MJD6039 D

MJD6039, NJVMJD6039T4G
Darlington Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, convertors,
and power amplifiers.
Features
 Lead Formed for Surface Mount Applications in Plastic Sleeves







(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
 Human Body Model, 3B > 8000 V
 Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free Package is Available*
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SILICON
POWER TRANSISTORS
4 AMPERES,
80 VOLTS, 20 WATTS
DPAK
CASE 369C
STYLE 1
COLLECTOR 2, 4
BASE
1
MAXIMUM RATINGS
Rating
EMITTER 3
Symbol
Max
Unit
VCEO
80
Vdc
Collector−Base Voltage
VCB
80
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector−Emitter Voltage
Collector Current
Continuous
Peak
IC
Base Current
IB
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD
Total Power Dissipation (Note 1)
@ TA = 25C
Derate above 25C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
MARKING DIAGRAM
AYWW
J
6039G
Adc
4
8
100
mAdc
20
0.16
W
W/C
1.75
0.014
W
W/C
−65 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
A
= Assembly Location
Y
= Year
WW = Work Week
J6039 = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
DPAK
2,500/Tape & Reel
MJD6039T4G
DPAK
(Pb−Free)
2,500/Tape & Reel
NJVMJD6039T4G
DPAK
(Pb−Free)
2,500/Tape & Reel
Device
MJD6039T4
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 9
1
Publication Order Number:
MJD6039/D
MJD6039, NJVMJD6039T4G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25
C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
71.4
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
80
−
−
10
1000
500
−
−
−
2.5
−
2.8
25
−
−
100
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Collector−Cutoff Current
(VCE = 40 Vdc, IB = 0)
ICEO
Vdc
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 2 Adc, VCE = 4 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 2 Adc, VCE = 4 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
−
pF
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB  100 mA
MSD6100 USED BELOW IB  100 mA
VCC = 30 V
IC/IB = 250
t, TIME (s)

RB
51
25 ms
tr, tf  10 ns
DUTY CYCLE = 1%
D1
 8 k  120
IB1 = IB2
TJ = 25C
ts
2
RC SCOPE
TUT
V2
APPROX
+8 V
0
V1
APPROX
-12 V
4
VCC
-30 V
tf
1
0.8
tr
0.6
0.4
+4V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
0.2
0.04 0.06
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 1. Switching Times Test Circuit
PNP
NPN
0.1
td @ VBE(off) = 0
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times
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2
2
4
MJD6039, NJVMJD6039T4G
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
0.01
0.03
0.02
SINGLE
PULSE
0.01
0.01
0.02 0.03
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 6.25C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.05
0.1
0.2 0.3
0.5
1
2 3
5
10
t, TIME OR PULSE WIDTH (ms)
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
1000
500
TA TC
2.5 25
10
7
5
0.1ms
0.5ms
3
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Thermal Response
5ms
2
1ms
1
0.7
0.5
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIM­
IT
TJ = 150C
CURVES APPLY BELOW RATED VCEO
0.3
0.2
dc
0.1
1
2
3
5
7
10
20
30
50 70
100
2 20
TC
1.5 15
1 10
0.5
5
0
0
TA
SURFACE
MOUNT
25
50
75
100
T, TEMPERATURE (C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
125
150
Figure 5. Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 6 and 7 is based on TJ(pk) = 150C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
TC = 25C
C, CAPACITANCE (pF)
100
70
50
30
20
10
0.04 0.06 0.1
Cob
Cib
PNP
NPN
0.2
0.4 0.6
1
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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3
10
20
40
MJD6039, NJVMJD6039T4G
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
6k
4k
hFE , DC CURRENT GAIN
VCE = 3 V
TJ = 125C
3k
25C
2k
-55C
1k
800
600
400
300
0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
TJ = 125C
3
2.6
2.2
IC =
0.5 A
1A
2A
0.5
1
4A
1.8
1.4
1
0.6
0.1
0.2
2
5
10
20
IB, BASE CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
V, TEMPERATURE COEFFICIENTS (mV/C)
VBE(sat) @ IC/IB = 250
1.8
1.4
VBE @ VCE = 3 V
1
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
*APPLIED FOR IC/IB < hFE/3
0
25C to 150C
- 0.8
- 1.6
- 2.4
qVC for VCE(sat)
- 55C to 25C
- 3.2
-4
25C to 150C
qVC for VBE
- 4.8
0.04 0.06
0.1
25C to 150C
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (A)

REVERSE
2
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
105
FORWARD
104
VCE = 30 V
NPN
MJD6039
TJ = 150C
BASE
COLLECTOR
102
101
100
100
+ 0.8
TJ = 25C
103
50
IC, COLLECTOR CURRENT (AMP)
2.2
V, VOLTAGE (VOLTS)
3.4
8k
100C
25C
10-1
-0.6 -0.4 -0.2
0 +0.2 +0.4 +0.6 +0.8 +1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
+1.2 +1.4
 60
EMITTER
Figure 11. Collector Cut−Off Region
Figure 12. Darlington Schematic
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4
3
4
MJD6039, NJVMJD6039T4G
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MJD6039/D