MJD243(NPN), MJD253(PNP) Complementary Silicon Plastic Power Transistors DPAK−3 for Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Features • High DC Current Gain • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Low Collector−Emitter Saturation Voltage High Current−Gain − Bandwidth Product Annular Construction for Low Leakage Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant COMPLEMENTARY COLLECTOR 2, 4 1 BASE COLLECTOR 2, 4 1 BASE 3 EMITTER 3 EMITTER 4 4 MAXIMUM RATINGS Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Symbol Value Unit VCB 100 Vdc VCEO 100 Vdc VEB 7.0 Vdc IC 4.0 Adc ICM 8.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 0.1 W W/°C Total Device Dissipation @ TA = 25°C (Note 2) Derate above 25°C PD 1.4 0.011 W W/°C TJ, Tstg −65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Collector Current − Peak Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted on minimum pad sizes recommended. 1 2 1 2 3 IPAK CASE 369D STYLE 1 3 DPAK−3 CASE 369C STYLE 1 MARKING DIAGRAMS AYWW J253G IPAK A Y WW x G AYWW J2x3G DPAK = Assembly Location = Year = Work Week = 4 or 5 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 15 1 Publication Order Number: MJD243/D MJD243 (NPN), MJD253 (PNP) THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Value RqJC RqJA 10 89.3 Min Max 100 − − − 100 100 − 100 40 15 180 − − − 0.3 0.6 − 1.8 − 1.5 40 − − 50 Unit °C/W Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 2) 2. When surface mounted on minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 10 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TJ = 125°C) ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO DC Current Gain (Note 3) (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE Collector−Emitter Saturation Voltage (Note 3) (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base−Emitter Saturation Voltage (Note 3) (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) Base−Emitter On Voltage (Note 3) (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) Vdc nAdc mAdc nAdc − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (Note 4) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MHz Cob 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = ⎪hFE⎪• ftest. http://onsemi.com 2 pF MJD243 (NPN), MJD253 (PNP) 10 IC, COLLECTOR CURRENT (AMPS) PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 1.5 15 TA (SURFACE MOUNT) 1 10 TC 0.5 100ms 1ms 2 1 5ms 0.5 0.2 0.02 0 0.01 25 T, TEMPERATURE (°C) 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Power Derating Figure 2. Active Region Maximum Safe Operating Area 50 75 100 125 150 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 1 100 The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 1 0.7 0.5 dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.1 0.05 5 0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 500ms 5 D = 0.5 0.2 0.1 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 Figure 3. Thermal Response http://onsemi.com 3 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 MJD243 (NPN), MJD253 (PNP) NPN MJD243 PNP MJD253 200 500 VCE = 1.0 V VCE = 2.0 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 200 TJ = 150°C 25°C 100 70 50 -55°C 30 20 10 7.0 5.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 25°C -55°C 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 4.0 VCE = 1.0 V VCE = 2.0 V TJ = 150°C 100 70 50 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 4. DC Current Gain 1.4 1.4 TJ = 25°C 1.2 1.2 1.0 1.0 0.8 0.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 0.4 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 1.0 V 0.6 0.4 IC/IB = 10 5.0 5.0 0.2 0.2 VCE(sat) 0 0.04 0.06 0.1 VCE(sat) 0.2 0.4 0.6 1.0 2.0 0 0.04 0.06 4.0 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 -1.0 θV, TEMPERATURE COEFFICIENTS (mV/ °C) θV, TEMPERATURE COEFFICIENTS (mV/ °C) Figure 5. “On” Voltages 25°C to 150°C -1.5 -2.0 qVB FOR VBE -2.5 0.04 0.06 0.1 -55°C to 25°C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 +2.5 +2.0 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 25°C to 150°C *qVC FOR VCE(sat) 0 -55°C to 25°C -0.5 -1.0 -1.5 25°C to 150°C qVB FOR VBE -2.5 0.04 0.06 4.0 -55°C to 25°C -2.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 6. Temperature Coefficients http://onsemi.com 4 2.0 4.0 MJD243 (NPN), MJD253 (PNP) VCC +30 V 1K RC 25 ms +11 V SCOPE RB t, TIME (ns) D1 51 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tr 100 0 -9.0 V 500 300 200 -4 V 50 30 20 td 10 5 3 2 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES 1 0.01 NPN MJD243 PNP MJD253 0.02 0.03 0.05 0.1 1 2 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 10K VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 TJ = 25°C 100 C, CAPACITANCE (pF) ts 1K 500 300 200 100 Cib 70 50 30 Cob 20 tf MJD243 (NPN) MJD253 (PNP) NPN MJD243 PNP MJD253 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) 3 5 10 1.0 10 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Turn−Off Time Figure 10. Capacitance 200 TJ = 25°C 100 C, CAPACITANCE (pF) t, TIME (ns) 5 200 5K 3K 2K 10 0.01 3 Figure 8. Turn−On Time Figure 7. Switching Time Test Circuit 50 30 20 VCC = 30 V IC/IB = 10 TJ = 25°C Cib 70 50 30 20 10 Cob 1 2 3 5 7 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance http://onsemi.com 5 50 70 100 50 70 100 MJD243 (NPN), MJD253 (PNP) ORDERING INFORMATION Package Type Package Shipping† MJD243G DPAK−3 (Pb−Free) 369C 75 Units / Rail MJD243T4G DPAK−3 (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD243T4G* DPAK−3 (Pb−Free) 369C 2,500 / Tape & Reel MJD253−1G IPAK (Pb−Free) 369D 75 Units / Rail MJD253T4G DPAK−3 (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD253T4G* DPAK−3 (Pb−Free) 369C 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable http://onsemi.com 6 MJD243 (NPN), MJD253 (PNP) PACKAGE DIMENSIONS DPAK−3 CASE 369C ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C A A E b3 c2 B 4 L3 Z D 1 2 H DETAIL A 3 L4 b2 e c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.086 0.094 2.18 2.38 A1 0.000 0.005 0.00 0.13 b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61 D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC H 0.370 0.410 9.40 10.41 L 0.055 0.070 1.40 1.78 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01 Z 0.155 −−− 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MJD243 (NPN), MJD253 (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. 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