MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 350 V Collector − Base Voltage VCBO 350 V Emitter − Base Voltage VEBO 5.0 V Base Current IB 25 mA Collector Current − Continuous IC 100 mA Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C 2 EMITTER 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SOT−23 (TO−236AB) CASE 318 STYLE 6 MARKING DIAGRAM 1Z M G G 1 1Z = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT6517LT1G SOT−23 (Pb−Free) 3000 Tape & Reel MMBT6517LT3G SOT−23 10,000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 6 1 Publication Order Number: MMBT6517LT1/D MMBT6517LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 350 − 350 − 6.0 − − 50 − 50 20 30 30 20 15 − − 200 200 − − − − − 0.30 0.35 0.50 1.0 − − − 0.75 0.85 0.90 − 2.0 40 200 − 6.0 − 80 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mA) V(BR)CEO Collector −Base Breakdown Voltage (IC = 100 mA) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 10 mA) V(BR)EBO Collector Cutoff Current (VCB = 250 V) ICBO Emitter Cutoff Current (VEB = 5.0 V) IEBO V V V nA nA ON CHARACTERISTICS DC Current Gain (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 30 mA, VCE = 10 V) (IC = 50 mA, VCE = 10 V) (IC = 100 mA, VCE = 10 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) (IC = 50 mA, IB = 5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) VBE(sat) Base −Emitter On Voltage (IC = 100 mA, VCE = 10 V) VBE(on) − V V V SMALL−SIGNAL CHARACTERISTICS Current Gain − Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 20 MHz) fT Collector−Base Capacitance (VCB = 20 V, f = 1.0 MHz) Ccb Emitter−Base Capacitance (VEB = 0.5 V, f = 1.0 MHz) Ceb 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 MHz pF pF f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) MMBT6517LT1G 200 TJ = 125°C hFE, DC CURRENT GAIN VCE = 10 V 100 25°C 70 50 -55°C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 100 70 50 20 10 1.0 Figure 1. DC Current Gain VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 50 70 100 2.5 IC + 10 IB 2.0 1.5 25°C to 125°C 1.0 0.5 0 RqVC for VCE(sat) -55°C to 25°C -1.0 -1.5 0.2 0 1.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) -0.5 0.4 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 -55°C to 125°C RqVB for VBE -2.0 -2.5 1.0 70 100 2.0 Figure 3. “On” Voltages 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) TJ = 25°C Ceb 30 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 0.5 50 Figure 4. Temperature Coefficients 100 70 50 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 1.0 RθV, TEMPERATURE COEFFICIENTS (mV/ °C) TJ = 25°C 0.8 2.0 Figure 2. Current−Gain — Bandwidth Product 1.4 1.2 TJ = 25°C VCE = 20 V f = 20 MHz 30 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance http://onsemi.com 3 50 100 200 70 100 MMBT6517LT1G 1.0k 700 500 10k 7.0k 5.0k VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C td @ VBE(off) = 2.0 V 300 3.0k 2.0k t, TIME (ns) 200 t, TIME (ns) ts tr 100 70 50 1.0k 700 500 30 300 20 200 100 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C tf 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 7. Turn−Off Time Figure 6. Turn−On Time +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 W SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH ≈ 100 ms tr, tf ≤ 5.0 ns DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 SINGLE PULSE 0.05 P(pk) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 0.03 0.02 t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 Figure 9. Thermal Response http://onsemi.com 4 200 500 1.0k 2.0k 5.0k 10k MMBT6517LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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