Order this document by MJD6036/D SEMICONDUCTOR TECHNICAL DATA DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. • • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Available on 16 mm Tape and Reel for Automatic Handling (“T4” Suffix) Surface Mount Replacements for 2N6034– 2N6039 Series Monolithic Construction With Built–in Base–Emitter Shunt Resistors High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc Complementary Pairs Simplifies Designs ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS MAXIMUM RATINGS Unit VCEO 80 Vdc Collector–Base Voltage VCB 80 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current — Continuous Peak IC 4 8 Adc Base Current IB 100 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 Watts W/_C Total Power Dissipation (1) @ TA = 25_C Derate above 25_C PD 1.75 0.014 Watts W/_C TJ, Tstg – 65 to + 150 _C Collector–Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 6.25 _C/W Thermal Resistance, Junction to Ambient (1) RθJA 71.4 _C/W CASE 369A–13 CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.165 4.191 MJD6036 MJD6039 0.190 4.826 Symbol Rating Characteristic Symbol Min Max Unit VCEO(sus) 80 — Vdc ICEO — 10 µAdc 0.07 1.8 *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (1) These ratings are applicable when surface mounted on the minimum pad sizes recommended. * Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (continued) v v 0.063 1.6 Collector–Cutoff Current (VCE = 40 Vdc, IB = 0) 0.243 6.172 Collector–Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) 0.118 3.0 OFF CHARACTERISTICS inches mm Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 1000 500 — — Unit ON CHARACTERISTICS (1) hFE DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 2 Adc, VCE = 4 Vdc) — Collector–Emitter Saturation Voltage (IC = 2 Adc, IB = 8 mAdc) VCE(sat) — 2.5 Vdc Base–Emitter On Voltage (IC = 2 Adc, VCE = 4 Vdc) VBE(on) — 2.8 Vdc hfe 25 — — — — 200 100 DYNAMIC CHARACTERISTICS Small–Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 kHz) Cob Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 300 µs, Duty Cycle 2%. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS VCC D1, MUST BE FAST RECOVERY TYPE, e.g.: – 30 V 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA RC SCOPE TUT V2 RB APPROX +8 V ≈ 8 k ≈ 120 51 D1 0 V1 APPROX +4V –12 V 25 µs tr, tf ≤ 10 ns DUTY CYCLE = 1% 4 VCC = 30 V IB1 = IB2 IC/IB = 250 TJ = 25°C FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. Figure 1. Switching Times Test Circuit ts 2 t, TIME ( µs) (1) Pulse Test: Pulse Width pF MJD6036 MJD6039 tf 1 0.8 tr 0.6 0.4 0.2 0.04 0.06 PNP NPN 0.1 td @ VBE(off) = 0 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 Figure 2. Switching Times Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. 2 Motorola Bipolar Power Transistor Device Data 4 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.05 0.1 0.07 0.05 0.01 0.03 P(pk) RθJC(t) = r(t) RθJC RθJC = 6.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 50 100 200 300 1000 500 TA TC 2.5 25 10 7 5 0.1 ms 0.5 ms 3 PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Thermal Response 5 ms 2 1 ms 1 0.7 0.5 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.3 dc TJ = 150°C CURVES APPLY BELOW RATED VCEO 0.2 0.1 1 2 3 5 7 10 20 30 50 70 100 2 20 TC 1.5 15 1 10 0.5 5 0 0 TA SURFACE MOUNT 25 50 75 100 T, TEMPERATURE (°C) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 4. Maximum Rated Forward Biased Safe Operating Area 150 Figure 5. Power Derating 200 TC = 25°C C, CAPACITANCE (pF) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 6 and 7 is based on T J(pk) = 150 _C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. T J(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 125 100 70 50 30 20 10 0.04 0.06 0.1 Cob Cib PNP NPN 0.2 0.4 0.6 1 2 4 6 10 40 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3 TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD6036 NPN MJD6039 6k 6k 4k 3k 25°C 2k – 55°C 1k 800 600 400 300 0.04 0.06 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 3k 25°C 2k – 55°C 1k 800 600 400 300 0.04 0.06 4 VCE = 3 V TJ = 125°C 4k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 3 V TC = 125°C 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 3.4 TJ = 125°C 3 2.6 IC = 0.5 A 1A 2A 4A 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 1 2 5 20 10 50 100 3.4 TJ = 125°C 3 2.6 2.2 IC = 0.5 A 1A 2A 0.5 1 4A 1.8 1.4 1 0.6 0.1 0.2 2 5 20 10 50 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V 1.4 1 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 VBE(sat) @ IC/IB = 250 1.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 1.4 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1 2 4 0.2 0.04 0.06 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1 2 IC, COLLECTOR CURRENT (AMP) Figure 9. “On” Voltages 4 Motorola Bipolar Power Transistor Device Data 4 PNP MJD6036 NPN MJD6039 + 0.8 0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) + 0.8 *APPLIES FOR IC/IB < hFE/3 25°C to 150°C – 0.8 – 1.6 *θVC for VCE(sat) – 55°C to 25°C – 2.4 25°C to 150°C – 3.2 θVB for VBE –4 – 4.8 0.04 0.06 0.1 25°C to 150°C 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 3 4 *APPLIED FOR IC/IB < hFE/3 0 25°C to 150°C – 0.8 – 1.6 – 2.4 θVC for VCE(sat) – 55°C to 25°C – 3.2 –4 25°C to 150°C θVC for VBE – 4.8 0.04 0.06 0.1 25°C to 150°C 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 3 4 Figure 10. Temperature Coefficients 104 103 105 REVERSE REVERSE FORWARD IC, COLLECTOR CURRENT ( µ A) IC, COLLECTOR CURRENT ( µ A) 105 VCE = 30 V 102 101 100 TJ = 150°C 100°C 103 – 1.2 – 1.4 VCE = 30 V 102 TJ = 150°C 101 100 25°C 10–1 + 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1 VBE, BASE–EMITTER VOLTAGE (VOLTS) FORWARD 104 100°C 25°C 10–1 – 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1 VBE, BASE–EMITTER VOLTAGE (VOLTS) + 1.2 + 1.4 Figure 11. Collector Cut–Off Region COLLECTOR PNP MJD6036 BASE COLLECTOR NPN MJD3039 BASE ≈8k ≈ 60 EMITTER ≈8k ≈ 60 EMITTER Figure 12. Darlington Schematic Motorola Bipolar Power Transistor Device Data 5 PACKAGE DIMENSIONS C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE –T– E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D 2 PL G 0.13 (0.005) M T INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– BASE COLLECTOR EMITTER COLLECTOR CASE 369A–13 ISSUE W C B V E R 4 A 1 2 3 S –T– K SEATING PLANE J F H D G 3 PL 0.13 (0.005) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 STYLE 1: PIN 1. 2. 3. 4. T MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 BASE COLLECTOR EMITTER COLLECTOR CASE 369–07 ISSUE K How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *MJD6036/D* MJD6036/D