MJD243 D

MJD243(NPN),
MJD253(PNP)
Complementary Silicon
Plastic Power Transistors
DPAK−3 for Surface Mount Applications
http://onsemi.com
Designed for low voltage, low−power, high−gain audio amplifier
applications.
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
Features
• High DC Current Gain
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Low Collector−Emitter Saturation Voltage
High Current−Gain − Bandwidth Product
Annular Construction for Low Leakage
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
COMPLEMENTARY
COLLECTOR
2, 4
1
BASE
COLLECTOR
2, 4
1
BASE
3
EMITTER
3
EMITTER
4
4
MAXIMUM RATINGS
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
Value
Unit
VCB
100
Vdc
VCEO
100
Vdc
VEB
7.0
Vdc
IC
4.0
Adc
ICM
8.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
12.5
0.1
W
W/°C
Total Device Dissipation
@ TA = 25°C (Note 2)
Derate above 25°C
PD
1.4
0.011
W
W/°C
TJ, Tstg
−65 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Collector Current − Peak
Operating and Storage Junction
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted on minimum pad sizes recommended.
1
2
1 2
3
IPAK
CASE 369D
STYLE 1
3
DPAK−3
CASE 369C
STYLE 1
MARKING DIAGRAMS
AYWW
J253G
IPAK
A
Y
WW
x
G
AYWW
J2x3G
DPAK
= Assembly Location
= Year
= Work Week
= 4 or 5
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 15
1
Publication Order Number:
MJD243/D
MJD243 (NPN), MJD253 (PNP)
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
Symbol
Value
RqJC
RqJA
10
89.3
Min
Max
100
−
−
−
100
100
−
100
40
15
180
−
−
−
0.3
0.6
−
1.8
−
1.5
40
−
−
50
Unit
°C/W
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 2)
2. When surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TJ = 125°C)
ICBO
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
DC Current Gain (Note 3)
(IC = 200 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 3)
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
Base−Emitter On Voltage (Note 3)
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
Vdc
nAdc
mAdc
nAdc
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
fT
Current−Gain − Bandwidth Product (Note 4)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MHz
Cob
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
4. fT = ⎪hFE⎪• ftest.
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2
pF
MJD243 (NPN), MJD253 (PNP)
10
IC, COLLECTOR CURRENT (AMPS)
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
1.5 15
TA (SURFACE MOUNT)
1 10
TC
0.5
100ms
1ms
2
1
5ms
0.5
0.2
0.02
0
0.01
25
T, TEMPERATURE (°C)
2
5
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Power Derating
Figure 2. Active Region Maximum
Safe Operating Area
50
75
100
125
150
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.02
1
100
The data of Figure 2 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1
0.7
0.5
dc
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
0.1
0.05
5
0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
500ms
5
D = 0.5
0.2
0.1
RqJC(t) = r(t) qJC
RqJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.02
0.01
0 (SINGLE PULSE)
0.05
0.1
0.2
0.5
1
2
t, TIME (ms)
5
Figure 3. Thermal Response
http://onsemi.com
3
10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
20
50
100
200
MJD243 (NPN), MJD253 (PNP)
NPN
MJD243
PNP
MJD253
200
500
VCE = 1.0 V
VCE = 2.0 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
300
200
TJ = 150°C
25°C
100
70
50
-55°C
30
20
10
7.0
5.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
25°C
-55°C
30
20
10
7.0
5.0
3.0
2.0
0.04 0.06
4.0
VCE = 1.0 V
VCE = 2.0 V
TJ = 150°C
100
70
50
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 4. DC Current Gain
1.4
1.4
TJ = 25°C
1.2
1.2
1.0
1.0
0.8
0.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
IC/IB = 10
0.4
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 1.0 V
0.6
0.4
IC/IB = 10
5.0
5.0
0.2
0.2
VCE(sat)
0
0.04 0.06
0.1
VCE(sat)
0.2
0.4 0.6
1.0
2.0
0
0.04 0.06
4.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2
0.4
0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
-1.0
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
Figure 5. “On” Voltages
25°C to 150°C
-1.5
-2.0
qVB FOR VBE
-2.5
0.04 0.06
0.1
-55°C to 25°C
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
+2.5
+2.0
*APPLIES FOR IC/IB ≤ hFE/3
+1.5
+1.0
+0.5
25°C to 150°C
*qVC FOR VCE(sat)
0
-55°C to 25°C
-0.5
-1.0
-1.5
25°C to 150°C
qVB FOR VBE
-2.5
0.04 0.06
4.0
-55°C to 25°C
-2.0
0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Temperature Coefficients
http://onsemi.com
4
2.0
4.0
MJD243 (NPN), MJD253 (PNP)
VCC
+30 V
1K
RC
25 ms
+11 V
SCOPE
RB
t, TIME (ns)
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
tr
100
0
-9.0 V
500
300
200
-4 V
50
30
20
td
10
5
3
2
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
1
0.01
NPN MJD243
PNP MJD253
0.02 0.03 0.05 0.1
1
2
0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
10K
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
TJ = 25°C
100
C, CAPACITANCE (pF)
ts
1K
500
300
200
100
Cib
70
50
30
Cob
20
tf
MJD243 (NPN)
MJD253 (PNP)
NPN MJD243
PNP MJD253
0.2 0.3 0.5
1
2
0.02 0.03 0.05 0.1
IC, COLLECTOR CURRENT (AMPS)
3
5
10
1.0
10
2.0
3.0
5.0 7.0 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Turn−Off Time
Figure 10. Capacitance
200
TJ = 25°C
100
C, CAPACITANCE (pF)
t, TIME (ns)
5
200
5K
3K
2K
10
0.01
3
Figure 8. Turn−On Time
Figure 7. Switching Time Test Circuit
50
30
20
VCC = 30 V
IC/IB = 10
TJ = 25°C
Cib
70
50
30
20
10
Cob
1
2
3
5
7 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
http://onsemi.com
5
50
70 100
50 70 100
MJD243 (NPN), MJD253 (PNP)
ORDERING INFORMATION
Package Type
Package
Shipping†
MJD243G
DPAK−3
(Pb−Free)
369C
75 Units / Rail
MJD243T4G
DPAK−3
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD243T4G*
DPAK−3
(Pb−Free)
369C
2,500 / Tape & Reel
MJD253−1G
IPAK
(Pb−Free)
369D
75 Units / Rail
MJD253T4G
DPAK−3
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD253T4G*
DPAK−3
(Pb−Free)
369C
2,500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
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6
MJD243 (NPN), MJD253 (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
INCHES
MILLIMETERS
DIM MIN
MAX
MIN
MAX
A 0.086 0.094
2.18
2.38
A1 0.000 0.005
0.00
0.13
b 0.025 0.035
0.63
0.89
b2 0.030 0.045
0.76
1.14
b3 0.180 0.215
4.57
5.46
c
0.018 0.024
0.46
0.61
c2 0.018 0.024
0.46
0.61
D 0.235 0.245
5.97
6.22
E 0.250 0.265
6.35
6.73
e
0.090 BSC
2.29 BSC
H 0.370 0.410
9.40 10.41
L 0.055 0.070
1.40
1.78
L1
0.108 REF
2.74 REF
L2
0.020 BSC
0.51 BSC
L3 0.035 0.050
0.89
1.27
L4
−−− 0.040
−−−
1.01
Z 0.155
−−−
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MJD243 (NPN), MJD253 (PNP)
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
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MJD243/D