MAC16HC D

MAC16HCDG, MAC16HCMG,
MAC16HCNG
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full−wave,
silicon gate−controlled devices are needed.
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TRIACS
16 AMPERES RMS
400 thru 800 VOLTS
Features
•
•
•
•
•
•
•
•
High Commutating di/dt and High Immunity to dv/dt @ 125°C
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
Blocking Voltage to 800 Volts
On−State Current Rating of 16 Amperes RMS at 80°C
High Surge Current Capability − 150 Amperes
Industry Standard TO−220 Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
These Devices are Pb−Free and are RoHS Compliant*
MT2
MT1
G
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC16HCD
MAC16HCM
MAC16HCN
VDRM,
VRRM
On−State RMS Current
(Full Cycle Sine Wave 50 to 60 Hz;
TC = 80°C)
IT(RMS)
16
A
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
ITSM
150
A
I2t
93
A2sec
PGM
20
W
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Circuit Fusing Consideration (t = 8.33 ms)
Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
Average Gate Power
(t = 8.3 ms, TC = 80°C)
Value
MAC16HCxG
AYWW
Unit
V
1
400
600
800
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2
TO−220
CASE 221A
STYLE 4
3
x
A
Y
WW
G
= D, M, or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC16HCDG
TO−220
(Pb−Free)
50 Units / Rail
MAC16HCMG
TO−220
(Pb−Free)
50 Units / Rail
MAC16HCNG
TO−220
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 2
1
Publication Order Number:
MAC16HC/D
MAC16HCDG, MAC16HCMG, MAC16HCNG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Value
Unit
RqJC
RqJA
2.2
62.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
IDRM,
IRRM
−
−
−
−
0.01
2.0
mA
Peak On−State Voltage (Note 2) (ITM = "21 A Peak)
VTM
−
−
1.6
V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
10
10
10
16
18
22
50
50
50
Holding Current (VD = 12 V, Gate Open, Initiating Current = "150 mA)
IH
−
20
50
Latch Current (VD = 12 V, IG = 50 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
−
−
−
33
36
33
60
80
60
0.5
0.5
0.5
0.80
0.73
0.82
1.5
1.5
1.5
(di/dt)c
15
−
−
A/ms
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
750
−
−
V/ms
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz
di/dt
−
−
10
A/ms
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
mA
mA
mA
VGT
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 6A, Commutating dv/dt = 20 V/ms, CL = 10 mF
Gate Open, TJ = 125°C, f = 250 Hz, with Snubber) LL = 40 mH
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
MAC16HCDG, MAC16HCMG, MAC16HCNG
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VTM
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 −
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
(−) MT2
Quadrant III
Quadrant 1
MainTerminal 2 +
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
+ Voltage
IDRM at VDRM
MAC16HCDG, MAC16HCMG, MAC16HCNG
1.10
VGT, GATE TRIGGER VOLTAGE (VOLT)
IGT, GATE TRIGGER CURRENT (mA)
100
Q3
Q2
Q1
10
1
-40 -25 -10
5
20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
110
Q3
1.00
Q1
0.90
0.80
Q2
0.70
0.60
0.50
0.40
-40 -25 -10
125
110
125
100
LATCHING CURRENT (mA)
HOLDING CURRENT (mA)
100
MT2 NEGATIVE
10
MT2 POSITIVE
1
-40 -25 -10
5
20
35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
110
Q2
Q1
Q3
10
1
-40 -25 -10
125
P(AV), AVERAGE POWER DISSIPATION (WATTS)
125
120
115
60°, 30°
110
90°
105
100
120°
95
90
180°
DC
85
80
0
2
4
6
8
10
12
IT(RMS), RMS ON‐STATE CURRENT (AMP)
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
110
125
Figure 4. Typical Latching Current
versus Junction Temperature
Figure 3. Typical Holding Current
versus Junction Temperature
TC, CASE TEMPERATURE (°C)
95
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
75
70
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
14
16
24
22
20
DC
180°
120°
18
16
14
12
10
90°
8
60°
6
4
2
0
30°
0
Figure 5. Typical RMS Current Derating
2
14
4
6
8
10
12
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 6. On-State Power Dissipation
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4
16
MAC16HCDG, MAC16HCMG, MAC16HCNG
1
TYPICAL @
TJ = 25°C
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
100
MAXIMUM @ TJ = 125°C
10
MAXIMUM @ TJ = 25°C
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
Figure 8. Typical Thermal Response
0.1
0
0.5
1
1.5
2
2.5
3
VT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
3.5
Figure 7. Typical On-State Characteristics
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5
10000
MAC16HCDG, MAC16HCMG, MAC16HCNG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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For additional information, please contact your local
Sales Representative
MAC16HC/D