SANYO 15GN01MA

15GN01MA
Ordering number : ENA1100
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
15GN01MA
VHF to UHF Band High-Frequency Switching,
High-Frequency General-Purpose Amplifier Applications
Features
•
•
Small ON-resistance [Ron=2Ω (IB=3mA)].
Small output capacitance [Cob=1.1pF (VCB=10V)].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
15
V
8
V
VEBO
IC
3
V
50
mA
Junction Temperature
PC
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (250mm2✕0.8mm)
400
mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
Conditions
Ratings
min
typ
max
Unit
ICBO
IEBO
VCB=10V, IE=0A
0.5
μA
Emitter Cutoff Current
VEB=2V, IC=0A
0.5
μA
DC Current Gain
hFE
Gain-Bandwidth Product
fT
Cob
VCE=5V, IC=10mA
VCE=5V, IC=10mA
Output Capacitance
Collector-to-Emitter Saturation Voltage
Output ON resistance
VCE(sat)
Ron
200
1.0
400
1.5
GHz
VCB=10V, f=1MHz
1.1
1.5
IC=20mA, IB=2mA
0.06
0.12
IB=3mA, f=10kHz
2.0
pF
V
Ω
Marking : ZA
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
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93009AB TK IM TC-00002115 No. A1100-1/5
15GN01MA
Package Dimensions
0.15
0.2
0.3
3
0 to 0.1
1.25
0.425
2.1
0.425
unit : mm (typ)
7023-009
1
2
0.65 0.65
0.3
0.6
0.9
2.0
1 : Base
2 : Emitter
3 : Collector
50
IC -- VCE
45
0.30
IC -- VCE
10
mA
40
0.20mA
35
30
0.15mA
25
0.10mA
20
15
0.05mA
10
45μA
9
0.25mA
Collector Current, IC -- mA
Collector Current, IC -- mA
SANYO : MCP
40μA
8
35μA
7
30μA
6
25μA
5
20μA
4
15μA
3
10μA
2
5μA
1
5
IB=0mA
0
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
Collector-to-Emitter Voltage, VCE -- V
0.45
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
IT06247
hFE -- IC
7
VCE=5V
VCE=5V
50
5
DC Current Gain, hFE
Collector Current, IC -- mA
4.5
Collector-to-Emitter Voltage, VCE -- V
IT06246
IC -- VBE
60
IB=0μA
0
0.50
40
30
20
3
2
10
0
100
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT06248
2
3
5
7 1.0
2
3
5
7
10
2
Collector Current, IC -- mA
3
5
7 100
IT05405
No. A1100-2/5
15GN01MA
f T -- IC
5
Cob -- VCB
5
f=1MHz
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- GHz
VCE=5V
3
2
1.0
7
5
3
1.0
2
3
5
7
2
10
3
5
Collector Current, IC -- mA
2
1.0
7
5
0.1
7
100
IT05402
2
3
5
7
2
1.0
3
5
Collector-to-Base Voltage, VCB -- V
Cre -- VCB
5
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Reverse Transfer Capacitance, Cre -- pF
2
1.0
7
5
0.1
IC / IB=10
0.1
7
5
3
2
0.01
2
3
5
7
2
1.0
3
5
7
3
10
IT06250
Collector-to-Base Voltage, VCB -- V
5
7
2
1.0
1kΩ
8
10kΩ
7
IB
Collector Dissipation, PC -- mW
Output ON resistance, Ron -- Ω
OUT
6
5
4
3
7
2
10
3
5
7
IT06249
When mounted on ceramic substrate
(250mm2✕0.8mm)
400
IN
5
PC -- Ta
450
f=10kHz
9
3
Collector Current, IC -- mA
Ron -- IB
10
350
300
250
200
150
100
50
2
1
0.1
10
VCE(sat) -- IC
2
f=1MHz
3
7
IT05404
0
2
3
5
7
1.0
Base Current, IB -- mA
2
3
5
IT05403
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT06251
No. A1100-3/5
15GN01MA
S Parameters (Common emitter)
VCE=5V, IC=5mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.662
--25.65
4.631
122.00
0.028
71.36
0.765
--10.50
200
0.582
--36.72
3.028
112.20
0.051
68.80
0.732
--14.15
300
0.529
--47.21
2.353
104.69
0.071
65.59
0.713
--17.91
400
0.487
--56.61
1.955
97.68
0.088
63.00
0.700
--21.58
500
0.459
--65.82
1.691
91.07
0.103
60.43
0.689
--25.23
600
0.429
--74.14
1.496
85.11
0.116
57.83
0.679
--28.81
700
0.409
--82.44
1.353
79.01
0.128
56.22
0.674
--32.38
800
0.388
--89.94
1.239
73.29
0.138
54.76
0.671
--35.89
900
0.374
--96.79
1.149
67.98
0.148
53.44
0.671
--39.34
1000
0.365
--103.28
1.072
63.13
0.156
52.60
0.670
--42.75
VCE=5V, IC=10mA, ZO=50Ω
⏐S11⏐
0.587
∠S11
--31.65
⏐S21⏐
6.647
∠S21
118.78
⏐S12⏐
100
0.026
∠S12
71.86
⏐S22⏐
0.694
∠S22
--11.96
200
0.502
--46.40
4.239
108.57
0.046
68.22
0.653
--15.76
300
0.444
--59.47
3.227
100.32
0.064
65.90
0.630
--19.10
400
0.405
--70.80
2.616
93.18
0.079
63.91
0.619
--22.50
500
0.381
--81.80
2.217
86.64
0.093
62.30
0.607
--25.83
600
0.356
--91.29
1.922
80.82
0.105
60.39
0.598
--29.19
700
0.342
--101.15
1.715
74.86
0.115
59.29
0.596
--32.72
800
0.329
--109.42
1.544
69.40
0.125
58.34
0.593
--36.10
Freq(MHz)
900
0.319
--116.99
1.414
64.16
0.135
57.86
0.594
--39.48
1000
0.315
--124.06
1.305
59.41
0.144
57.47
0.593
--42.80
VCE=5V, IC=20mA, ZO=50Ω
⏐S11⏐
0.505
∠S11
--41.07
⏐S21⏐
8.945
∠S21
114.82
⏐S12⏐
100
0.023
∠S12
71.42
⏐S22⏐
0.611
∠S22
--13.64
200
0.417
--60.49
5.500
103.75
0.042
69.03
0.568
--16.14
300
0.369
--76.83
4.039
95.20
0.056
67.39
0.548
--18.89
400
0.341
--90.31
3.197
88.11
0.070
66.22
0.539
--21.75
500
0.328
--102.08
2.654
81.71
0.082
65.43
0.533
--24.77
600
0.316
--112.57
2.264
76.38
0.094
64.49
0.528
--27.99
700
0.311
--122.49
1.988
70.80
0.104
64.03
0.530
--31.32
800
0.306
--130.50
1.771
65.75
0.115
63.95
0.530
--34.57
900
0.304
--137.80
1.605
60.92
0.125
64.09
0.534
--37.93
1000
0.306
--144.30
1.470
56.51
0.135
64.16
0.537
--41.24
Freq(MHz)
No. A1100-4/5
15GN01MA
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of September, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1100-5/5