BTB16 600CW3 D

BTB16-600CW3G,
BTB16-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
http://onsemi.com
Features
•
•
•
•
•
•
•
•
TRIACS
16 AMPERES RMS
600 thru 800 VOLTS
Blocking Voltage to 800 V
On-State Current Rating of 16 A RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt − 1000 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt − 8.5 A/ms minimum at 125°C
These are Pb−Free Devices
MT2
MT1
G
4
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB16−600CW3G
BTB16−800CW3G
VDRM,
VRRM
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
IT(RMS)
16
A
ITSM
170
A
I2t
144
A2sec
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 125°C, t = 20ms)
IGM
4.0
A
Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM
20
W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
Operating Junction Temperature Range
TJ
Storage Temperature Range
Tstg
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 10 ms)
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 10ms)
Value
Unit
V
600
800
1
2
BTB16−xCWG
AYWW
TO−220AB
CASE 221A
STYLE 4
3
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
W
3
Gate
−40 to +125
°C
4
−40 to +150
Main Terminal 2
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
Package
Shipping
BTB16−600CW3G
TO−220AB
(Pb−Free)
50 Units / Rail
BTB16−800CW3G
TO−220AB
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 2
1
Publication Order Number:
BTB16−600CW3/D
BTB16−600CW3G, BTB16−800CW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Symbol
Value
Unit
RqJC
RqJA
2.1
60
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
0.005
2.0
−
−
1.55
2.0
2.0
2.0
−
−
−
35
35
35
−
−
50
−
−
−
−
−
−
60
65
60
0.5
0.5
0.5
−
−
−
1.7
1.1
1.1
0.2
0.2
0.2
−
−
−
−
−
−
(dI/dt)c
8.5
−
−
A/ms
Critical Rate of Rise of On−State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
dI/dt
−
−
50
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dV/dt
1000
−
−
V/ms
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM/
IRRM
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ± 22.5 A Peak)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 33 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±500 mA)
IH
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
Gate Trigger Voltage (VD = 12 V, RL = 33 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
Gate Non−Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGD
V
mA
mA
mA
V
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
BTB16−600CW3G, BTB16−800CW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
VTM
on state
IRRM at VRRM
IH
Quadrant 3
MainTerminal 2 −
IH
off state
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
BTB16−600CW3G, BTB16−800CW3G
125
24
22
PAV, AVERAGE POWER (WATTS)
TC, CASE TEMPERATURE (°C)
120
30°
60°
90°
115
110
105
100
120°
95
180°
90
DC
85
80
75
70
0
2
4
6
8
10
12
IT(RMS), RMS ON‐STATE CURRENT (AMP)
14
120°
16
14
12
10
8
90°
6
60°
4
2
0
16
DC
180°
20
18
30°
0
100
MAXIMUM @ TJ = 125°C
10
16
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
1·104
Figure 4. Thermal Response
40
MAXIMUM @ TJ = 25°C
35
1
0.1
IH, HOLD CURRENT (mA)
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
TYPICAL AT
TJ = 25°C
4
6
8
10
12
14
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 2. On-State Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 1. Typical RMS Current Derating
2
0
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
30
MT2 POSITIVE
25
20
15
MT2 NEGATIVE
10
5
−40 −25 −10
4
5
20
35 50
65
80
95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On-State Characteristics
Figure 5. Typical Hold Current Variation
http://onsemi.com
4
BTB16−600CW3G, BTB16−800CW3G
1.6
VD = 12 V
RL = 30 W
Q3
Q1
Q2
10
1
VGT, GATE TRIGGER VOLTAGE (V)
IGT, GATE TRIGGER VOLTAGE (mA)
100
−40 −25 −10 5
20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
1
Q3
0.8
Q2
0.6
0.4
−40 −25 −10 5
20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
110 125
110 125
Figure 7. Typical Gate Trigger Voltage Variation
100
5000
4K
(dv/dt) c , CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/μ s)
VD = 800 Vpk
TJ = 125°C
3K
2K
1K
10
100
1000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
10000
75°C
ITM
tw
VDRM
f=
1
2 tw
(di/dt)c =
6f ITM
1000
20
30
40
50
60
70
80
90
100
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Critical Rate of Rise of
Commutating Voltage
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
100°C
TJ = 125°C
10
1
10
1N4007
MEASURE
I
TRIGGER
CHARGE
CONTROL
NON‐POLAR
CL
TRIGGER CONTROL
dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/ μ s)
Q1
1.2
Figure 6. Typical Gate Trigger Current Variation
0
VD = 12 V
RL = 30 W
1.4
+
200 V
MT2
1N914 51 W
MT1
G
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
http://onsemi.com
5
BTB16−600CW3G, BTB16−800CW3G
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE AA
−T−
B
F
4
Q
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BTB16−600CW3/D