating) (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 8 NLSX3378 PACKAGE DIMENSIONS mBump12, 2.02x1.54, 0.5P CASE 499AU−01 ISSUE O D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. B PIN A1 REFERENCE E 2X 0.10 C 0.10 C 2X TOP VIEW A A2 0.10 C A1 0.05 C 12X DIM A A1 A2 b D D1 E E1 e C SIDE VIEW NOTE 3 MILLIMETERS MIN MAX −−− 0.66 0.21 0.27 0.33 0.39 0.29 0.34 2.02 BSC 1.50 BSC 1.54 BSC 1.00 BSC 0.50 BSC SEATING PLANE D1 e/2 12X e b 0.05 C A B C 0.03 C B E1 A 1 2 3 4 BOTTOM VIEW ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent− Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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