ENA1899 D

Ordering number : ENA1899A
LV5710GP
Bi-CMOS LSI
Power Supply for Charge Pump
for Camera Sensor
http://onsemi.com
Overview
The LV5710GP is power supply for charge pump for camera sensor.
Functions
 Regulating the 5V input by boosting it three-fold with the charge pump
to the specified voltage.
 Output voltage variable with external resistor.
 Soft start function incorporated, which reduces the rush current at start
of charge pump.
 Timer-latch type short-circuit protective function incorporated.
VCT20 3x3, 0.5P
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Maximum supply voltage
Allowable power dissipation
Symbol
Conditions
Ratings
VDD max
Pd max
with specified substrate *
Unit
6.0
V
0.55
W
Operating temperature
Topr
20 to +80
C
Storage temperature
Tstg
40 to +125
C
* : Specified substrate : 114.3mm76.1mm1.6mm, glass epoxy board
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Allowable Operating Ratings at Ta = 25C
Ratings
Parameter
Symbol
Conditions
Unit
min
Supply voltage
VDD
Input “H” voltage
VINH
Input “L” voltage
VINL
typ
max
4.5
5.5
V
EN pin
1.5
VDD
V
EN pin
0.1
0.4
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
Semiconductor Components Industries, LLC, 2014
August, 2014
80614HK/D0810SY 20101125-S00002 No.A1899-1/7
LV5710GP
Electrical Characteristics at Ta = 25°C, VDD = 5V, IOUT = 30mA, S0 = L, S1 = L, Unless otherwise specified
Ratings
Parameter
Symbol
Conditions
Unit
min
Circuit current drain
IDD1
EN = L
IDD2
EN = H No load
typ
Output load current
IO ave
At VOUT = 12V setting
Reference voltage
VREF
VDD = 4.5 to 5.5V
1.285
Ta = 20°C to +80°C, Design value
1.279
Output voltage at OFF
VOFF
Protective circuit masking time
Tmask
50
After capacitive discharge
max
1
A
12
18
mA
30
mA
1.305
1.325
1.331
V
V
0
50
mV
18
33
ms
35
50
65
mA
82.5
87.5
92.5
%
10
ms
30
40
mV
40
50
A
1
A
300
mA
2.3
MHz
Masking time from detection of short-circuit
to IC OFF
Short-circuit protective current
Ilim
Short-circuit protective voltage
SS end time
Vlim
TSSEND
Time from EN = H to regulator SS OFF
Ta = 20°C to +80°C Design value
RO load regulation
RO
Input pin current
Iin
Load 1mA  30mA
Pins EN
30
S0 and S1 pins
Power efficiency
Peff
CP+regulator
Rush current
Irush
No load
Oscillation frequency
f clk
70
1.4
1.8
%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Pd max -- Ta
Allowable power dissipation, Pd max – W
0.8
Mounted on a substrate : 114.3×76.1×1.6mm3
glass epoxy
0.6
0.55
0.4
0.25
0.2
0
– 20
0
20
40
60
80
100
Ambient temperature, Ta – °C
No.A1899-2/7
LV5710GP
Package Dimensions
unit : mm
VCT20 3x3, 0.5P
CASE 601AB
ISSUE A
SOLDERING FOOTPRINT*
2.70
(Unit: mm)
GENERIC MARKING DIAGRAM*
XXXXXX
YDD
2.70
XXXXXX
YMDDD
XXXXX = Specific Device Code
Y = Year
M = Month
DDD = Additional Traceability Data
XXXXX = Specific Device Code
Y = Year
DD = Additional Traceability Data
*This information is generic. Please refer to
device data sheet for actual part marking.
0.70
0.20
0.30
0.50
NOTE: The measurements are not to guarantee but for reference only.
*For additional information on our Pb- Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
No.A1899-3/7
LV5710GP
NC
RO
FB
EN
SVDD
20
19
18
17
16
Pin Assignment
S1
CPO
1
15
NC
2
14
TEST
C2P
3
13
S0
NC
4
12
C1P
5
11
6
7
8
9
10
PVDD
NC
C2M
C1M
PGND
LV5710GP
SGND
NC
Top view
Pin Function
Pin No.
