HS-2400RH Data Sheet Radiation Hardened PRAM Four Channel Programmable Operational Amplifier HS-2400RH is a four-channel programmable amplifier providing a level of versatility unsurpassed by any other monolithic operational amplifier. Versatility is achieved by employing four input amplifier channels, any one (or none) of which may be electronically selected and connected to a single output stage through DTL/TTL compatible address inputs. The device formed by the output and the selected pair of inputs is an op amp which delivers excellent slew rate, gain bandwidth and power bandwidth performance. Other advantageous features for these dielectrically isolated amplifiers include high voltage gain and input impedance coupled with low input offset voltage and offset current. External compensation is not required on this device at closed loop gains greater than 10. Each channel of the HS-2400RH can be controlled and operated with suitable feedback networks in any of the standard op amp configurations. This specialization makes these amplifiers excellent components for multiplexing signal selection and mathematical function designs. With 20V/µs slew rate, 20MHz gain bandwidth and low input bias currents make these devices ideal building blocks for signal generators, active filters and data acquisition designs. Programmability, coupled with 9mV maximum offset voltage and 50nA offset current, make these amplifiers outstanding components for signal conditioning circuits. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95684. A “hot-link” is provided on our homepage for downloading. http://www.intersil.com/spacedefense/space.htm September 1999 File Number 4027.1 Features • Electrically Screened to SMD # 5962-95684 • QML Qualified per MIL-PRF-38535 Requirements • Total GAMMA Dose . . . . . . . . . . . . . . . . . . . .10k RAD(SI) • Digital Programmability • High Rate Slew - Uncompensated . . . . . . . . . . . . . . . . . . . . . .20V/µs Min - Compensated . . . . . . . . . . . . . . . . . . . . . . . . .6V/µs Min • Wide Gain Bandwidth - Uncompensated . . . . . . . . . . . . . . . . . . . . . .20MHz Min - Compensated . . . . . . . . . . . . . . . . . . . . . . . . .4MHz Min • High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50kV/V Min • Low Offset Current . . . . . . . . . . . . . . . . . . . . . . .50nA Max • Single Capacitor Compensation for Unity Gain • DTL/TTL Compatible Inputs Applications • Signal Selection/Multiplexing • Operational Amplifier Gain Stage • Oscillator Frequency • Filter Characteristics • Add-Subtract Functions • Integrator Characteristics • Comparator Levels Pinout 16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE (CERDIP) MIL-STD-1835 GDIP-T16 TOP VIEW Ordering Information ORDERING NUMBER INTERNAL MKT. NUMBER TEMP. RANGE (oC) 5962D9568401VEA HS1-2400RH-Q -55 to 125 +IN3 1 -IN3 2 +IN4 3 -IN4 4 -IN1 5 +IN1 6 -IN2 7 +IN2 8 1 + 33 - 16 D0 DECODE CONTROL 15 D1 14 ENABLE + 4 - 13 GND 12 1 + 11 COMP V+ 10 OUT 2 + OUTPUT AMP 9 V- CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 321-724-7143 | Copyright © Intersil