Ordering number : ENA1100A 15GN01MA RF Transistor http://onsemi.com 8V, 50mA, fT=1.5GHz, NPN Single MCP Features • • Small ON-resistance [Ron=2Ω (IB=3mA)] Small output capacitance [Cob=1.1pF (VCB=10V)] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Conditions Ratings Unit VCBO VCEO 15 V 8 V VEBO IC 3 V 50 mA 400 mW Junction Temperature PC Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7023A-009 • Package : MCP • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 15GN01MA-TL-E 0.2 0.15 3 0.9 Packing Type: TL Marking 1.25 0 to 0.08 LOT No. 1 ZA 2 0.65 LOT No. TL 0.3 0.3 0.425 2.1 0.425 2.0 1 : Base 2 : Emitter 3 : Collector MCP Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 71812 TKIM/93009AB TKIM TC-00002115 No. A1100-1/7 15GN01MA Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ Unit max ICBO IEBO VCB=10V, IE=0A VEB=2V, IC=0A Gain-Bandwidth Product hFE fT VCE=5V, IC=10mA VCE=5V, IC=10mA Output Capacitance Cob 1.1 1.5 Collector-to-Emitter Saturation Voltage VCE(sat) Ron VCB=10V, f=1MHz IC=20mA, IB=2mA 0.06 0.12 IB=3mA, f=10kHz 2.0 Emitter Cutoff Current DC Current Gain Output ON resistance 200 0.5 μA 0.5 μA 400 1.0 1.5 GHz pF V Ω Ordering Information Package Shipping memo MCP 3,000pcs./reel Pb Free Collector Current, IC -- mA 50 IC -- VCE 45 0.30 IC -- VCE 10 45μA mA 0.25mA 40 0.20mA 35 30 0.15mA 25 0.10mA 20 15 0.05mA 10 Collector Current, IC -- mA Device 15GN01MA-TL-E 9 40μA 8 35μA 7 30μA 6 25μA 5 20μA 4 15μA 3 10μA 2 5μA 1 5 IB=0mA 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 Collector-to-Emitter Voltage, VCE -- V 0.45 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 IT06247 hFE -- IC 7 VCE=5V VCE=5V 50 5 DC Current Gain, hFE Collector Current, IC -- mA 4.5 Collector-to-Emitter Voltage, VCE -- V IT06246 IC -- VBE 60 IB=0μA 0 0.50 40 30 20 3 2 10 0 100 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT06248 2 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 IT05405 No. A1100-2/7 15GN01MA f T -- IC 5 Cob -- VCB 5 f=1MHz Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- GHz VCE=5V 3 2 1.0 7 5 3 1.0 2 3 5 7 2 10 3 5 Collector Current, IC -- mA 2 1.0 7 5 0.1 7 100 IT05402 2 3 5 7 2 1.0 3 5 Collector-to-Base Voltage, VCB -- V Cre -- VCB 5 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Reverse Transfer Capacitance, Cre -- pF 2 1.0 7 5 0.1 IC / IB=10 0.1 7 5 3 2 0.01 2 3 5 7 2 1.0 3 5 7 3 10 IT06250 Collector-to-Base Voltage, VCB -- V 5 7 2 1.0 8 10kΩ 7 IB Collector Dissipation, PC -- mW Output ON resistance, Ron -- Ω 400 OUT 6 5 4 3 7 2 10 3 5 7 IT06249 When mounted on ceramic substrate (250mm2✕0.8mm) f=10kHz IN 5 PC -- Ta 450 1kΩ 9 3 Collector Current, IC -- mA Ron -- IB 10 350 300 250 200 150 100 50 2 1 0.1 10 VCE(sat) -- IC 2 f=1MHz 3 7 IT05404 0 2 3 5 7 1.0 Base Current, IB -- mA 2 3 5 IT05403 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06251 No. A1100-3/7 15GN01MA S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 ⏐S11⏐ 0.662 0.582 0.529 0.487 0.459 0.429 0.409 0.388 0.374 0.365 ∠S11 -25.65 -36.72 -47.21 -56.61 -65.82 -74.14 -82.44 -89.94 -96.79 -103.28 ⏐S21⏐ 4.631 3.028 2.353 1.955 1.691 1.496 1.353 1.239 1.149 1.072 ∠S21 122.00 112.20 104.69 97.68 91.07 85.11 79.01 73.29 67.98 63.13 ⏐S12⏐ 0.028 0.051 0.071 0.088 0.103 0.116 0.128 0.138 0.148 0.156 ∠S12 71.36 68.80 65.59 63.00 60.43 57.83 56.22 54.76 53.44 52.60 ⏐S22⏐ 0.765 0.732 0.713 0.700 0.689 0.679 0.674 0.671 0.671 0.670 ∠S22 -10.50 -14.15 -17.91 -21.58 -25.23 -28.81 -32.38 -35.89 -39.34 -42.75 ∠S11 -31.65 -46.40 -59.47 -70.80 -81.80 -91.29 -101.15 -109.42 -116.99 -124.06 ⏐S21⏐ 6.647 4.239 3.227 2.616 2.217 1.922 1.715 1.544 1.414 1.305 ∠S21 118.78 108.57 100.32 93.18 86.64 80.82 74.86 69.40 64.16 59.41 ⏐S12⏐ 0.026 0.046 0.064 0.079 0.093 0.105 0.115 0.125 0.135 0.144 ∠S12 71.86 68.22 65.90 63.91 62.30 60.39 59.29 58.34 57.86 57.47 ⏐S22⏐ 0.694 0.653 0.630 0.619 0.607 0.598 0.596 0.593 0.594 0.593 ∠S22 -11.96 -15.76 -19.10 -22.50 -25.83 -29.19 -32.72 -36.10 -39.48 -42.80 ∠S11 -41.07 -60.49 -76.83 -90.31 -102.08 -112.57 -122.49 -130.50 -137.80 -144.30 ⏐S21⏐ 8.945 5.500 4.039 3.197 2.654 2.264 1.988 1.771 1.605 1.470 ∠S21 114.82 103.75 95.20 88.11 81.71 76.38 70.80 65.75 60.92 56.51 ⏐S12⏐ 0.023 0.042 0.056 0.070 0.082 0.094 0.104 0.115 0.125 0.135 ∠S12 71.42 69.03 67.39 66.22 65.43 64.49 64.03 63.95 64.09 64.16 ⏐S22⏐ 0.611 0.568 0.548 0.539 0.533 0.528 0.530 0.530 0.534 0.537 ∠S22 -13.64 -16.14 -18.89 -21.75 -24.77 -27.99 -31.32 -34.57 -37.93 -41.24 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 ⏐S11⏐ 0.587 0.502 0.444 0.405 0.381 0.356 0.342 0.329 0.319 0.315 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 ⏐S11⏐ 0.505 0.417 0.369 0.341 0.328 0.316 0.311 0.306 0.304 0.306 No. A1100-4/7 15GN01MA Embossed Taping Specification 15GN01MA-TL-E No. A1100-5/7 15GN01MA Outline Drawing 15GN01MA-TL-E Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No. A1100-6/7 15GN01MA ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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