Name
1
CPO
2
NC
3
C2P
4
NC
5
C1P
6
PVDD
Function
Boost voltage output (6VDD or 5VDD)
Boost capacitor connection pin (charge transfer side)
Boost capacitor connection pin (charge transfer side)
Power system VDD pin
7
NC
8
C2M
Boost capacitor connection pin (driver side)
9
C1M
Boost capacitor connection pin (driver side)
10
PGND
11
NC
12
SGND
Power GND pin for the charge pump
Small signal system GND pin
13
S0
14
TEST
Charge pump frequency changeover pin
Test pin (open or short-circuited to GND)
15
S1
Charge pump frequency changeover pin
16
SVDD
17
EN
System enable pin (Hi active)
18
FB
Regulator FB pin
19
RO
Regulator output pin
20
NC
Small signal system VDD pin
No.A1899-4/7
LV5710GP
Block Diagram
RO
PVDD
1μF
FB
PGND
+
-
4.7μF
vref
CPO
1μF
SVDD
bandgap
voltage
reference
1μF
Timing
Control
Step-Up
Circuit
C2P
SGND
C1P
2bit MUX
S0
0.22μF
S1
Divider
EN
2MHz
OSC
C1M
C2M
active
Sequence Control Block
Equivalent Circuit Diagram
PVDD
VIN = 4.5V to
5.5V
M1
M2
M3
C1P
+
-
+3VIN
CPO
C2P
VIN
+
-
2VIN
Vref
3VIN
+
VOUT
RO
C1M
CLK
FB
C2M
No.A1899-5/7
LV5710GP
Output Voltage Setting Method
The output voltage of IC-incorporated LDO can be determined as follows :
VH =
R1+R2
R2  VREF
For example, to set the output voltage to 12V, set the resistance
Value to R1 = 1070k/R2 = 130k.
CPO
RO
R1
VREF = 1.3V
FB
R2
Short-circuit Protective Operation
The RO output pin has the short-circuit protective function.
The over-current detector circuit outputs the detection signal when the output current of 50mA (typ) or more flows or
when the output voltage drops below 87.5% (typ). When this detection signal is output continuously for 18ms (typ) or
more, IC determines that there is over-current and stops the output. To reset from the stop state, set the EN pin to “L”,
then set the EN pin to “H” again.
CPO
RO
+
Output voltage
FB
detection comparator
0.875
× VREF
Short-circuit
+
detection signal
- Output current
detection comparator
VREF
Equivalent circuit of the over-current detection circuit
Selecting the Frequency
According to the logic of S0 and S1, the charge pump operation frequency can be changed.
In the case of light load, the reactive power can be reduced by decreasing the operating frequency.
S0
S1
L
L
CP operating frequency
1MHz
H
L
500kHz
L
H
250kHz
H
H
125kHz
No.A1899-6/7
LV5710GP
Startup sequence
Set EN = H after setting
VDD = 4.5V or more
Stop with EN = L or for overcurrent protection
Never allow VDD to decrease below
4.5V till EN = L is established
VDD
EN
Charge pump
output CPO
Regulator
output RO
S0
Frequency selection
Do not allow the signal to change
Frequency selection
Do not allow the signal to change
Frequency selection
S1
Frequency selection
Do not allow the signal to change
Frequency selection
Do not allow the signal to change
Frequency selection
* CP clock 1MHz
* CP clock 500kHz
* CP clock 250kHz
* CP clock 125kHz
* IC internal signal
Start at 1MHz
Steady operation
SS end
10ms (max)
Start at 1MHz
Steady operation
SS end
10ms (max)
EN Pin and VDD
The sequence operation is made at startup. However, startup is not made when the internal circuit has not been reset.
To reset the internal circuit, keep the EN pin to “L” till VDD becomes 4.5V or more.
Note that VDD and EN pin cannot be short-circuited for this purpose.
ORDERING INFORMATION
Device
LV5710GP-TE-L-H
Package
VCT20 3x3, 0.5P
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
2000 / Tape & Reel
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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PS No.A1899-7/7