MUR2020R SWITCHMODE Ultrafast Power Rectifier Features and Benefits • • • • • • Reverse Polarity Rectifier Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature These are Pb−Free Devices* http://onsemi.com ULTRAFAST RECTIFIER 20 AMPERES, 200 VOLTS trr = 95 ns Applications 1 • Power Supply – Output Rectification • Power Management • Instrumentation 4 3 4 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94, V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C TO−220AC CASE 221B STYLE 2 1 3 MARKING DIAGRAM *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. AY WWG U2020R AK A Y WW G AK = Assembly Location = Year = Work Week = Pb−Free Package = Diode Polarity ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2013 July, 2013 − Rev. 5 1 Device Package Shipping MUR2020RG TO−220AC (Pb−Free) 50 Units / Rail Publication Order Number: MUR2020R/D MUR2020R MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 200 V Average Rectified Forward Voltage, (Rated VR), TC = 125°C IF(AV) 20 A Peak Repetitive Forward Current (Rated VR), TC = 125°C IFRM 40 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 250 A TJ, Tstg −65 to +175 °C Operating Junction Temperature and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit °C/W Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 2.0 Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 70 Min Typical Max − − 0.97 0.79 1.1 1.0 − − 0.1 0.225 50 1.0 − − − − 95 75 ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 1) (iF = 20 Amps, Tj = 25°C) (iF = 20 Amps, Tj = 150°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, Tj = 25°C) (Rated dc Voltage, Tj = 150°C) iR Maximum Reverse Recovery Time (IF = 1.0 Amps, di/dt = 50 A/ms) (IF = 1.0 Amps, di/dt = 100 A/ms) trr 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. http://onsemi.com 2 Unit V mA mA ns MUR2020R TYPICAL CHARACTERISTICS PF(AV), AVERAGE POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD 40 dc 30 TJ = 175°C 20 Square Wave 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 0 0 100 50 150 200 dc 10 5 0 0 5 10 15 20 Figure 1. Current Derating Figure 2. Power Dissipation 25 1000.00 IR, REVERSE CURRENT (mA) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) Square Wave 15 IF(AV), AVERAGE FORWARD CURRENT (AMPS) VF @ 175°C 1 0.5 0.7 0.9 1.1 Ir @ 175°C Ir @ 100°C 100.00 VF @ 25°C VF @ 100°C 1.3 Ir @ 25°C 10.00 1.00 1.5 0 50 100 150 VF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Maximum Forward Voltage Figure 4. Maximum Reverse Current 200 1000.000 100 IR, REVERSE CURRENT (mA) VF @ 175°C VF @ 25°C 1 VF @ 100°C 0.5 0.7 Ir @ 175°C 100.000 10 0.1 0.3 TJ = 175°C TC, CASE TEMPERATURE (°C) 100 0.1 0.3 20 0.9 1.1 1.3 1.000 Ir @ 25°C 0.100 0.010 0.001 1.5 Ir @ 100°C 10.00 0 50 100 150 VF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Forward Voltage Figure 6. Typical Reverse Current http://onsemi.com 3 200 MUR2020R TYPICAL CHARACTERISTICS 10000 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 TJ = 25°C 1000 100 0.1 1 10 1000 TJ = 25°C 100 0.1 100 1 VR, REVERSE VOLTAGE (VOLTS) 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Maximum Capacitance Rjc(t), TRANSIENT THERMAL RESISTANCE (°C/W) 10 Figure 8. Typical Capacitance 10 1 D = 0.5 0.1 0.1 0.05 ZqJC(t) = r(t) RqJC P(pk) 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) − TC = P(pk) ZqJC(t) t1 t2 0.01 DUTY CYCLE, D = t1/t2 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (s) Figure 9. Thermal Response http://onsemi.com 4 0.1 1 10 100 MUR2020R PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q F S T DIM A B C D F G H J K L Q R S T U 4 A 1 3 U H K L R D G J INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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