Product Overview
MJD253: 4.0 A, 100 V PNP Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.
Features
• Collector-Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain
hFE = 40 (Min) @ IC= 200 mAdc
hFE= 15 (Min) @ IC = 1.0 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves ("-1" Suffix)
• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
• Low Collector-Emitter Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
• High Current-Gain-Bandwith Product fT = 40MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage ICBO = 100 nAdc @ Rated VCB
• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable
• These are PbFree Packages
For more features, see the data sheet
Part Electrical Specifications
Product
Compliance
Status
Polarity
Type
MJD253-1G
AEC
Qualified
Active
PNP
Active
Active
VCE(sat)
Max (V)
IC
Continuo
us (A)
V(BR)CEO
Min (V)
hFE Min
hFE Max
fT Min
(MHz)
PTM Max
(W)
Package
Type
General
Purpose
4
100
40
180
40
12.5
IPAK-4
PNP
General
Purpose
4
100
40
180
40
12.5
DPAK-3
PNP
General
Purpose
4
100
40
180
40
12.5
DPAK-3
Pb-free
Halide free
MJD253T4G
Pb-free
Halide free
NJVMJD253T4G
AEC
Qualified
PPAP
Capable
Pb-free
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016