MMBT6427LT1 D

MMBT6427LT1G,
SMMBT6427LT1G
Darlington Transistor
NPN Silicon
http://onsemi.com
Features
 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−23 (TO−236)
CASE 318
STYLE 6
MAXIMUM RATINGS
Symbol
Value
Unit
Collector −Emitter Voltage
Rating
VCEO
40
Vdc
Collector −Base Voltage
VCBO
40
Vdc
Emitter −Base Voltage
VEBO
12
Vdc
IC
500
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/C
556
C/W
300
2.4
mW
mW/C
Collector Current − Continuous
COLLECTOR 3
BASE
1
EMITTER 2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25C
Derate above 25C
PD
Thermal Resistance, Junction−to−Ambient
RqJA
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25C
Derate above 25C
PD
Thermal Resistance, Junction−to−Ambient
RqJA
417
C/W
TJ, Tstg
−55 to +150
C
Junction and Storage Temperature
MARKING DIAGRAM
1V M G
G
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1V = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT6427LT1G
SOT−23 3,000 Tape & Reel
(Pb−Free)
SMMBT6427LT1G
SOT−23 3,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
1
Publication Order Number:
MMBT6427LT1/D
MMBT6427LT1G, SMMBT6427LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
−
40
−
12
−
−
1.0
−
50
−
50
10,000
20,000
14,000
100,000
200,000
140,000
−
−
1.2
1.5
−
2.0
−
1.75
−
7.0
−
15
1.3
−
−
10
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IC = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
mAdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
VCE(sat)(3)
Collector −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc)
Base −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VBE(sat)
Base −Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
|hfe|
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
NF
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
pF
pF
Vdc
dB
MMBT6427LT1G, SMMBT6427LT1G
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
500
2.0
BANDWIDTH = 1.0 Hz
RS  0
i n, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
200
BANDWIDTH = 1.0 Hz
100
10 mA
50
100 mA
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 mA
0.1
0.07
0.05
10 mA
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
50k 100k
50 100 200
50k 100k
Figure 3. Noise Current
14
200
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 2. Noise Voltage
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
IC = 10 mA
70
50
100 mA
30
20
1.0 mA
10
1.0
2.0
10
10 mA
8.0
100 mA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
500
1000
0
1.0
Figure 4. Total Wideband Noise Voltage
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
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3
500
1000
MMBT6427LT1G, SMMBT6427LT1G
SMALL−SIGNAL CHARACTERISTICS
20
|h fe |, SMALL-SIGNAL CURRENT GAIN
4.0
TJ = 25C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
VR, REVERSE VOLTAGE (VOLTS)
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200k
hFE, DC CURRENT GAIN
TJ = 125C
25C
30k
20k
10k
7.0k
5.0k
-55C
VCE = 5.0 V
3.0k
2.0k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
RV, TEMPERATURE COEFFICIENTS (mV/C)
TJ = 25C
1.4
V, VOLTAGE (VOLTS)
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
500
TJ = 25C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
100 200
500 1000
Figure 9. Collector Saturation Region
1.6
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
0.8
VCE(sat) @ IC/IB = 1000
0.6
10
2.0
3.0
Figure 8. DC Current Gain
5.0 7.0
1.0
Figure 7. High Frequency Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
100k
70k
50k
VCE = 5.0 V
f = 100 MHz
TJ = 25C
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
500
-1.0
-2.0
*APPLIES FOR IC/IB  hFE/3.0
25C TO 125C
*RqVC FOR VCE(sat)
-55C TO 25C
-3.0
25C TO 125C
-4.0
qVB FOR VBE
-5.0
-55C TO 25C
-6.0
5.0 7.0 10
Figure 10. “On” Voltages
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
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4
500
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MMBT6427LT1G, SMMBT6427LT1G
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
0.03
ZqJC(t) = r(t)  RqJCTJ(pk) - TC = P(pk) ZqJC(t)
ZqJA(t) = r(t)  RqJATJ(pk) - TA = P(pk) ZqJA(t)
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
Figure 12. Thermal Response
FIGURE A
tP
PP
PP
t1
1/f
t
DUTYCYCLE + t1f + 1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
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5
1.0k
2.0k
5.0k 10k
MMBT6427LT1G, SMMBT6427LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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For additional information, please contact your local
Sales Representative
MMBT6427LT1/D