MUR620CTG Switch Mode Power Rectifier These state−of−the−art Switch Mode power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes. www.onsemi.com Features • • • • ULTRAFAST RECTIFIER 6.0 AMPERES, 200 VOLTS Ultrafast 35 Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO−220 Package These are Pb−Free Devices* 1 2, 4 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal 3 4 Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220AB CASE 221A MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Voltage (Rated VR, TC = 130°C) Per Diode Total Device IF(AV) Peak Repetitive Forward Current per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 130°C) IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 75 A TJ, Tstg −65 to +175 °C Operating Junction and Storage Temperature Range 1 2 3 MARKING DIAGRAM A 3.0 6.0 6.0 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AY WW U620G AKA A Y WW U620 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device MUR620CTG Package Shipping TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 5 1 Publication Order Number: MUR620CT/D MUR620CTG THERMAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Typical Maximum Unit RqJC 5.0−6.0 7.0 °C/W Symbol Typical Maximum Unit 0.80 0.94 0.895 0.975 2.0−10 0.01−3.0 250 5.0 20−30 35 Thermal Resistance, Junction−to−Case ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TC = 150°C) (iF = 3.0 A, TC = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TC = 150°C) (Rated DC Voltage, TC = 25°C) iR Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) trr V mA ns i F , INSTANTANEOUS FORWARD CURRENT (AMPS) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 TJ = 175°C 0.3 0.2 0.1 0.2 25°C 150°C 100°C 0.4 0.6 0.8 1.0 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1.2 Figure 1. Typical Forward Voltage I R, REVERSE CURRENT (A) μ 100 40 20 10 TJ = 175°C 4.0 2.0 1.0 150°C 0.4 0.2 0.1 100°C 0.04 0.02 0.01 0.004 0.002 0.001 25°C 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current www.onsemi.com 2 180 200 I F(AV), AVERAGE FORWARD CURRENT (AMPS) MUR620CTG 8.0 Rated VR Applied 7.0 6.0 DC 5.0 4.0 SQUARE WAVE 3.0 2.0 1.0 0 100 120 180 140 160 TC, CASE TEMPERATURE (°C) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Total Device Current Derating, Case 7.0 RqJA = 16°C/W with a typical TO-220 heat sink 6.0 dc 5.0 SQUARE WAVE 4.0 dc 3.0 2.0 SQUARE WAVE RqJA = 60°C/W (free air, no heat sink) 1.0 0 0 40 20 60 80 100 120 140 160 180 200 TA, AMBIENT TEMPERATURE (°C) PF(AV), AVERAGE POWER DISSIPATION (WATTS) Figure 4. Total Device Current Derating, Ambient 8.0 7.0 SQUARE WAVE DC 6.0 5.0 4.0 3.0 2.0 1.0 0 0 1 2 3 4 5 6 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Power Dissipation www.onsemi.com 3 7 8 MUR620CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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