Corporation 1999 HS-2400RH Test Circuit V2 0.002 V1 47pF 1µF 1µF 9 S31 1 S51 100 0.002 11 2 2 10K 47pF 1 1 5 S61 2 2 1 + 6 13 V6 1 2 S41 10K 100 14 0.002 2 2 S32 10K 1 15 S52 100 0.002 V7 1 1 1 7 S62 2 2 +2 8 16 1 2 V8 V9 S42 10K 15pF 100 0.002 1 DUT 2 2 S33 10K 1 S53 100 0.002 12 1 1 2 S63 2 2 3 + 1 1 2 S43 10K 100 0.002 V3 1 ACOUT 2 2 S34 10K S54 100 0.002 -1 10 1 1 1 2 2 4 S64 2 4 + 3 1 2 50K S14 500K 10 1 S11 S9 S44 10K 100 OPEN 1 S7 VIN 1 1 V5 200 2 1 2K S8 2 2 1 2 1 50pF (NOTE 2) V4 (NOTE 1) -1 + A2 OPEN S4 10 + FB 2 X2 OPEN 2 1 S2 1 S1 2 OUT NOTES: OPEN 2 2 E 4.9K 1 S3 1. For loop stability, use Min value capacitor to prevent oscillation. 2. Includes stray capacitance. 3. All capacitors = ±10% (µF). OPEN 4. All resistors = ±1% (Ω). 5. DUT pin numbers refer to 14 pin CERDIP Package. HS-2400RH Test Waveforms +5.0V +5.0V +5.0V +5.0V ∆V INPUT ∆V OUTPUT -5.0V -5.0V -5.0V -5.0V +SR -SR ∆T SR = ∆T ∆T ∆T SLEW RATE WAVEFORMS VFINAL = +200mV +200mV 0V VPEAK 90% INPUT OUTPUT 0V 90% -200mV 10% 0V -200mV tR , +OS 0V 10% tF, -OS VPEAK tR tF OVERSHOOT, RISE AND FALL TIME WAVEFORMS Burn-In Circuit HS-2400RH CERDIP 1 2 3 4 5 6 7 8 16 + 33 - DECODE CONTROL 15 14 + 4 - 13 12 1 + 11 10 2 + OUTPUT AMP 9 D0 f0 D1 f1 ENABLE f2 GND COMP C3 D1 V+ V+ OUT V- VD2 R1 NOTES: 6. R1 = 100kΩ,/Socket, 5%, 1/4W (Min). 7. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min). 8. C3 = 0.001µF/Socket, 10%. 9. D1 = D2 = 1N4002 or equivalent (per board). 10. |(V+) - (V-)| = 30V. 11. Duty Cycle 50% for: f0 = 100kHz, f1 = 50kHz, f2 = 25kHz. 3 C1 C2 HS-2400RH Irradiation Circuit R 1 16 2 15 3 14 4 13 5 12 6 11 R R V1 C 7 10 8 9 GND V2 C GND GND NOTES: 14. R = 1 Meg Ω. 12. V1 = +15V. 15. C = 0.1µF. 13. V2 = -15V. Schematic Diagram IN+ Q1 R2 2.4K R3 1.8K R1 1.6K R12 1.6K IN- R13 0.8K R18 2.0K COMP +VCC Q82 Q81 Q79 R34 1.6K Q84 Q3 Q5 VE Q29 Q28 Q30 Q98 Q85 Q80 Q31 Q101 Q99 Q83 Q2 Q4 Q102 R4 22.9K Q26 Q27 ENABLE Q6 R5 8.0K Q7 Q8 Q9 R6 2.0K R35 1.6K Q32 Q34 R14 10K Q25 Q103 Q37 Q36 Q33 Q87 Q18 Q19 Q22 Q24 Q38 OUT R31 36.5 Q92 Q93 Q94 Q95 Q96 V+ Q11 Q88 Q89 Q40 Q13 R32 34 Q41 Q23 VD 1.2K Q100 Q97 C1 9.0pF Q39 Q12 Q86 R30 R35 0.75K Q20 Q21 R7 5.6K Q10 GND R33 4K Q35 Q90 VC Q91 Q14 TO ADDITIONAL INPUT STAGES Q17 VB Q15 R8 4K Q16 R9 1.5K VA R10 10K R11 10K R15 10K Q42 R16 10K R17 1.6K D0 R19 1.6K D1 NOTE: 16. Diagram Includes: One Input Stage, Decode Control, Bias Network, and Output Stage. 4 R29 0.4K -VEE HS-2400RH Die Characteristics DIE DIMENSIONS: Substrate: Potential (Powered Up) 88 mils x 67 mils x 19 mils ±1 mils 2240µm x 1710µm x 483µm ±25.4µm Unbiased ADDITIONAL INFORMATION: INTERFACE MATERIALS: Worst Case Current Density: Top Metallization: < 2 x 105A/cm2 Type: Al, 1% Cu Thickness: 16kÅ ±2kÅ Transistor Count: 251 Glassivation: Process: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.). Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ Bipolar Dielectric Isolation Metallization Mask Layout HS-2400RH -IN2 +IN1 -IN1 -IN4 +IN4 -IN3 +IN3 +IN2 V- D0 OUT V+ COMP GND ENABLE D1 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. 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