MJD243 (NPN), MJD253 (PNP) Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − • • • • • • • • • VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = 1.0 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.6 Vdc (Max) @ IC = 1.0 Adc High Current−Gain − Bandwidth Product − fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage − ICBO = 100 nAdc @ Rated VCB Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V These are Pb−Free Packages http://onsemi.com 4.0 A, 100 V, 12.5 W POWER TRANSISTOR 4 4 1 2 Base 1 Collector 2 Emitter 3 DPAK−3 CASE 369D STYLE 1 3 DPAK−3 CASE 369C STYLE 1 MARKING DIAGRAMS AYWW J253G A Y WW x G AYWW J2x3G = Assembly Location = Year = Work Week = 4 or 5 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 12 1 Publication Order Number: MJD243/D MJD243 (NPN), MJD253 (PNP) MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol Value Unit VCB 100 Vdc VCEO 100 Vdc VEB 7.0 Vdc IC 4.0 8.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 0.1 W W/°C Total Device Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.4 0.011 W W/°C TJ, Tstg −65 to + 150 °C Symbol Value Unit RqJC RqJA 10 89.3 °C/W Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current −Continuous −Peak Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient (Note 2) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted on minimum pad sizes recommended. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 100 − − − 100 100 − 100 40 15 180 − − − 0.3 0.6 − 1.8 − 1.5 40 − − 50 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 10 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TJ = 125°C) ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO DC Current Gain (Note 3) (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE Collector−Emitter Saturation Voltage (Note 3) (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base−Emitter Saturation Voltage (Note 3) (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) Base−Emitter On Voltage (Note 3) (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) Vdc nAdc mAdc nAdc − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob 2. When surface mounted on minimum pad sizes recommended. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = ⎪hFE⎪• ftest. http://onsemi.com 2 MHz pF MJD243 (NPN), MJD253 (PNP) 10 IC, COLLECTOR CURRENT (AMPS) PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 1.5 15 TA (SURFACE MOUNT) 1 10 TC 0.5 500ms 5 100ms 1ms 2 1 5ms 0.5 0.2 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.1 0.05 5 0.02 0 0 0.01 25 50 75 100 125 150 dc 1 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) T, TEMPERATURE (°C) 100 Figure 2. Active Region Maximum Safe Operating Area Figure 1. Power Derating r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.02 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 Figure 3. Thermal Response http://onsemi.com 3 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 MJD243 (NPN), MJD253 (PNP) NPN MJD243 PNP MJD253 500 VCE = 1.0 V VCE = 2.0 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 200 200 TJ = 150°C 25°C 100 70 50 -55°C 30 20 10 7.0 5.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 25°C -55°C 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 4.0 VCE = 1.0 V VCE = 2.0 V TJ = 150°C 100 70 50 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 4. DC Current Gain 1.4 1.4 TJ = 25°C 1.2 1.2 1.0 1.0 0.8 0.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 0.4 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 1.0 V 0.6 IC/IB = 10 0.4 5.0 5.0 0.2 0.2 VCE(sat) 0 0.04 0.06 0.1 VCE(sat) 0.2 0.4 0.6 1.0 2.0 0 0.04 0.06 4.0 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 4.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) -1.0 θV, TEMPERATURE COEFFICIENTS (mV/ °C) θV, TEMPERATURE COEFFICIENTS (mV/ °C) Figure 5. “On” Voltages 25°C to 150°C -1.5 -2.0 qVB FOR VBE -2.5 0.04 0.06 0.1 -55°C to 25°C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 +2.5 +2.0 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 25°C to 150°C *qVC FOR VCE(sat) 0 -55°C to 25°C -0.5 -1.0 -1.5 25°C to 150°C qVB FOR VBE -2.5 0.04 0.06 4.0 -55°C to 25°C -2.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 6. Temperature Coefficients http://onsemi.com 4 MJD243 (NPN), MJD253 (PNP) VCC +30 V 1K RC 25 ms +11 V SCOPE RB t, TIME (ns) D1 51 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tr 100 0 -9.0 V 500 300 200 -4 V 50 30 20 td 10 5 3 2 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES 1 0.01 NPN MJD243 PNP MJD253 0.02 0.03 0.05 0.1 1 2 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 10K VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 TJ = 25°C 100 C, CAPACITANCE (pF) ts 1K 500 300 200 100 Cib 70 50 30 Cob 20 tf MJD243 (NPN) MJD253 (PNP) NPN MJD243 PNP MJD253 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) 3 5 10 1.0 10 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Turn−Off Time Figure 10. Capacitance 200 TJ = 25°C 100 C, CAPACITANCE (pF) t, TIME (ns) 5 200 5K 3K 2K 10 0.01 3 Figure 8. Turn−On Time Figure 7. Switching Time Test Circuit 50 30 20 VCC = 30 V IC/IB = 10 TJ = 25°C Cib 70 50 30 20 10 Cob 1 2 3 5 7 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance http://onsemi.com 5 50 70 100 50 70 100 MJD243 (NPN), MJD253 (PNP) ORDERING INFORMATION Package Type Package Shipping† MJD243G DPAK−3 (Pb−Free) 369C 75 Units / Rail MJD243T4G DPAK−3 (Pb−Free) 369C 2500 / Tape & Reel MJD253−1G DPAK−3 (Pb−Free) 369D 75 Units / Rail MJD253T4G DPAK−3 (Pb−Free) 369C 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MJD243 (NPN), MJD253 (PNP) PACKAGE DIMENSIONS DPAK−3 CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− MJD243 (NPN), MJD253 (PNP) PACKAGE DIMENSIONS DPAK−3 (SINGLE GAUGE) CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3 PL 0.13 (0.005) DIM A B C D E F G H J K R S V Z T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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