Ordering number : ENA1117 Bi-CMOS LSI For camera sensor LV5710V Power supply for charge pump Overview The LV5710V is power supply for charge pump for camera sensor. Functions • Regulating the 5V input by boosting it three-fold with the charge pump to the specified voltage. • Output voltage variable with external resistor. • Soft start function incorporated, which reduces the rush current at start of charge pump. • Timer-latch type short-circuit protective function incorporated. Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Maximum supply voltage Allowable power dissipation Symbol Conditions Ratings Unit VDD max Pd max with specified substrate * 6.0 V 0.55 W Operating temperature Topr -20 to +80 °C Storage temperature Tstg -40 to +125 °C * : Specified substrate : 114.3mm×76.1mm×1.6mm, glass epoxy board Allowable Operating Ratings at Ta = 25°C Parameter Symbol Ratings Conditions min typ Unit max Supply voltage VDD 4.5 5.5 V Input “H” voltage VINH EN pin 1.5 VDD V Input “L” voltage VINL EN pin -0.1 0.4 V Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. 31908 MS PC 20080226-S00011 No.A1117-1/6 LV5710V Electrical Characteristics at Ta = 25°C, VDD = 5V, IOUT = 30mA, S0 = L, S1 = L, Unless otherwise specified Parameter Symbol Ratings Conditions min Circuit current drain IDD1 EN = L IDD2 EN = H No load Output load current IO ave At VOUT = 12V setting Reference voltage VREF VDD = 4.5 to 5.5V 1.285 Ta = -20°C to +80°C, Design value 1.279 Output voltage at OFF VOFF Protective circuit masking time Tmask After capacitive discharge Unit typ max 1 μA 12 18 mA 30 mA 1.305 1.325 V 1.331 -50 V 0 50 mV 18 33 ms 35 50 65 mA 82.5 87.5 92.5 % 10 ms 30 40 mV 40 50 μA 1 μA 300 mA 2.3 MHz Masking time from detection of short-circuit to IC OFF Short-circuit protective current Ilim Short-circuit protective voltage Vlim SS end time TSSEND Time from EN = H to regulator SS OFF Ta = -20°C to +80°C Design value ΔRO RO load regulation Input pin current Load 1mA → 30mA Iin Pins EN 30 S0 and S1 pins Power efficiency Peff CP+regulator Rush current Irush No load Oscillation frequency f clk 70 1.4 % 1.8 Package Dimensions unit : mm (typ) 3178B Pd max -- Ta 5.2 0.5 6.4 9 4.4 16 1 8 0.65 0.15 0.6 0.55 0.4 0.25 0.2 0 – 20 0 20 40 60 80 100 Ambient temperature, Ta – °C (1.3) 1.5max 0.22 Mounted on a substrate : 114.3×76.1×1.6mm3 glass epoxy 0.1 (0.33) Allowable power dissipation, Pd max – W 0.8 SANYO : SSOP16(225mil) No.A1117-2/6 LV5710V Pin Assignment C2P 1 16 NC C1P 2 15 CPO PVDD 3 C1M 5 LV5710V C2M 4 14 RO 13 FB 12 EN PGND 6 11 SVDD SGND 7 10 S1 S0 8 9 TEST Top view Pin Function Pin No. Name Function 1 C2P 2 C1P 3 PVDD 4 C2M 5 C1M 6 PGND 7 SGND 8 S0 Charge pump frequency changeover pin 9 TEST Test pin (open or short-circuited to GND) Boost capacitor connection pin (charge transfer side) Boost capacitor connection pin (charge transfer side) Power system VDD pin Boost capacitor connection pin (driver side) Boost capacitor connection pin (driver side) Power GND pin for the charge pump Small signal system GND pin 10 S1 11 SVDD Small signal system VDD pin Charge pump frequency changeover pin 12 EN System enable pin (Hi active) 13 FB Regulator FB pin 14 RO Regulator output pin 15 CPO 16 NC Boost voltage output (3VDD) No.A1117-3/6 LV5710V Block Diagram RO PVDD 1μF FB PGND + - 4.7μF vref CPO 1μF SVDD bandgap voltage reference 1μF Timing Control Step-Up Circuit C2P SGND C1P 2bit MUX S0 0.22μF S1 Divider EN 2MHz OSC C1M C2M active Sequence Control Block Equivalent Circuit Diagram PVDD VIN = 4.5V to 5.5V M1 M2 M3 C1P + - +3VIN CPO C2P VIN + - 2VIN Vref 3VIN + VOUT RO C1M CLK FB C2M No.A1117-4/6 LV5710V Output Voltage Setting Method The output voltage of IC-incorporated LDO can be determined as follows : VH = R1+R2 R2 × VREF For example, to set the output voltage to 12V, set the resistance Value to R1 = 1070kΩ/R2 = 130kΩ. CPO RO R1 VREF = 1.3V FB R2 Short-circuit Protective Operation The RO output pin has the short-circuit protective function. The over-current detector circuit outputs the detection signal when the output current of 50mA (typ) or more flows or when the output voltage drops below 87.5% (typ). When this detection signal is output continuously for 18ms (typ) or more, IC determines that there is over-current and stops the output. To reset from the stop state, set the EN pin to “L”, then set the EN pin to “H” again. CPO RO + Output voltage FB detection comparator 0.875 × VREF Short-circuit + detection signal - Output current detection comparator VREF Equivalent circuit of the over-current detection circuit Selecting the Frequency According to the logic of S0 and S1, the charge pump operation frequency can be changed. In the case of light load, the reactive power can be reduced by decreasing the operating frequency. S0 S1 L L CP operating frequency 1MHz H L 500kHz L H 250kHz H H 125kHz No.A1117-5/6 LV5710V Startup sequence Set EN = H after setting VDD = 4.5V or more Stop with EN = L or for overcurrent protection Never allow VDD to decrease below 4.5V till EN = L is established VDD EN Charge pump output CPO Regulator output RO S0 Frequency selection Do not allow the signal to change Frequency selection Do not allow the signal to change Frequency selection S1 Frequency selection Do not allow the signal to change Frequency selection Do not allow the signal to change Frequency selection * CP clock 1MHz * CP clock 500kHz * CP clock 250kHz * CP clock 125kHz * IC internal signal Start at 1MHz Steady operation SS end 10ms (max) Start at 1MHz Steady operation SS end 10ms (max) EN Pin and VDD The sequence operation is made at startup. However, startup is not made when the internal circuit has not been reset. To reset the internal circuit, keep the EN pin to “L” till VDD becomes 4.5V or more. Note that VDD and EN pin cannot be short-circuited for this purpose. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice. PS No.A1117-6/6